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BUK6D81-80E 80 v, n-channel trench mosfet 4 april 2019 product data sheet 1. general description n-channel enhancement mode field-effect transistor (fet) in a medium power dfn2020md-6 (sot1220) surface-mounted device (smd) plastic package using trench mosfet technology. 2. features and benefits ? extended temperature range t j = 175 c ? side wettable flanks for optical solder inspection ? electrostatic discharge (esd) protection > 2 kv hbm (class h2) ? trench mosfet technology ? aec-q101 qualified 3. applications ? relay driver ? high-speed line driver ? low-side load switch ? switching circuits 4. quick reference data table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage - - 80 v v gs gate-source voltage t j = 25 c -20 - 20 v i d drain current v gs = 10 v; t sp = 25 c - - 9.8 a p tot total power dissipation t sp = 25 c - - 18.8 w static characteristics r dson drain-source on-state resistance v gs = 10 v; i d = 3.2 a; t j = 25 c - 62 81 m downloaded from: http:///
nexperia BUK6D81-80E 80 v, n-channel trench mosfet 5. pinning information table 2. pinning information pin symbol description simplified outline graphic symbol 1 d drain 2 d drain 3 g gate 4 s source 5 d drain 6 d drain 7 d drain 8 s source 65 7 8 4 transparent top view 12 3 dfn2020md?6 (sot1220) 017aaa255 g d s 6. ordering information table 3. ordering information package type number name description version BUK6D81-80E dfn2020md ? 6 plastic, leadless thermal enhanced ultra thin small outline package; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body sot1220 7. marking table 4. marking codes type number marking code BUK6D81-80E 4w BUK6D81-80E all information provided in this document is subject to legal disclaimers. ? nexperia b.v. 2019. all rights reserved product data sheet 4 april 2019 2 / 15 downloaded from: http:///
nexperia BUK6D81-80E 80 v, n-channel trench mosfet 8. limiting values table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 80 v v gs gate-source voltage t j = 25 c -20 20 v v gs = 10 v; t sp = 25 c - 9.8 a v gs = 10 v; t sp = 100 c - 6.9 a i d drain current v gs = 10 v; t amb = 25 c [1] - 3.2 a i dm peak drain current t sp = 25 c; single pulse; t p 10 s - 39 a t sp = 25 c - 18.8 w p tot total power dissipation t amb = 25 c [1] - 2 w t j junction temperature -55 175 c t amb ambient temperature -55 175 c t stg storage temperature -65 175 c source-drain diode t sp = 25 c - 6.9 a i s source current t amb = 25 c [1] - 2 a i sm peak source current single pulse; t p 10 s; t sp = 25 c - 28 a esd maximum rating v esd electrostatic discharge voltage hbm [2] - 2000 v avalanche ruggedness e ds(al)s non-repetitive drain- source avalanche energy t j(init) = 25 c; i d = 0.46 a; dut in avalanche (unclamped) - 19.3 mj [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and mountin g pad for drain 6 cm 2 . [2] measured between all pins. t j (c) -75 225 125 25 aaa-026120 40 80 120 p der (%) 0 fig. 1. normalized total power dissipation as a function of junction temperature t j (c) -75 225 125 25 aaa-026121 40 80 120 i der (%) 0 fig. 2. normalized continuous drain current as a function of junction temperature BUK6D81-80E all information provided in this document is subject to legal disclaimers. ? nexperia b.v. 2019. all rights reserved product data sheet 4 april 2019 3 / 15 downloaded from: http:///
nexperia BUK6D81-80E 80 v, n-channel trench mosfet aaa-029521 1 10 -1 10 10 2 i d (a) 10 -2 v ds (v) 10 -1 10 3 10 2 1 10 limit r dson = v ds /i d dc; t sp = 25 c dc; t amb = 25 c; 6 cm 2 100 s t p = 10 s 1 ms 10 ms 100 ms fig. 3. safe operating area; junction to ambient; continuous and peak drain currents as a fu nction of drain- source voltage BUK6D81-80E all information provided in this document is subject to legal disclaimers. ? nexperia b.v. 2019. all rights reserved product data sheet 4 april 2019 4 / 15 downloaded from: http:///
