aoks40b65h1/AOTS40B65H1 650v, 40a alpha igbt tm general description product summary v ce i c (t c =100c) 40a v ce(sat) (t j =25c) 1.9v applications ? power factor correction ? ups & solar inverters ? very high switching frequency applications ? welding machines ? latest alphaigbt ( igbt) technology ? 650v breakdown voltage ? high efficient turn-on di/dt controllability ? very high switching speed ? low turn-off switching loss and softness ? very good emi behavior ? short-circuit ruggedness 650v g c to-247 c e to-220 symbol v ce v ge i cm i lm t sc t j , t stg t l symbol r ja r jc 1) allowed number of short circuits: <1000; time be tween short circuits: >1s. minimum order quantity package type form continuous collector current t c =25c 80 40 30 i c to247 tube 240 AOTS40B65H1 to220 tube turn off soa, v ce 650v, limited by t jmax pulsed collector current, limited by t jmax gate-emitter voltage t c =100c maximum junction-to-ambient thermal characteristics c/w 40 aoks40b65h1/AOTS40B65H1 units short circuit withstanding time 1) v ge = 15v, v cc 300v, t j 175c junction and storage temperature range t c =25c 150 c w t c =100c maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds c power dissipation p d maximum igbt junction-to-case v units parameter absolute maximum ratings t a =25c unless otherwise noted aoks40b65h1/AOTS40B65H1 collector-emitter voltage 650 orderable part number aoks40b65h1 parameter 5 s 120 va a c/w 0.5 300 -55 to 175 300 120 a 1000 g e g c e aoks40b65h1 g c AOTS40B65H1 rev.1.0: april 2015 www.aosmd.com page 1 of 7 downloaded from: http:///
symbol min typ max units bv ces collector-emitter breakdown voltage 650 - - v t j =25c - 1.9 2.4 t j =125c - 2.36 - t j =175c - 2.63 - v ge(th) gate-emitter threshold voltage - 4.9 - v t j =25c - - 10 t j =125c - - 500 t j =175c - - 10000 i ges gate-emitter leakage current - - 100 na g fs - 30 - s c ies - 1789 - pf c oes - 129 - pf c res - 64 - pf q g - 63 - nc q ge - 18 - nc q gc - 25 - nc i c(sc) - 256 - a r g - 14 - t d(on) - 41 - ns t r - 36 - ns t d(off) - 130 - ns t f - 14 - ns e on - 1.27 - mj e off - 0.46 - mj e total - 1.73 - mj t d(on) - 38 - ns t r - 44 - ns t d(off) - 155 - ns t f - 18 - ns e on - 1.35 - mj e off - 0.8 - mj e total - 2.15 - mj this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-on delaytime t j =175c v ge =15v, v cc =400v, i c =40a, r g =7.5 eon and etotal include diode(aok40b65h1) reverse recovery turn-on rise timeturn-off delay time turn-off fall time turn-on energy turn-off energy total switching energy turn-off energy turn-on rise time turn-on delaytime switching parameters, (load inductive, t j =175c) turn-off delay time t j =25c v ge =15v, v cc =400v, i c =40a, r g =7.5 eon and etotal include diode(aok40b65h1) reverse recovery total switching energy turn-off fall timeturn-on energy gate to collector charge gate to emitter charge v ge =15v, v cc =520v, i c =40a switching parameters, (load inductive, t j =25c) short circuit collector current v ge =15v, v cc =300v, t sc 5us, t j 175c total gate charge gate resistance v ge =0v, v cc =0v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions reverse transfer capacitance v ge =0v, v cc =25v, f=1mhz v ce =20v, i c =40a v ce =0v, v ge =30v forward transconductance v ce(sat) i c =1ma, v ge =0v, t j =25c v ge =15v, i c =40a v v ce =650v, v ge =0v collector-emitter saturation voltageoutput capacitance input capacitance i ces zero gate voltage collector current dynamic parameters a v ce =5v, i c =1ma rev.1.0: april 2015 www.aosmd.com page 2 of 7 downloaded from: http:///
