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INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7408 FN4637
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| OCR Text |
...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converte... |
| Description |
Quadruple 2-Input Positive-NAND Gates 14-VQFN -40 to 85
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant,N-Channel Power MOSFETs
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| File Size |
54.83K /
8 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FRF9250H FRF9250R FRF9250D FN3247
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| OCR Text |
...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance ... |
| Description |
14 A, 200 V, 0.315 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs 0.315 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
From old datasheet system
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| File Size |
47.27K /
6 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
FRM9250H FRM9250R FRM9250D FN3267
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| OCR Text |
...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance ... |
| Description |
16A/ -200V/ 0.300 Ohm/ Rad Hard/ P-Channel Power MOSFETs
16A, -200V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs
From old datasheet system
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| File Size |
49.48K /
6 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSS230R FSS230D FN4054 FSS230R4 FSS230D1 FSS230D3 FSS230R1 FSS230R3
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| OCR Text |
...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converte... |
| Description |
RC NETWORK 220 OHM/100PF 5% SMD 8 A, 200 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
8A,200V,0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
8A/ 200V/ 0.440 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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| File Size |
45.76K /
8 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
FSS234R FSS234D FN4053 FSS234R4 FSS234D1 FSS234D3 FSS234R1 FSS234R3
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| OCR Text |
...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converte... |
| Description |
From old datasheet system
6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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| File Size |
44.72K /
8 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSS23A0R FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R1 FN4485 FSS23A0R4 FSS23A0R3
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| OCR Text |
...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converte... |
| Description |
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
From old datasheet system
9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
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| File Size |
56.22K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
FSS23A4R FSS23A4D FN4484 FSS23A4R4 FSS23A4D1 FSS23A4D3 FSS23A4R1 FSS23A4R3
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| OCR Text |
...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converte... |
| Description |
7A/ 250V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
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| File Size |
46.20K /
8 Page |
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it Online |
Download Datasheet |
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Intersil
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| Part No. |
FSYA9250R FSYA9250D FN4583
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| OCR Text |
...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converte... |
| Description |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
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| File Size |
55.57K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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