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Renesas
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| Part No. |
RJP30H1DPP-m0
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| OCR Text |
m0 silicon n channel igbt high speed power switching features ? trench gate and thin wafer technology (g6h-ii series) ? high speed switching: t r =80 ns typ., t f = 150 ns typ. ? low collector to emitter saturation voltage: v... |
| Description |
N-Channel Power MOSFET
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| File Size |
206.95K /
7 Page |
 View
it Online |
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Renesas
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| Part No. |
RJP30E3DPP-m0
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| OCR Text |
m0 silicon n channel igbt high speed power switching features ? trench gate technology (g5h series) ? low collector to emitter saturation voltage v ce(sat) = 1.6 v typ ? high speed switching tf = 150 ns typ ? low leak curr... |
| Description |
N-Channel Power MOSFET
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| File Size |
246.31K /
7 Page |
View
it Online |
Download Datasheet |
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Renesas
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| Part No. |
RJP30E3DPK-m0
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| OCR Text |
m0 silicon n channel igbt high speed power switching features ? trench gate technology (g5h series) ? low collector to emitter saturation voltage v ce(sat) = 1.6 v typ ? high speed switching tf = 150 ns typ ? low leak curr... |
| Description |
N-Channel Power MOSFET
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| File Size |
208.70K /
7 Page |
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it Online |
Download Datasheet |
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Renesas
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| Part No. |
RJP30E2DPP-m0
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| OCR Text |
m0 silicon n channel igbt high speed power switching features ? trench gate technology (g5h series) ? low collector to emitter saturation voltage v ce(sat) = 1.7 v typ ? high speed switching tf = 150 ns typ ? low leak curr... |
| Description |
N-Channel Power MOSFET
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| File Size |
207.93K /
7 Page |
View
it Online |
Download Datasheet |
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Renesas
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| Part No. |
RJP30E2DPK-m0
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| OCR Text |
m0 silicon n channel igbt high speed power switching features ? trench gate technology (g5h series) ? low collector to emitter saturation voltage v ce(sat) = 1.7 v typ ? high speed switching tf = 150 ns typ ? low leak curr... |
| Description |
N-Channel Power MOSFET
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| File Size |
214.26K /
7 Page |
View
it Online |
Download Datasheet |
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Renesas Electronics Corporation
Renesas Electronics, Corp.
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| Part No. |
RJK6053DPP-m0 RJK6053DPP-m0-T2
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| OCR Text |
M0
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1800-0100 Rev.1.00 Jul 02, 2009
Features
* Low on-resistance * Low leakage current * High speed switching
Outline
RENESAS Package code: PRSS0003AF-A) (Package name: TO-... |
| Description |
Silicon N Channel MOS FET High Speed Power Switching
11 A, 600 V, 0.82 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220FL, 3 PIN
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| File Size |
77.33K /
4 Page |
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it Online |
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Price and Availability
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