pmd16k60 pmd16k80 PMD16K100 maximum ratings: (t c =25c) symbol pmd17k60 pmd17k80 pmd17k100 units collector-base voltage v cbo 60 80 100 v collector-emitter voltage v ceo 60 80 100 v emitter-base voltage v ebo 5.0 v continuous collector current i c 20 a peak collector current i cm 40 a continuous base current i b 500 ma power dissipation p d 200 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance ? jc 0.875 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i cer v ce =rated v ceo , r be =1.0k 1.0 ma i cer v ce =rated v ceo , r be =1.0k, t c =150c 5.0 ma i ebo v eb =5.0v 2.0 ma bv ceo i c =100ma (pmd16k60, 17k60) 60 v bv ceo i c =100ma (pmd16k80, 17k80) 80 v bv ceo i c =100ma (PMD16K100, 17k100) 100 v v ce(sat) i c =10a, i b =40ma 2.0 v v be(sat) i c =10a, i b =40ma 2.8 v v be(on) v ce =3.0v, i c =10a 2.8 v h fe v ce =3.0v, i c =10a (pmd16k series) 1.0k 20k h fe v ce =3.0v, i c =10a (pmd17k series) 800 20k h fe v ce =3.0v, i c =7.0a, f=1.0khz 300 f t v ce =3.0v, i c =7.0a, f=1.0mhz 4.0 mhz c ob v cb =10v, i e =0, f=1.0mhz 400 pf pmd16k series npn pmd17k series pnp complementary silicon darlington power transistors description: the central semiconductor pmd16k, pmd17k series types are complementary silicon darlington power transistors, manufactured by the epitaxial base process, mounted in a hermetically sealed metal package, and designed for power switching applications. marking: full part number to-3 case r1 (26-november 2012) www.centralsemi.com
pmd16k series npn pmd17k series pnp complementary silicon darlington power transistors to-3 case - mechanical outline lead code: 1) base 2) emitter case) collector marking: full part number r2 www.centralsemi.com r1 (26-november 2012)
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