2016-04-06 1 2016-04-06 silicon pin photodiode with daylight blocking filte r version 1.5 bpw 34 f ordering information features: ? especially suitable for the wavelength range of 780 nm to 1100 nm ? short switching time (typ. 20 ns) ? dil plastic package with high packing density applications ? ir remote control of hi-fi and tv sets, dimmers, re mote controls of various equipment ? photointerrupters type: photocurrent ordering code i p [a] = 950 nm, e e = 1 mw/cm 2 , v r = 5 v bpw 34 f 50 ( 40) q62702p0929
2016-04-06 2 version 1.5 bpw 34 f maximum ratings (t a = 25 c) characteristics (t a = 25 c) parameter symbol values unit operating and storage temperature range t op ; t stg -40 ... 100 c reverse voltage v r 16 v reverse voltage (t < 2 min) v r 32 v total power dissipation p tot 150 mw esd withstand voltage (acc. to ansi/ esda/ jedec js-001 - hbm) v esd 2000 v parameter symbol values unit photocurrent (typ (min)) i p 50 ( 40) a wavelength of max. sensitivity (typ) s max 950 nm spectral range of sensitivity (typ) 10% (typ) 780 ... 1100 nm radiant sensitive area (typ) a 7.02 mm 2 dimensions of radiant sensitive area (typ) l x w 2.65 x 2.65 mm x mm half angle (typ) ? 60 dark current (v r = 10 v) (typ (max)) i r 2 ( 30) na spectral sensitivity of the chip ( = 950 nm) (typ) s typ 0.7 a / w quantum yield of the chip ( = 950 nm) (typ) 0.91 electro ns /photon open-circuit voltage (e e = 0.5 mw/cm 2 , = 950 nm) (typ (min)) v o 330 ( 275) mv short-circuit current (e e = 0.5 mw/cm 2 , = 950 nm) (typ) i sc 25 a rise and fall time (v r = 5 v, r l = 50 ?, = 850 nm, i p = 800 a) (typ) t r , t f 0.02 s forward voltage ( i f = 100 ma, e = 0) (typ) v f 1.3 v capacitance ( v r = 0 v, f = 1 mhz, e = 0) (typ) c 0 72 pf temperature coefficient of v o (typ) tc v -2.6 mv / k
version 1.5 bpw 34 f 2016-04-06 3 temperature coefficient of i sc ( = 950 nm) (typ) tc i 0.18 % / k noise equivalent power (v r = 10 v, = 950 nm) (typ) nep 0.036 pw / hz ? detection limit (v r = 10 v, = 950 nm) (typ) d * 7.3e12 cm x hz ? / w relative spectral sensitivity 1) page 7 s rel = f() photocurrent / open-circuit voltage 1) page 7 i p (v r = 5 v) / v o = f(e e ) parameter symbol values unit ohf00368 0 rel s 700 20 40 60 80 % 100 nm 800 900 1000 1200 e ohf01097 e 0 10 p 10 1 10 2 10 4 10 -1 10 0 10 1 10 2 4 10 3 10 2 10 1 1010 0 v o a mv p v o 3 10 w/cm 2
2016-04-06 4 version 1.5 bpw 34 f power consumption p tot = f(t a ) dark current 1) page 7 i r = f(v r ), e = 0 capacitance 1) page 7 c = f(v r ), f = 1 mhz, e = 0 dark current 1) page 7 i r = f(t a ), v r = 10 v, e = 0 t ohf00394 a 0 tot p 0 20 40 60 80 ?c 100 mw 20 40 60 80 100 120 140 160 0 ohf00080 r r v 0 5 10 15 v 20 1000 2000 3000 4000 pa v ohf00081 r -2 10 c 0 -1 10 0 10 1 10 2 10 v 10 20 30 40 50 60 70 80 pf 100 ohf05717 a t 10 -1 ?c 0 20 40 60 80 100 r i na 10 0 10 1 10 2 10 3 10 4
version 1.5 bpw 34 f 2016-04-06 5 directional characteristics 1) page 7 s rel = f(?) package outline dimensions in mm. package dil, epoxy ohf01402 90 80 70 60 50 40 30 20 10 20 40 60 80 100 120 0.4 0.6 0.8 1.0 ? 0.2 0.4 0.6 0.8 1.0 100 0 0 0
2016-04-06 6 version 1.5 bpw 34 f approximate weight: 78 mg ttw soldering iec-61760-1 ttw disclaimer language english will prevail in case of any discre pancies or deviations between the two language word ings. attention please! the information describes the type of component and shall not be considered as assured characteristics . terms of delivery and rights to change design reser ved. due to technical requirements components may c ontain dangerous substances. for information on the types in question please con tact our sales organization. if printed or downloaded, please find the latest ve rsion in the internet. packing please use the recycling operators known to you. we can also help you C get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport . for packing material that is returned to us unsorted or which w e are not obliged to accept, we shall have to invoi ce you for any costs incurred. components used in life-support devices or systems must be expressly authorized for such purpose! critical components* may only be used in life-suppo rt devices** or systems with the express written ap proval of osram os. *) a critical component is a component used in a li fe-support device or system whose failure can reaso nably be expected to cause the failure of that life-support device or system, or to affect its safety or the ef fectiveness of that device or system. **) life support devices or systems are intended (a ) to be implanted in the human body, or (b) to supp ort and/or maintain and sustain human life. if they fail, it i s reasonable to assume that the health and the life of the user may be endangered. 0 0 s oha04645 50 100 150 200 250 300 t t ?c 235 ?c - 260 ?c first wave 20 40 60 80 100 120 140 160 180 200 220 240 second wave 10 s max., max. contact time 5 s per wave preheating t ? 100 ?c 120 ?c 130 ?c typical cooling ca. 3.5 k/s typicalca. 2 k/s ca. 5 k/s continuous line: typical processdotted line: process limits < 150 k
version 1.5 bpw 34 f 2016-04-06 7 glossary 1) typical values: due to the special conditions of the manufacturing processes of led, the typical data or calculated correlations of technical parameters can only reflect statistical figures. these do not nec essarily correspond to the actual parameters of each single product, which could differ from the typical data a nd calculated correlations or the typical characteristic line. if requested, e.g. because of technical improvements, these typ. data will be changed without any further notice.
2016-04-06 8 version 1.5 bpw 34 f published by osram opto semiconductors gmbh leibnizstra?e 4, d-93055 regensburg www.osram-os.com ? all rights reserved.
|
