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  4banks Datasheet PDF File

For 4banks Found Datasheets File :: 1057    Search Time::6.109ms    
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    HYNIX SEMICONDUCTOR INC
Part No. HY5W2A6CSF-HF HY5W2A6CSF-SF
OCR Text 4banks x 2m x 16bits synchronous dram this document is a general product descripti on and is subject to change without notice. hynix does not assume any responsibilit y for use of circuits described. no patent licenses are implied. rev. 1...
Description 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54

File Size 409.23K  /  24 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HY5DU12422ALT-D4 HY5DU12822ALT-D4
OCR Text ...8 32mx16 organization 32m x 4 x 4banks 16m x 8 x 4banks 8m x 16 x 4banks row address a0 - a12 a0 - a12 a0 - a12 column address a0-a9, a11, a12 a0-a9, a11 a0-a9 bank address ba0, ba1 ba0, ba1 ba0, ba1 auto precharge flag a10 a10 a10 refresh ...
Description 128M X 4 DDR DRAM, 0.7 ns, PDSO66
64M X 8 DDR DRAM, 0.7 ns, PDSO66

File Size 366.25K  /  33 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HY5DU56822ELF-J
OCR Text ...x8 16mx16 organization 8m x 8 x 4banks 4m x 16 x 4banks row address a0 - a12 a0 - a12 column address a0-a9 a0-a8 bank address ba0, ba1 ba0, ba1 auto precharge flag a10 a10 refresh 8k 8k 1 2 3 7 9 8 a b c d e f g h j k l m x8 device ball p...
Description 32M X 8 DDR DRAM, 0.7 ns, PBGA60

File Size 246.54K  /  29 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HY5DU56422CLF-J
OCR Text ...8 16mx16 organization 16m x 4 x 4banks 8m x 8 x 4banks 4m x 16 x 4banks row address a0 - a12 a0 - a12 a0 - a12 column address a0-a9, a11 a0-a9 a0-a8 bank address ba0, ba1 ba0, ba1 ba0, ba1 auto precharge flag a10 a10 a10 refresh 8k 8k 8k 1 ...
Description 64M X 4 DDR DRAM, 0.7 ns, PBGA60

File Size 298.57K  /  31 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HY57V641620FLTP-7
OCR Text ...641620f(l/s)tp is organized as 4banks of 1,048,576x16. hy57v641620f(l/s)tp is offering fully synchronous operation refe renced to a positive edge of the clock. all inputs and outputs are synchronized with the rising edge of the clock inp...
Description 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54

File Size 131.39K  /  13 Page

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    HY57V643220CT HY57V643220CT-47 HY57V643220CT-5 HY57V643220CT-55 HY57V643220CT-6 HY57V643220CT-7 HY57V643220CT-8 HY57V643

Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
Part No. HY57V643220CT HY57V643220CT-47 HY57V643220CT-5 HY57V643220CT-55 HY57V643220CT-6 HY57V643220CT-7 HY57V643220CT-8 HY57V643220CT-P HY57V643220CT-S HY57V643220CLT-7 HY57V643220CLT-8 HY57V643220CLT-P HY57V643220CLT-S HY57V643220CLT-47 HY57V643220CLT-5 HY57V643220CLT-55 HY57V643220CLT-6
OCR Text ...h. HY57V643220C is organized as 4banks of 524,288x32. HY57V643220C is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data...
Description 4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86

File Size 181.08K  /  12 Page

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    HY5756820CT HY5756820LT

Hynix Semiconductor
Part No. HY5756820CT HY5756820LT
OCR Text ...he hy57v5682 0c is organized as 4banks of 8,388,608x8. the hy57v56820c is offering fully synchronous operation referenc ed to a positive edge of the clock. all inputs and outputs are synchro- nized with the rising edge of the clock inpu...
Description 4 Banks x 8M x 8Bit Synchronous DRAM

File Size 104.08K  /  12 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HY5DU56422DF-H HY5DU56422DF-K
OCR Text ...8 16mx16 organization 16m x 4 x 4banks 8m x 8 x 4banks 4m x 16 x 4banks row address a0 - a12 a0 - a12 a0 - a12 column address a0-a9, a11 a0-a9 a0-a8 bank address ba0, ba1 ba0, ba1 ba0, ba1 auto precharge flag a10 a10 a10 refresh 8k 8k 8k ...
Description 64M X 4 DDR DRAM, 0.75 ns, PBGA60

File Size 268.38K  /  31 Page

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    HY57V28162 HY57V281620ELT HY57V281620ELT-5 HY57V281620ETP-5 HY57V281620ETP-6 HY57V281620ETP-H HY57V281620ELT-7 HY57V2816

HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Part No. HY57V28162 HY57V281620ELT HY57V281620ELT-5 HY57V281620ETP-5 HY57V281620ETP-6 HY57V281620ETP-H HY57V281620ELT-7 HY57V281620ELTP-7 HY57V281620ELTP-H HY57V281620ET HY57V281620ET-5 HY57V281620ET-7 HY57V281620ETP-7 HY57V281620ELT-6 HY57V281620ELT-H HY57V281620ELTP-5 HY57V281620ELTP-6 HY57V281620ET-6 HY57V281620ET-H
OCR Text ...E(L)T(P) series is organized as 4banks of 2,097,152 x 16. HY57V281620E(L)T(P) is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock inpu...
Description SDRAM - 128Mb
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54

File Size 119.76K  /  13 Page

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For 4banks Found Datasheets File :: 1057    Search Time::6.109ms    
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