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Motorola
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| Part No. |
MRF5S21150
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| OCR Text |
...5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 11 12.5 ? db drain efficiency (v dd = 28 vdc, p out = 33 w avg., i dq = 1300 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 23 25 ? % third order intermodulat... |
| Description |
MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
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| File Size |
397.08K /
12 Page |
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Motorola Mobility Holdings, Inc.
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| Part No. |
MRF5P21180 MRF5P21180R6
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| OCR Text |
... mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 12.5 14 ? db drain efficiency (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 800 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 23 25.5 ? % third order interm... |
| Description |
MRF5P21180 2170 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
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| File Size |
401.00K /
8 Page |
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it Online |
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Freescale (Motorola)
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| Part No. |
MRF5P21180R6
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| OCR Text |
... mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 12.5 14 ? db drain efficiency (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 800 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 23 25.5 ? % third order interm... |
| Description |
2170 MHz, 38 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
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| File Size |
538.64K /
8 Page |
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it Online |
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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
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| Part No. |
MRF5P21240R6 MRF5P21240
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| OCR Text |
...5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Po... |
| Description |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
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| File Size |
770.91K /
8 Page |
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it Online |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21090LSR3 MRF5S21090L MRF5S21090LR3
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| OCR Text |
...5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 19... |
| Description |
2170 MHz, 19 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
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| File Size |
578.61K /
12 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BLF6G22S-45112
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| OCR Text |
... mhz; f 3 = 2162.5 mhz; f 4 = 2167.5 mhz; rf performance at v ds = 28 v; i dq = 405 ma; t case = 25 c; unless otherwise speci?ed; in a class-ab production test circuit. symbol parameter conditions min typ max unit p l(av) average outp... |
| Description |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;
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| File Size |
59.48K /
10 Page |
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it Online |
Download Datasheet |
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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
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| Part No. |
MRF21045 MRF21045LR3 MRF21045LSR3 MRF21045R3 MRF21045SR3
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| OCR Text |
...5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = ... |
| Description |
RF Power Field Effect Transistors S BAND, Si, N-CHANNEL, RF POWER, MOSFET
2170 MHz, 45 W, 28 V Lateral N–Channel RF Power MOSFET
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| File Size |
546.66K /
12 Page |
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it Online |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L
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| OCR Text |
...5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 23 W Avg., IDQ = 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout =... |
| Description |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
561.39K /
12 Page |
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it Online |
Download Datasheet |
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