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savantic semiconductor product specification silicon pnp power transistors 2SA1389 d escription with mt-200 package fast switching speed excellent safe operating area applications high frequency power amplifiers audio power amplifiers switching regulators dc-dc converters pinning(see fig.2) pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -160 v v ceo collector-emitter voltage open base -160 v v ebo emitter-base voltage open collector -7 v i c collector current -12 a p c collector power dissipation t c =25 120 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (mt-200) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1389 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma ;i b =0 -160 v v (br)ebo emitter-base breakdown voltage i e =-50a; i c =0 -7 v v cesat collector-emitter saturation voltage i c =-5a;i b =-0.5a -1.8 v v be base-emitter voltage i c =-5a;v ce =-5v -1.7 v i cbo collector cut- off current v cb =-160v; i e =0 -50 a i ceo collector cut-off current v ce =-160v; i b =0 -1 ma i ebo emitter cut-off current v eb =-7v; i c =0 -50 a h fe-1 dc current gain i c =-1a ; v ce =-5v 60 200 h fe-2 dc current gain i c =-7a ; v ce =-5v 40 f t transition frequency i c =-1a ; v ce =-10v 30 mhz downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1389 package outline fig.2 outline dimensions downloaded from: http:///

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