050-7085 rev c 7-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. APT12057JFLL 1200v 19a 0.570 ?? ?? ? g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com sot-227 g s s d isotop ? "ul recognized" power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg popular sot-227 package fast recovery body diode power mos 7 r fredfet characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, 9.5a) zero gate voltage drain current (v ds = 1200v, v gs = 0v) zero gate voltage drain current (v ds = 960v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 1200 0.570 250 1000 100 35 APT12057JFLL 1200 1976 3040 520 4.17 -55 to 150 300 1950 3000 downloaded from: http:///
050-7085 rev c 7-2004 dynamic characteristics APT12057JFLL source-drain diode ratings and characteristics thermal characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -19a) peak diode recovery dv / dt 5 reverse recovery time(i s = -19a, di / dt = 100a/s) reverse recovery charge(i s = -19a, di / dt = 100a/s) peak recovery current(i s = -19a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 1976 1.3 18 t j = 25c 320 t j = 125c 650 t j = 25c 2.0 t j = 125c 7.0 t j = 25c 13 t j = 125c 22 symbol r jc r ja min typ max 0.24 40 unitc/w characteristicjunction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 16.62mh, r g = 25 ? , peak i l = 19a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - 19a di / dt 700a/s v r 1200 t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 600v i d = 19a @ 25c resistive switching v gs = 15v v dd = 600v i d = 19a @ 25c r g = 0.6 ? inductive switching @ 25c v dd = 800v, v gs = 15v i d = 19a, r g = 5 ? inductive switching @ 125c v dd = 800v v gs = 15v i d = 19a, r g = 5 ? min typ max 5155 770130 185 24 120 1118 36 24 725365 1200 450 unit pf nc ns j note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.250.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 downloaded from: http:///
050-7085 rev c 7-2004 APT12057JFLL typical performance curves r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 0 2 4 6 8 10 0 5 10152025303540 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 8070 60 50 40 30 20 10 0 2016 12 84 0 2.52.0 1.5 1.0 0.5 0.0 5045 40 35 30 25 20 15 10 50 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =10v v gs =20v 5.5v 6v 6.5v 7v 5v v gs =15,10 & 8v v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 0.05280.0651 0.123 0.0203f0.173f 0.490f power (watts) junctiontemp. ( c) rc model case temperature. ( c) normalized to v gs = 10v @ i d = 9.5a i d = 9.5a v gs = 10v downloaded from: http:///
050-7085 rev c 7-2004 APT12057JFLL v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage 20,00010,000 5,0001,000 500100 200 100 10 1 v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 1200 0 10 20 30 40 50 0 50 100 150 200 250 300 0.3 0.5 0.7 0.9 1.1 1.3 1.5 7610 51 1612 84 0 c rss c iss c oss t j =+150c t j =+25c v ds =250v v ds =100v v ds =400v i d = 19a t c =+25c t j =+150c single pulse operation here limited by r ds (on) 10ms 1ms 100s i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 800v r g = 5 ? t j = 125c l = 100h e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 10 20 30 40 50 10 20 30 40 50 10 20 30 40 50 0 5 10 15 20 25 30 35 40 45 50 v dd = 800v i d = 19a t j = 125c l = 100h e on includes diode reverse recovery. t d(on) t d(off) e on e off 160140 120 100 8060 40 20 0 35003000 2500 2000 1500 1000 500 0 v dd = 800v r g = 5 ? t j = 125c l = 100h v dd = 800v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery. 7060 50 40 30 20 10 0 35003000 2500 2000 1500 1000 500 0 downloaded from: http:///
050-7085 rev c 7-2004 APT12057JFLL typical performance curves drain current drain voltage gate voltage switching energy 10% t d(on) 90% 5% t r 5% 10% figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions i d d.u.t. v ds figure 20, inductive switching test circuit v dd g apt30df120 switching energy drain current drain voltage gate voltage 10% 0 t d(off) t f 90% 90% apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. isotop ? is a registered trademark of sgs thomson. sot-227 (isotop ? ) package outline 31.5 (1.240)31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m4 (4 places) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) * source drain gate * r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) * source source terminals are shortedinternally. current handling capability is equal for either source terminal. t j 125c t j 125c downloaded from: http:///
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