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2167 Datasheet PDF File

For 2167 Found Datasheets File :: 521 Search Time::2.703ms
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				MOTOROLA
Part No.	MRF5S21150SR3
OCR Text	...5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout =...
Description	MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 Mhz, 33 W Avg., 2 X W-CDMA, 28 V Lateral N-channel RF Power MOSFETs
File Size	396.90K / 12 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
Part No.	MRF5P21180R6 MRF5P21180
OCR Text	...5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pou...
Description	N-Channel Enhancement-Mode Lateral MOSFET RF Power Field Effect Transistor
File Size	406.67K / 9 Page	View it Online	Download Datasheet

				Motorola
Part No.	MRF5P21180
OCR Text	...5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pou...
Description	2170 MHz, 180 W AVG., 2 x W?CDMA, 28 V Lateral N?Channel RF Power MOSFET From old datasheet system
File Size	410.25K / 8 Page	View it Online	Download Datasheet

				Motorola
Part No.	MRF5P21240
OCR Text	...5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Po...
Description	2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel Broadband RF Power MOSFET
File Size	585.82K / 8 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
Part No.	TM8705
OCR Text	...1752.50 1867.50 1992.50 2117.50 2167.50 2167.50 2167.50 2167.50 2167.50 2167.50 2167.50 2167.50 2167.50 2167.50 2167.50 2167.50 2117.50 1992.50 1867.50 1752.50 1637.50 1522.50 1407.50 1292.50 1177.50 1062.50 947.50 832.50 4 tenx techn...
Description	High-Performance 4-Bit Microcomputer with LCD/LED Driver.
File Size	104.44K / 11 Page	View it Online	Download Datasheet

				Motorola
Part No.	MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L
OCR Text	...5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 23 W Avg., IDQ = 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout =...
Description	2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
File Size	200.55K / 12 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. Motorola, Inc MOTOROLA[Motorola Inc]
Part No.	MRF21125S MRF21125 MRF21125SR3
OCR Text	...5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD...
Description	RF POWER FIELD EFFECT TRANSISTORS S BAND, Si, N-CHANNEL, RF POWER, MOSFET MRF21125, MRF21125S, MRF21125SR3 2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETs
File Size	378.36K / 12 Page	View it Online	Download Datasheet

				Freescale (Motorola) MOTOROLA[Motorola Inc] Motorola, Inc
Part No.	MRF21180R6 MRF21180
OCR Text	...5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pou...
Description	2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET RF Power Field Effect Transistor
File Size	516.52K / 12 Page	View it Online	Download Datasheet

				Freescale (Motorola) MOTOROLA[Motorola, Inc]
Part No.	MRF21085 MRF21085LSR3 MRF21085R3 MRF21085SR3
OCR Text	...5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout =...
Description	2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET RF Power Field Effect Transistors
File Size	558.64K / 12 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] Freescale (Motorola)
Part No.	MRF21045 MRF21045LR3 MRF21045LSR3 MRF21045R3 MRF21045SR3
OCR Text	...5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = ...
Description	RF Power Field Effect Transistors S BAND, Si, N-CHANNEL, RF POWER, MOSFET 2170 MHz, 45 W, 28 V Lateral N–Channel RF Power MOSFET
File Size	546.66K / 12 Page	View it Online	Download Datasheet

For 2167 Found Datasheets File :: 521 Search Time::2.703ms
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