typical electrical and thermal characteristics 0 30 60 90 120 150 0 1 2 3 4 5 6 7 i c (a) v ce (v) figure 1: output characteristic (t j =25c ) 9 v 20v 17v 15v 11v v ge = 7v 13v 0 20 40 60 80 100 3 6 9 12 15 i c (a) 175 c 25 c -40 c 0 1.5 3 4.5 6 7.5 0 25 50 75 100 125 150 175 v ce(sat) (v) i c =80a i c =20a i c =40a v ce =20v 0 30 60 90 120 150 0 1 2 3 4 5 6 7 i c (a) v ce (v) figure 2: output characteristic (t j =175c ) v ge =7v 9 v 20v 17v 15v 11v 13v 3 6 9 12 15 v ge (v) figure 3: transfer characteristic temperature (c) figure 4: collector-emitter saturation voltage vs. junction temperature 1 2 3 4 5 6 7 0 25 50 75 100 125 150 175 v ge(th) (v) t j (c) figure 5: v ge(th) vs. t j rev.1.0: april 2015 www.aosmd.com page 3 of 7 downloaded from: http:///
typical electrical and thermal characteristics 0 50 100 150 200 250 300 350 25 50 75 100 125 150 175 power disspation (w) t case (c) figure 9: power disspation as a function of case 1 10 100 1000 10000 0 8 16 24 32 40 capacitance (pf) v ce (v) figure 7: capacitance characteristic c ies c res c oes 0 3 6 9 12 15 0 15 30 45 60 75 v ge (v) q g (nc) figure 6: gate-charge characteristics v ce =520v i c =40a 0 20 40 60 80 100 25 50 75 100 125 150 175 current rating i c (a) t case (c) figure 10: current de-rating 1 10 100 1000 10000 25 50 75 100 125 150 175 switching time (ns) t j (c) figure 11: switching time vs.t j (v ge =15v,v ce =400v,i c =40a,r g =7.5 ) td(off) tf td(on) tr rev.1.0: april 2015 www.aosmd.com page 4 of 7 downloaded from: http:///
typical electrical and thermal characteristics 1 10 100 1000 10000 20 30 40 50 60 70 80 switching time (ns) i c (a) figure 12: switching time vs. i c (t j =175c,v ge =15v,v ce =400v,r g =7.5 ) td(off) tf td(on) tr 1 10 100 1000 10000 0 20 40 60 80 switching time (ns) r g ( ) figure 13: switching time vs. r g (t j =175c,v ge =15v,v ce =400v,i c =40a) td(off) tf td(on) tr 0 2 4 6 8 10 20 30 40 50 60 70 80 switching energy (mj) i c (a) figure 14: switching loss vs. i c (t j =175c,v ge =15v,v ce =400v,r g =7.5 ) eoff eon etotal 0 1 2 3 4 5 0 20 40 60 80 switching energy (mj) r g ( ) figure 15: switching loss vs. r g (t j =175c,v ge =15v,v ce =400v,i c =40a) eoff eon etotal 0 0.5 1 1.5 2 2.5 3 25 50 75 100 125 150 175 switching energy (mj) t j (c) figure 16: switching loss vs. t j (v ge =15v,v ce =400v,i c =40a,r g =7.5 ) eoff eon etotal 0 0.5 1 1.5 2 2.5 3 200 250 300 350 400 450 500 switching energ y (mj) v ce (v) figure 17: switching loss vs. v ce (t j =175c,v ge =15v,i c =40a,r g =7.5 ) eoff eon etotal rev.1.0: april 2015 www.aosmd.com page 5 of 7 downloaded from: http:///
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z jc normalized transient thermal resistance pulse width (s) figure 18: normalized maximum transient thermal imp edance for igbt d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =0.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p dm rev.1.0: april 2015 www.aosmd.com page 6 of 7 downloaded from: http:///
figure a: gate charge test circuit & waveforms figure b: inductive switching test circuit & waveforms rev.1.0: april 2015 www.aosmd.com page 7 of 7 downloaded from: http:///
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