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2167 Datasheet PDF File

For 2167 Found Datasheets File :: 521 Search Time::1.219ms
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				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
Part No.	MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3
OCR Text	...5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout =...
Description	RF POWER FIELD EFFECT TRANSISTORS
File Size	553.35K / 12 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc Freescale Semiconductor...
Part No.	GRM55DR61H106KA88B MD7IC21100N12 ATC100B0R5CT500XT ATC100B100JT500XT ATC100B1R2CT500XT ATC100B5R1CT500XT GRM32EER72A105KA01L CRCW12064701FKEA CRCW12102R00FKEA GRM32NR72A104KA01B MD7IC21100NBR1 MD7IC21100GNR1
OCR Text	... ma, p out = 32 watts avg., f = 2167.5 mhz, iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. power gain ? 28.5 db power added efficiency ? 30% device output signal par ? 6. 1 db @ 0...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	1,067.52K / 22 Page	View it Online	Download Datasheet

				Molex Electronics Ltd.
Part No.	09-06-0048 09-06-0058 09-06-0068 09-07-0020 09-07-0030 09-06-0038 09-07-0039 09-07-0047 09-07-0048 09-06-0040 09-06-0050 09-06-0020 09-07-0037 09-07-0049 09-06-0049 09-06-0060 09-07-0038 09-07-0040 09-07-0050 09-10-5169 09-06-0027 09-06-0028 09-10-2117 09-06-0030 09-06-0032 09-06-0057 09-07-0027 09-07-0028 09-07-0029 09-07-0057 09-07-0058 09-07-0059 09-07-0060 09-06-0029 09-06-0037 09-06-0039 09-09-3169 09-06-0047 09-06-0059 09-06-0067 09-10-5109 09-10-5149 09-05-0117 09-10-2156 09-09-4101 26-32-9160 50-29-1556 50-29-1592 50-29-1591 11-21-5196 26-32-1027 26-32-0103 26-32-0163 26-32-1025 26-32-1035 26-32-1037 26-32-1047 26-32-1124 26-32-1049 26-32-1057 26-32-1059 26-32-1063 26-32-1067 26-32-1069 26-32-1077 26-32-1079 26-32-1084 26-32-1087 26-32-1089 26-32-1099 26-32-1102 26-32-1104 26-32-1129 26-32-1074 26-32-1097 26-32-1107 26-32-1109 26-32-1117 26-32-1119 26-32-1127 26-38-1048 26-32-6074 26-32-6064 26-32-6034 26-32-6044 26-32-6104 26-38-2168 26-38-5067 26-38-5068 26-32-2152 26-32-2154 26-31-2148 26-31-5028 26-31-5068 26-31-5158 26-31-2207 26-31-5038 26-31-5058 26-31-5088 26-31-2028 26-31-5048 26-31-5108 1121-5196 09-06-5100 09-06-5108 09-06-5107 09-06-0097 09-06-0099 09-06-1187 09
OCR Text	...028 09-06-2157 09-07-2038 09-07-2167 7675 09-06-2037 09-06-2158 09-07-2047 09-07-2168 7675 09-06-2038 09-06-2167 09-07-2048 09-07-2177 7675 09-06-2047 09-06-2168 09-07-2057 09-07-2178 7675 09-06-2048 09-06-2177 09-07-2058 09-07-2187...
Description	IDT CHANGE HEAD Specification Sheet
File Size	167.01K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BLF7G22L-160 BLF7G22LS-160
OCR Text	... mhz; f 3 = 2162.5 mhz; f 4 = 2167.5 mhz; rf performance at v ds = 28 v; i dq = 1300 ma; t case = 25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain...
Description	Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET Power LDMOS transistor BLF7G22L-160<SOT502A (SOT502A)\|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;BLF7G22L-160<SOT502A (SOT502A)\|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; Power LDMOS transistor BLF7G22LS-160<SOT502B (SOT502B)\|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF7G22LS-160<SOT502B (SOT502B)\|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;
File Size	1,107.65K / 18 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF6G22LS-130
OCR Text	...5 mhz; f 3 = 2157.5 mhz; f 4 = 2167.5 mhz; rf performance at v ds = 28 v; i dq = 1100 ma; t case = 25 c; unless otherwise speci?ed; in a class-ab production test circuit. symbol parameter conditions min typ max unit p l(av) average out...
Description	Power LDMOS transistor
File Size	72.47K / 11 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF7S21170HR3 MRF7S21170HR311 MRF7S21170HSR3
OCR Text	... ma, p out = 50 watts avg., f = 2167.5 mhz, iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. power gain ? 16 db drain efficiency ? 31% device output signal par ? 6. 1 db @ 0.01% pro...
Description	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
File Size	795.91K / 17 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF4G22-100 BLF4G22S-100
OCR Text	...22.5 MHz, f3 = 2157.5 MHz, f4 = 2167.5 MHz. Symbol Gp IRL D IMD3 ACPR Parameter power gain input return loss drain efficiency adjacent channel power ratio Conditions PL(AV) = 25 W PL(AV) = 25 W PL(AV) = 25 W PL(AV) = 25 W Min 12.5 9 24 Typ ...
Description	UHF power LDMOS transistor
File Size	75.71K / 14 Page	View it Online	Download Datasheet

				Advantech Co., Ltd. http://
Part No.	MIC-5301
OCR Text	...(PPS) Solution on a Renesas H8S/2167. Advantech offers a range of innovative ATCA customization services specifically targeted at Telecommunications Equipment Manufacturers (TEMs). Advantech's Design To Order Services (DTOS) team partners w...
Description	AdvancedTCA垄莽 Dual-Core Low Voltage Intel垄莽 Xeon垄莽 Processor Board with Two AMC Slots AdvancedTCA? Dual-Core Low Voltage Intel? Xeon? Processor Board with Two AMC Slots
File Size	146.76K / 2 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BLF6G21-10G
OCR Text	...17.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 100 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Gp D ACPR Parameter power gain drain efficiency adjacent channel...
Description	Power LDMOS transistor 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
File Size	75.29K / 11 Page	View it Online	Download Datasheet

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