, ij nc. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 designer's data sheet powe r fiel d effec t transisto r n-channe l enhancement-mod e silico n gat e thes e tmo s powe r fet s ar e designe d fo r mediu m voltage , hig h spee d powe r switchin g application s suc h a s switchin g regu - lators , converters , solenoi d an d rela y drivers . ? silico n gat e fo r fas t switchin g speed s switchin g time s specifie d a t kxt c ? designer' s dat a iqss - v ds(on) < v gs(th ) an d so a specifie d a t elevate d temperatur e ? rugge d so a i s powe r dissipatio n limite d ? source-to-drai n diod e characterize d fo r us e wit h inductiv e load s mtm8n2 0 mtp8n2 0 tmo s powe r fet s b ampere s 20 0 volt s maximu m rating s therma l characteristic s ratin g drain-sourc e voltag e drain-gat e voltag e (rq s - 1 mo ) gate-sourc e voltag e continuou s non-repbtitiv e it p ? 5 0 /*s ) drai n curren t continuou s pulse d tota l powe r dissipatio n @ t c = 25 c derat e abov e 2s c operatin g an d storag e temperatur e rang e symbo l vds s vdg r vg s vgs m i i d 'd m p d t j . t st g valu e 20 0 20 0 2 0 4 0 8 2 5 7 5 0. 6 -6 5 t o 15 0 uni t vd c vd c vd c vp k ad c wan s wpc " c therma l resistanc e junctio n t o cas e junctio n t o ambien t to-20 4 to-22 0 maximu m lea d temperatur e fo r solderin g to-22 0 purposes , 1/8 " from cas e fo r s second s to-20 4 rflj c r sj a t l 1.6 7 3 0 62. 5 26 0 30 0 t/ w ? c mtp8n2 0 to-220a b n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
electrica l characteristic s (t c = 25? c unles s otherwis e noted ) characteristi c symbo l wi n ma x uni t of f characteristic s drain-sourc e breakdow n voltag e ivo s = rate d v dss , vq s = 0 , t j = 12pc ) gate-bod y leakag e current , forwar d (vqs f = 2 0 vdc , vd s ~ ) gate-bod y leakag e current , revers e (vqs r = 2 0 vdc , vd s ? 0 ) v(br)ds s >ds s igss f igss r 20 0 -- 1 0 10 0 10 0 10 0 vd c >tad c nad c nad c o n characteristics * gat e threshol d voltag e (vd s = vgs . i d = 1 m a > t j = 100 c stati c drain-sourc e on-resistanc e (vq s - 1 0 vdc , i d = 4 adc ) drain-sourc e on-voltag e (vq s " 1 0 v ) (i d = 8 adc ) (i d = 4 adc . t j = 100c ) forwar d transconductanc e (vrj s = 1 5 v , i d = 4 a ) v gs(th ) "ds(on ) vds(on ) 9f s 2 1. 5 3 4. 5 4 0. 4 4 3. 6 vd c oh m vd c mho s dynami c characteristic s inpu t capacitanc e outpu t capacitanc e revers e transfe r capacitanc e (vd s ~ 2 5 v vg s ~ f = 1 mhz ) se e figur e 1 1 cis s cos b crs s - - 80 0 30 0 10 0 p f switchin g characteristics * (t j ? ? 100c i turn-o n dela y tim e ris e tim e turn-of f dela y tim e fal l tim e tota l gat e charg e gate-sourc e charg e gate-dra m charg e (vd d = 2 5 v , i d = 0- 5 rate d i d se e figure s 9 , 1 3 an d 1 4 (vd s = - 8 rste d v dss . i d = rate d id , vg s = 1 0 v > td(on ) v tdloff ) t f o g qg s qg d - - 1 5 (typ ) 8(typ ) 7 (typ ) 4 0 15 0 20 0 10 0 3 0 - n s n c sourc e drai n diod e characteristics * forwar d on-voltag e forwar d turn-o n tim e revers e recover y tim e (i g _ rate d i d vg s = 0 1 vs d 4 'o n ?r r 1 (typ ) 2. 5 vd c limite d b y stra y inductanc e 32 5 (typ ) - n s interna l packag e inductanc e (to-204 ) interna l dra m inductanc e (measure d from th e contac t scre w o n th e heade r close r t o th e sourc e pi n an d th e cente r o f th e die ) interna l sourc e inductanc e (measure d fro m th e sourc e pin , 0.25 " from th e packag e t o th e sourc e bon d pad ) l d l 5 5 ityp ) 12. 5 (typ) n h interna l packag e inductanc e (to-220 ) interna l drai n inductanc e (measure d from th e contac t scre w o n ta b t o cente r o f die ) (measure d from th e drai n lea d 0.25 " fro m packag e t o cente r o f die ) interna l sourc e inductanc e (measure d from th e sourc e lea d 0.25 ' fro m packag e t o source bon d pad. ) l d l s 3. 5 (typ ) 4. 5 (typ ) 7. 5 (typ ) n h ?puls e tes t puls e widt h s 30 0 ms . dul y cycl e downloaded from: http:///
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