s1a-m3, s1b-m3, s1d-m3, s1g- m3, s1j-m3, s1k-m3, S1M-M3 www.vishay.com vishay general semiconductor revision: 19-feb-16 1 document number: 89272 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount glass passivated rectifier typical applications for use in general purpose rect ification of power supplies, inverters, converters and freewheeling diodes for consumer, ? automotive and telecommunication. features ? low profile package ? ideal for automated placement ? glass passivated pellet chip junction ? low forward voltage drop ? low leakage current ? high forward surge capability ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 ? mechanical data case: do-214ac (sma) ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes cathode end primary characteristics i f(av) 1.0 a v rrm 50 v, 100 v, 200 v, 400 v, 600 v, 800 v, 1000 v i fsm 40 a, 30 a e as 5 mj i r 1.0 a, 5.0 a v f 1.1 v t j max. 150 c package do-214ac (sma) diode variatio ns single die do-214ac ( s ma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol s1a s1b s1d s1g s1j s1k s1m unit device marking code sa sb sd sg sj sk sm max. recurrent peak reverse voltage v rrm 50 100 200 400 600 800 1000 v max. rms voltage v rms 35 70 140 280 420 560 700 v max. dc blocking voltage v dc 50 100 200 400 600 800 1000 v max. average forward rectified current (fig. 1) i f(av) 1.0 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 40 30 a non-repetitive peak reverse avalanche energy ? at 25 c, i as = 1 a, l = 10 mh e as 5mj operating junction and storage temperature range t j , t stg -55 to +150 c
s1a-m3, s1b-m3, s1d-m3, s1g- m3, s1j-m3, s1k-m3, S1M-M3 www.vishay.com vishay general semiconductor revision: 19-feb-16 2 document number: 89272 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) thermal resistance from junction to ambien t and from junction to lead mounted on pc b with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - max. non-repetitive peak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol s1a s1b s1d s1g s1j s1k s1m unit max. instantaneous forward voltage 1.0 a v f 1.1 v max. dc reverse current ? at rated dc blocking voltage t a = 25 c i r 1.0 5.0 a t a = 125 c 50 typical reverse recovery time i f = 0.5 a, i r = 1.0 a, ? i rr = 0.25 a t rr 1.8 s typical junction capacitance 4.0 v, 1 mhz c j 12 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol s1a s1b s1d s1g s1j s1k s1m unit typical thermal resistance (1) r ? ja 75 85 c/w r ? jl 27 30 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode s1j-m3/61t 0.064 61t 1800 7" diam eter plastic tape and reel s1j-m3/5at 0.064 5at 7500 13" diameter plastic tape and reel resistive or inductive load 0 1.2 60 80 160 20 40 lead temperature (c) average forward current (a) 120 140 100 1.0 0.8 0.6 0.4 0.2 0 0.2" x 0.2" (5.0 mm x 5.0 mm) thick copper pad areas s1a thru s1j s1k, s1m 0 10 100 1 100 10 t l = 110 c 8.3 ms single half sine-wave number of cycles at 60 hz peak forward surge current (a) s1a thru s1j s1k, s1m
s1a-m3, s1b-m3, s1d-m3, s1g- m3, s1j-m3, s1k-m3, S1M-M3 www.vishay.com vishay general semiconductor revision: 19-feb-16 3 document number: 89272 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse leakage characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) t j = 25 c pulse width = 300 s 1 % duty cycle 0.4 100 1.6 2.0 0.8 1.2 instantaneous forward voltage (v ) instantaneous forward current (a) 10 1 0.1 0.01 020 60 40 100 80 0.01 0.001 0.1 10 1 t j = 125 c t j = 25 c t j = 75 c percent of rated peak reverse voltage (%) instantaneous reverse leakage current (a) reverse voltage (v) junction capacitance (pf) 0.1 0.01 1 10 100 100 10 1 t j = 25 c f = 1.0 mhz v sig = 50 mv p-p t - pulse duration (s) transient thermal impedance (c/w) 0.1 0.01 1 10 100 100 1000 10 1 units mounted on 0.20" x 0.20" (5.0 mm x 5.0 mm) x 0.5 mil. inches (0.013 mm) thick copper land areas s1a thru s1j s1k, s1m 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac ( s ma) mountin g pa d layout 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min. 0.030 (0.76) 0.060 (1.52)
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