20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 uhf power transistor BLU10/12 features ? emitter-ballasting 'esistors for opt't'um temperature profile ? gold metallization ensures excellent reliability ? withstands full load mismatch. description npn si;tcon planar epitaxial transisto- encapsu'a'ec in a 4-pin sot122 envelope. it is designed for common emitter, c!ass-b operation in rrobile radio transmitters in the 470 mhz eorrmunications band. the transistor has a 4-lead 5tud envelope with a ceramic cap. a!i leads are isolated from the stud. pinning - sot122a pin 1 2 description collector emitter 3 | base 4 emitter quick reference data rf performance at t^ = 25 c in a common emitter test circuit. mode of operation c.w. class-b f (mhz) 470 vce (v) 12.5 pl (w) 10 gp (db) > 8 lie (%) > 65 pin configuration rg.1 simplified outline and symbol. warning product and environmental safety - toxic materials this product contains beryllium oxide. the product is entirely safe provided that the bso disc is not damaged. all persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. after use, dispose of as chemical or special waste according to the regulations applying at the location of the user. it must never be thrown out with the general or domestic waste. nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discoveyed in its use. ni semi-conductors encourages customers to verify that datasheets are current before pricing orders.
limiting values in accordance with the absolute maximum system (i ec 134). symbol vcbo vceo vebo 'c> 'c 1 mhz ?u = 25c min. - - - - - - -65 - max. 36 16 3 1.6 4.8 41 150 200 unit v v v a a w "c c 10 'c (a) 1 0.1 hsa2w ? h 70^ rn b-' 5 d 10 100 vce 1 mh f me as is (3) -s ?v 0) ^u^l_l n. \v ^n x x x ^ s ?x. "v ^^ -x x 'x x \ x x. ""^ x. x. 40 80 120 160 th 1 mhz), me rf operation during mismatch z). g.3 power/temperature derating. thermal resistance symbol "lh jirb f^lh iit-h parameter from junction to mounting base from mounting base to heatsink conditions pbl = 41 w; tmb = 25c max. 4.3 0.6 unit k/w k/w
characteristics t, = 25 c. symbol v(br)g80 vpriceo v ?^ '" **** *** ---? 7z9s01b -hs ^^^ 2,bvsl c-f^ i x s ^ 2 1c (a) 4 c current gain as a function of collector current, typical values. 30 (pf) 20 10 0 ( fe = ifl = 0; fig.5 co mea2i3 \. ^= ? ? m ) 5 10 15 20 vcb (v) f = 1 mhz. collector capacitance as a function of lector-base voltage, typical values. 4 *t (ghz) 3 2 1 0 c vcb =12.5 fig.6 ' />? n \ \5 ie (a) v. transition frequency as a function of emitter current, typical values.
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