nexperia BUK6D81-80E 80 v, n-channel trench mosfet 9. thermal characteristics table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] - 66 76 k/w r th(j-sp) thermal resistance from junction to solder point - 4 8 k/w [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and mounting pad for drain 6 cm 2 . aaa-029522 t p (s) 10 -5 10 -2 10 -3 10 -4 1 10 -1 10 z th(j-sp) (k/w) 10 -2 0 0.25 0.05 0.02 0.01 duty cycle = 1 0.75 0.33 0.20 0.50 0.10 fig. 4. transient thermal impedance from junction to solder point as a function of pu lse duration; typical values 017aaa543 t p (s) 10 -3 10 2 10 3 10 1 10 -2 10 -1 10 2 10 10 3 z th(j-a) (k/w) 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 fr4 pcb, mounting pad for drain 6 cm 2 fig. 5. transient thermal impedance from junction to ambient as a function of pulse durati on; typical values BUK6D81-80E all information provided in this document is subject to legal disclaimers. ? nexperia b.v. 2019. all rights reserved product data sheet 4 april 2019 5 / 15 downloaded from: http:///
nexperia BUK6D81-80E 80 v, n-channel trench mosfet 10. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d = 250 a; v gs = 0 v; t j = 25 c 80 - - v v gsth gate-source threshold voltage i d = 250 a; v ds = v gs ; t j = 25 c 1.3 1.7 2.7 v v ds = 80 v; v gs = 0 v; t j = 25 c - - 1 a i dss drain leakage current v ds = 80 v; v gs = 0 v; t j = 125 c - - 20 a v gs = 20 v; v ds = 0 v; t j = 25 c - - 10 a v gs = -20 v; v ds = 0 v; t j = 25 c - - -10 a v gs = 10 v; v ds = 0 v; t j = 25 c - - 1 a i gss gate leakage current v gs = -10 v; v ds = 0 v; t j = 25 c - - -1 a v gs = 10 v; i d = 3.2 a; t j = 25 c - 62 81 m v gs = 10 v; i d = 3.2 a; t j = 175 c - 151 197 m r dson drain-source on-state resistance v gs = 4.5 v; i d = 2.9 a; t j = 25 c - 70 97 m g fs forward transconductance v ds = 10 v; i d = 3.2 a; t j = 25 c - 13.3 - s r g gate resistance f = 1 mhz - 4.7 - dynamic characteristics q g(tot) total gate charge - 9.9 14.9 nc q gs gate-source charge - 1.2 - nc q gd gate-drain charge v ds = 40 v; i d = 3.2 a; v gs = 10 v; t j = 25 c - 1.8 - nc c iss input capacitance - 504 - pf c oss output capacitance - 43 - pf c rss reverse transfer capacitance v ds = 40 v; f = 1 mhz; v gs = 0 v; t j = 25 c - 26 - pf t d(on) turn-on delay time - 5 - ns t r rise time - 4 - ns t d(off) turn-off delay time - 15 - ns t f fall time v ds = 40 v; i d = 3.2 a; v gs = 10 v; r g(ext) = 6 ; t j = 25 c - 7 - ns source-drain diode v sd source-drain voltage i s = 2 a; v gs = 0 v; t j = 25 c - 0.8 1.2 v t rr reverse recovery time - 12.4 - ns q r recovered charge i s = 1.9 a; di s /dt = -100 a/s; v gs = 0 v; v ds = 40 v; t j = 25 c - 5.4 - nc BUK6D81-80E all information provided in this document is subject to legal disclaimers. ? nexperia b.v. 2019. all rights reserved product data sheet 4 april 2019 6 / 15 downloaded from: http:///
nexperia BUK6D81-80E 80 v, n-channel trench mosfet v ds (v) 0 5 4 2 3 1 aaa-029812 4 8 12 i d (a) 0 v gs = 10 v 4.5 v 3.0 v 2.8 v 3.2 v 2.5 v t j = 25 c fig. 6. output characteristics: drain current as a function of drain-source voltage; typical values aaa-008544 v gs (v) 0 3 2 1 10 -4 10 -5 10 -3 i d (a) 10 -6 min typ max t j = 25 c; v ds = 5 v fig. 7. sub-threshold drain current as a function of gate-source voltage aaa-029466 i d (a) 0 15 10 5 120 60 180 240 r dson 0 v gs = 10 v 3.5 v 3.0 v 2.8 v 2.5 v 4.5 v t j = 25 c fig. 8. drain-source on-state resistance as a function of drain current; typical values v gs (v) 0 10 8 4 6 2 aaa-029464 120 180 60 240 300 r dson 0 t j = 175 c t j = 25 c i d = 4 a fig. 9. drain-source on-state resistance as a function of gate-source voltage; typical values BUK6D81-80E all information provided in this document is subject to legal disclaimers. ? nexperia b.v. 2019. all rights reserved product data sheet 4 april 2019 7 / 15 downloaded from: http:///
