^m.l-cona\j.ctoi lpiodueti, una. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 hf/vh f powe r transisto r blw8 5 descriptio n n-p- n silico n plana r epitaxia l transisto r intende d fo r us e i n class-a , b an d c operate d mobil e h.f . an d v.h.f . transmitter s wit h a nomina l suppl y voltag e of 12, 5 v. the transisto r i s resistanc e stabilize d an d i s guaranteed t o withstan d sever e loa d mismatc h condition s wit h a suppl y over-voltag e t o 16, 5 v . matche d hp e group s ar e availabl e o n request . i t ha s a 3/8 " flang e envelop e wit h a cerami c cap . al l lead s ar e isolate d fro m th e flange . quic k referenc e dat a r.f . performance u p t o t h = 2 5 c mod e o f operatio n c.w . (class-b ) s.s.b . (class-ab ) vc e v 12, 5 12, 5 f mh z 17 5 1 ,6-2 8 p l w 4 5 3-3 0 (re . p. ) g p d b > 4, 5 typ . 19, 5 n % > 7 5 typ . 3 5 z i q 1.4+j1. 6 z l d 2,7-j1, 3 d 3 d b typ . -3 3 pi n configuratio n pinning-sot12 3 fig. 1 simplifie d outlin e an d symbol . pi n 1 2 3 4 descriptio n collecto r emitte r bas e emitte r n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , parameter s limit s an d packag e dimension s withou t notic e informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . howeve r n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qnnlih / downloaded from: http:///
hf/vh f powe r transisto r blw8 5 rating s limitin g value s i n accordanc e wit h th e absolut e maximu m syste m (ie c 134 ) collector-emitte r voltag e (vb e = 0 ) pea k valu e vces m collector-emitte r voltag e (ope n base ) vce o emitter-bas e voltag e (open-collector ) veb o collector curren t (average ) ic(av ) collector curren t (pea k value) ; f > 1 mh z ic m r.f . powe r dissipatio n u p t o ( f > 1 mhz) ; t m b = 2 5 c p ^ storag e temperatur e t s t g operatin g junctio n temperatur e t , max . 36 v max . 1 6 v max . 4 v max . 9 a max . 2 2 a max . 10 5 w -6 5 t o + 15 0 u c max . 200 "c 1 0 vc e (v ) fig. 2 d.c . soar . 8 0 6 0 4 0 2 0 continuou s r f operatio n 1 derate b y " " 0.58w/k " continuou s x n d,c , operatio n derat e b y 0.4 3 vw o s 5 0 10 0 th( ,, c ) 15 0 fig. 3 r.f . powe r dissipation ; vc e < 16, 5 v ; f > 1 mhz . therma l resistanc e (dissipatio n = 3 0 w ; t m b = 7 9 c , i.e . t h = 7 0 c ) from junctio n t o mountin g bas e (d.c . dissipation ) from junctio n t o mountin g bas e (r.f . dissipation ) from mountin g bas e t o heatsin k rf h j-mb(dc ) rt h j-mb(rf ) rt h mb- h 2, 5 k/ w 1, 8 k/ w 0, 3 k/ w downloaded from: http:///
hf/vh f powe r transisto r blw8 5 characteristic s t j = 2 5 ' c collector-emitte r breakdow n voltag e vb e = 0 ; l c = 5 0 m a collector-emitte r breakdow n voltag e ope n base ; i g = 1 0 0 m a emitter-bas e breakdow n voltag e ope n collector ; i e = 2 5 m a collecto r cut-of f curren t vb e = 0 ; vc e = 18 v secon d breakdow n energy ; l = 2 5 mh ; f = 5 0 h z open bas e r b e = 10 q d.c . curren t gain' 1 ' l c = 4 a ; v c e = 5 v d.c . curren t gai n rati o o f matche d devices' 1 ' l c = 4 a ; vc e = 5 v collector-emitte r saturatio n voltage' 1 ' l c = 12 , 5 a ; i b = 2,5 a transitio n frequenc y at f = 10 0 mhz' 1 ' -i e = 4a;v c b = 12,5 v -i e = 12 , 5 a ; v c b = 12,5 v collecto r capacitanc e at f = 1 mh z | e = | e = 0 ; v cb = 15 v feedbac k capacitanc e a t f = 1 mh z l c = 20 0 ma ; vc e = 1 5 v collector-flang e capacitance not e 1 . measure d unde r puls e conditions : t p < 20 0 us ; 5 < 0,02 . v(br ) ce s v(br ) ce o v(br)eb o ice s esb o esb r h f e h fe1 /h fe 2 vcesa t f t f t c c c r e cc f > 3 6 > 1 6 > 4 < 2 5 > 8 > 8 typ . 5 0 1 0 t o 8 0 < 1, 2 typ . 1, 5 typ . 650 typ . 60 0 typ . 12 0 typ . 8 2 typ . 2 vv v m a m j m j v mh z mh z p f p f p f downloaded from: http:///
hf/vh f powe r transisto r blw8 5 packag e outlin e flange d cerami c package ; 2 mountin g holes ; 4 lead s sot123 a " ?) * . t f i .. l r m 1 0 m m scal e dimension s (millimetr e dimension s ar e derive d fro m th e origina l inc h dimensions ) uni t downloaded from: http:///
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