2SA733 pnp silicon epitaxial planar transistor for switching and af amplifier applications. the transistor is subdivided in to five groups, r, o, y, p and l, according to its dc current gain. as complementary type the np n transistor st 2sc945 is recommended. on special request, thes e transistors can be manufactured in different pin configurations. to-92 plastic package weight approx. 0.19g absolute maximum ratings (t a = 25 o c) symbol value unit collector base voltage -v cbo 60 v collector emitter voltage -v ceo 50 v emitter base voltage -v ebo 5 v collector current -i c 150 ma power dissipation p tot 250 mw junction temperature t j 150 o c storage temperature range t s -55 to +150 o c
2SA733 characteristics at t amb =25 o c symbol min. typ. max. unit dc current gain at -v ce =6v, -i c =1ma current gain group r o y p l h fe h fe h fe h fe h fe 40 70 120 200 350 - - - - - 80 140 240 400 700 - - - - - collector base breakdown voltage at -i c =100 a -v (br)cbo 60 - - v collector emitter breakdown voltage at -i c =10ma -v (br)ceo 50 - - v emitter base breakdown voltage at -i e =10 a -v (br)ebo 5 - - v collector cutoff current at -v cb =60v -i cbo - - 0.1 a emitter cutoff current at -v eb =5v -i ebo - - 0.1 a collector saturation voltage at -i c =100ma, -i b =10ma -v ce(sat) - 0.18 0.3 v base emitter voltage at -v ce =6v, -i c =1ma -v be(on) 0.5 0.62 0.8 v gain bandwidth product at -v ce =6v, -i c =10ma f t 50 180 - mhz output capacitance at -v cb =10v, f=1mhz c ob - 2.8 - pf noise figure at -v ce =6v, -i c =0.3ma at f=100hz, r s =10k f - 6 20 db
2SA733 i c, ma -0.1 10 -1 -10 -100 10 -0.1 -1 i c, ma -10 -100 hfe - i c h f e 100 1000 hfe - i c -1v vce=-6v ta=75 c 25 c h f e 100 -25 c 0 c 50 c 1000 vce=-6v -0.6 -0.1 -0.4 -0.5 - 2 5 c -1 -0.9 -0.7 v be ,v -0.8 -1 i c - m a t a = 7 5 c 25 c 0 c -10 50 c -200 -100 i c - v be v ce =-6v -0.2 collector current vs. collector emitter voltage -80 0 0 -20 i c - m a -60 -40 -100 -8 -1.0 i b =-0.2ma -0.6 -0.4 v ce , v -0.8 -2 0 0 -0.6 -0.8 -0.4 -6 -4 i c - m a -1.6 -2.0 -1.8 -1.0 -1.4 -1.2 -10 -35 -40 -40 -20 v ce , v -10 -10 -30 ib=-5 a -20 -25 -30 -15 -50 collector current vs. collector emitter voltage -45 0 25 125 tamb ( c) 50 75 100 150 total power dissipation vs. ambient temperature 250 p t o t ( m w ) 50 100 200 150 300 free air
2SA733 v ce(sat), vbe(sat) - i c i c, ma ic/ib=10 -0.01 -1 -10 v c e ( s a t ) , v b e ( s a t ) - v -0.1 vce(sat) vbe(sat) -1 100 1 -100 10 10 i e, ma ic/ib=10 f t - m h z 100 500 vce= -6v -1v f t - i e v cb, v cob - v cb 1 -1 -10 100 f=1mhz c o b - p f 10 -100 hie normalized h-parameters vs. collector emitter voltage vce=-6v, ie=1ma, f=1khz hie=5.5k , hre=7.5x10 hfe=20s, hoe=28 s -10 -0.1 -1 vce, v hre hfe hie hoe n o r m a l i z e d h p a r a m e t e r s 0.1 1 10 100 110 0.1 10 0 -100 ie, ma vce=-6v, ie=1ma, f=1khz hie=5.5k , hre=7.5x10 hfe=20s, hoe=28 s normalized h-parameters vs. emitter current -4 n o r m a l i z e d h p a r a m e t e r s hfe hoe hre hoe hfe 1 0.1 hie 10 hre 100 -4 hie hfe hre hoe
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