nexperia BUK6D81-80E 80 v, n-channel trench mosfet v gs (v) 0 2 3 4 1 aaa-029465 5 10 15 i d (a) 0 t j = 175 c t j = 25 c v ds > i d x r dson fig. 10. transfer characteristics: drain current as a function of gate-source voltage; typical values t j (c) -60 60 120 180 0 aaa-029520 3 a 0 1 2 fig. 11. normalized drain-source on-state resistance as a function of junction temperature; typical values t j (c) -60 180 120 0 60 aaa-029467 21 3 4 v gs(th) (v) 0 min typ max i d = 250 a; v ds = v gs fig. 12. gate-source threshold voltage as a function of junction temperature aaa-008550 v ds (v) 10 -1 10 2 10 1 10 2 10 3 c (pf) 10 c iss c oss c rss f = 1 mhz; v gs = 0 v fig. 13. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK6D81-80E all information provided in this document is subject to legal disclaimers. ? nexperia b.v. 2019. all rights reserved product data sheet 4 april 2019 8 / 15 downloaded from: http:///
nexperia BUK6D81-80E 80 v, n-channel trench mosfet q g (nc) 0 10 8 4 6 2 aaa-008551 4 62 8 10 v gs (v) 0 i d = 2.8 a; v ds = 40 v; t amb = 25 c fig. 14. gate-source voltage as a function of gate charge; typical values 003aaa508 v gs v gs(th) q gs1 q gs2 q gd v ds q g(tot) i d q gs v gs(pl) fig. 15. gate charge waveform definitions aaa-029468 v sd (v) 0 1.2 0.8 0.4 21 3 4 i s (a) 0 t j = 175 c t j = 25 c v gs = 0 v fig. 16. source current as a function of source-drain voltage; typical values BUK6D81-80E all information provided in this document is subject to legal disclaimers. ? nexperia b.v. 2019. all rights reserved product data sheet 4 april 2019 9 / 15 downloaded from: http:///
nexperia BUK6D81-80E 80 v, n-channel trench mosfet 11. test information t 1 t 2 p t 006aaa812 duty cycle = t 1 t 2 fig. 17. duty cycle definition quality information this product has been qualified in accordance with the automotive electronics council (aec) standard q101 - stress test qualification for discrete semiconductors , and is suitable for use in automotive applications. BUK6D81-80E all information provided in this document is subject to legal disclaimers. ? nexperia b.v. 2019. all rights reserved product data sheet 4 april 2019 10 / 15 downloaded from: http:///
nexperia BUK6D81-80E 80 v, n-channel trench mosfet 12. package outline references outline version european projection issue date iec jedec jeita sot1220 sot1220_po 18-05-3018-06-07 unit mm min nom max 1.9 1.0 0.65 a dimensions (mm are the original dimensions) note 1. dimension a is including plating thickness. dfn2020md-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm sot1220 a 1 bp 0.25 d d 1 e 1 e 2 e 0.27 0.64 j 1 l p v 0.05 y 0.1 y 1 0.51 1.1 0.2 0.1 t 0.16 0.61 1.3 0.3 0.10 0.22 0.65 0.04 2.1 1.2 0.35 scale j 0 2 mm 0.2 0.3 d 2 e 1.9 2.1 (8) x detail x a t (6) e 1 e 2 d 2 j j 1 l p a 1 e e d 1 1 2 3 6 5 4 pin 1 index area solderable lead end protrusion max. 0.02 mm (6) pin 1 index area b a e d bp (6) c y c y 1 a b v fig. 18. package outline dfn2020md?6 (sot1220) BUK6D81-80E all information provided in this document is subject to legal disclaimers. ? nexperia b.v. 2019. all rights reserved product data sheet 4 april 2019 11 / 15 downloaded from: http:///
nexperia BUK6D81-80E 80 v, n-channel trench mosfet 13. soldering 1.35 1.25 1.05 0.9 1.1 1.2 2.5 0.935 0.935 sot1220 footprint information for reflow soldering of dfn2020md-6 package sot1220_fr occupied area solder land solder resist solder land plus solder paste solder paste deposit dimensions in mm 0.33 (6) 0.76 0.66 0.56 0.25 0.35 0.45 0.25 (6) 0.35 (6) 0.65 0.65 0.45 (6) 0.43 (6) 0.53 (6) 2.06 0.775 0.285 fig. 19. reflow soldering footprint for dfn2020md?6 (sot1220) BUK6D81-80E all information provided in this document is subject to legal disclaimers. ? nexperia b.v. 2019. all rights reserved product data sheet 4 april 2019 12 / 15 downloaded from: http:///
nexperia BUK6D81-80E 80 v, n-channel trench mosfet 14. revision history table 8. revision history data sheet id release date data sheet status change notice supersedes BUK6D81-80E v.1 20190404 product data sheet - - BUK6D81-80E all information provided in this document is subject to legal disclaimers. ? nexperia b.v. 2019. all rights reserved product data sheet 4 april 2019 13 / 15 downloaded from: http:///
