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4812S 74F413PC HRL1234W 9162B STN1NK80 35005 TP50N20P Q401E4
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    DYNEX[Dynex Semiconductor]
Part No. GP401LSS18
OCR Text ...1LSS18 800 700 Tj = 25C 600 foward current, IF - (A) 1000 900 800 Collector current, IC - (A) 700 600 500 400 300 200 Tcase = 125C Vge = 15V Rg(min) = 4.3 Rg(min) : Minimum recommended value 500 Tj = 125C 400 300 200 100 0 0 ...
Description Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information

File Size 91.04K  /  11 Page

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    2SD1273A 2SD1273

PANASONIC[Panasonic Semiconductor]
Part No. 2SD1273A 2SD1273
OCR Text ....2 s Features q q q High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 80 100 60 80 6 6 3 1 40...
Description Silicon NPN triple diffusion planar type

File Size 44.47K  /  2 Page

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    2SD1776 2SD1776A

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1776 2SD1776A
OCR Text ...er Dip 4.0 7.50.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 1:Base 2:Collector 3:Emitter TO-220 Fu...
Description Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

File Size 52.80K  /  3 Page

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    DYNEX[Dynex Semiconductor]
Dynex Semiconductor, Ltd.
Part No. GP401DDS18
OCR Text ...1DDS18 800 700 Tj = 25C 600 foward current, IF - (A) Collector current, IC - (A) 1000 900 800 700 600 500 400 300 200 Tcase = 125C Vge = 15V Rg(min) = 4.3 Rg(min) : Minimum recommended value 500 Tj = 125C 400 300 200 100 0 0 1...
Description    Low VCE(SAT) Dual Switch IGBT Module Preliminary Information
Low VCE(SAT) Dual Switch IGBT Module Preliminary Information 400 A, 1800 V, N-CHANNEL IGBT

File Size 159.60K  /  11 Page

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    1N5226B 1N5242B 1N5241B 1N5244B 1N5248B 1N5240B 1N5236B 1N5257B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B

Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. 1N5226B 1N5242B 1N5241B 1N5244B 1N5248B 1N5240B 1N5236B 1N5257B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5237B 1N5238B 1N5239B 1N5243B 1N5245B 1N5246B 1N5247B 1N5249B 1N5250B 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 1N5256B
OCR Text ....068 0.075 0.076 0.077 VF foward Voltage = 1.1 V Maximum @ IF = 200 mA for all 1N5200 series NOTE: National preferred devices in BOLD (c)1997 Fairchild Semiconductor Corporation 1N5200B Rev. A 1N5226B - 1N5257B Series S...
Description Absolute Maximum Ratings 15 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
Half Watt Zener(耗散功率.5瓦的齐纳二极 33 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
Absolute Maximum Ratings 7.5 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35

File Size 22.40K  /  3 Page

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    DYNEX[Dynex Semiconductor]
Part No. GP350MHB06S
OCR Text ...E = 300V Rg = 5 450 400 350 foward current, IF - (A) Switching times, - (ns) 300 250 Tj = 125C 200 Tj = 25C 800 600 400 200 tr 0 0 50 250 100 150 200 Collector current, IC - (A) 300 350 150 100 50 0 0 0.2 0.4 td(on) tf ...
Description Half Bridge IGBT Module

File Size 125.80K  /  10 Page

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    Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
Part No. GP2401ESM18 DYNEXSEMICONDUCTORLTD-GP2401ESM18
OCR Text ...M18 4800 4200 Tj = 25C 3600 foward current, IF - (A) 6000 5000 3000 Tj = 125C 2400 Collector current, IC - (A) 4000 3000 1800 1200 600 0 0 2000 Tcase = 125C 1000 Vge = 15V Rg(off) = 2.2 0 0 0.5 2.0 1.0 1.5 ...
Description Hi-Reliability Single Switch Low VCE(SAT) IGBT Module 2400 A, 1800 V, N-CHANNEL IGBT

File Size 152.37K  /  9 Page

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    2SD1272

PANASONIC[Panasonic Semiconductor]
Part No. 2SD1272
OCR Text ....2 s Features q q q High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 200 150 6 2.5 1 0.1 40 ...
Description Silicon NPN triple diffusion planar type(For high-speed switching and high current amplification ratio)

File Size 43.61K  /  2 Page

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    FR257 FR257P FR252 FR251 FR253 FR254 FR255 FR256

LRC[Leshan Radio Company]
Part No. FR257 FR257P FR252 FR251 FR253 FR254 FR255 FR256
OCR Text ...FIG. 4 - MAXINUM NON-REPETITIVE foward SURGE CURRENT FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 10 INSTANTANEOUS foward CURRENT (A) 105 PEAK FORWARD SURGE CURRENT,(A) 90 75 60 45 30 15 0 8.3ms Single Half Sine-Wav...
Description 2.5A FAST RECOVERY DIODES

File Size 47.96K  /  2 Page

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    DYNEX[Dynex Semiconductor]
Part No. GP2400ESM18
OCR Text ...M18 4800 4200 Tj = 25C 3600 foward current, IF - (A) 6000 5000 3000 Tj = 125C 2400 Collector current, IC - (A) 4000 3000 1800 1200 600 0 0 2000 Tcase = 125C 1000 Vge = 15V Rg(off) = 2.2 0 0 0.5 2.0 1.0 1.5 ...
Description Hi-Reliability Single Switch IGBT Module

File Size 155.57K  /  10 Page

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For foward Found Datasheets File :: 1161    Search Time::1.187ms    
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