nexperia BUK6D81-80E 80 v, n-channel trench mosfet 15. legal information data sheet status document status [1][2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest product status information is available on the internet at https://www.nexperia.com . definitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local 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in no event shall nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nexperias aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nexperia. right to make changes nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use in automotive applications this nexperia product has been qualified for use in automotive applications. unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nexperia and its suppliers accept no liability for inclusion and/or use of nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. applications applications that are described herein for any of these products are for illustrative purposes only. nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nexperia products, and nexperia accepts no liability for any assistance with applications or customer product design. it is customers sole responsibility to determine whether the nexperia product is suitable and fit for the customers applications and products planned, as well as for the planned application and use of customers third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customers applications or products, or the application or use by customers third party customer(s). customer is responsible for doing all necessary testing for the customers applications and products using nexperia products in order to avoid a default of the applications and the products or of the application or use by customers third party customer(s). nexperia does not accept any liability in this respect. limiting values stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nexperia hereby expressly objects to applying the customers general terms and conditions with regard to the purchase of nexperia products by customer. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. translations a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the 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BUK6D81-80E all information provided in this document is subject to legal disclaimers. ? nexperia b.v. 2019. all rights reserved product data sheet 4 april 2019 14 / 15 downloaded from: http:///
nexperia BUK6D81-80E 80 v, n-channel trench mosfet contents 1. general description...................................... ................ 1 2. features and benefits...................................... ............ 1 3. applications........................................ .......................... 1 4. quick reference data........................................ ............1 5. pinning information.................................. ....................2 6. ordering information.................................... ................2 7. marking............................................. ............................. 2 8. limiting values...................................... ....................... 3 9. thermal characteristics........................................ ....... 5 10. characteristics............................................ ................ 6 11. test information....................................... ................. 10 12. package outline....................................... ................. 11 13. soldering......................................... .......................... 12 14. revision history....................................... .................13 15. legal information...................................... ................14 ? nexperia b.v. 2019. all rights reserved for more information, please visit: http://www.nexperia.com for sales office addresses, please send an email to: salesaddresses@nexperia.com date of release: 4 april 2019 BUK6D81-80E all information provided in this document is subject to legal disclaimers. ? nexperia b.v. 2019. all rights reserved product data sheet 4 april 2019 15 / 15 downloaded from: http:///

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