, u na. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax: (973 ) 376-896 0 BDW64 , BDW64a , BDW64b , BDW64c , BDW64 d pn p silico n powe r darlington s ? designe d fo r complementar y us e wit h bdw63 , bdw63a , bdw63b , bow63 c an d bdw63 d ? 6 0 w a t 25 c cas e temperatur e ? 6 a continuou s collecto r current ? minimu m h f e o f 75 0 a t 3v , 2 a to-22 0 p / (top v h c : <; . f : t < kckag e iew ) 1 2 3 o pi n 2 i s i n electrica l contac t wit h th e mountin g base . absolut e maximu m rating s a t 25 c cas e temperatur e (unles s otherwis e noted ) ratin g collector-bas e voltag e (i e = 0 ) collector-emitte r voltage (i b = 0 ) (se e not e 1 ) bdw6 4 BDW64 a BDW64 b BDW64 c BDW64 d bdw6 4 BDW64 a BDW64 b BDW64 c BDW64 d emitter-bas e voltag e continuou s collecto r curren t continuou s bas e curren t continuou s devic e dissipatio n a t (o r below ) 25" c cas e temperatur e (se e not e 2 ) continuou s devic e dissipatio n a t (o r below ) 25' c fre e ai r temperatur e (se e not e 3 ) undampe d inductiv e loa d energ y (se e not e 4 ) operatin g junctio n temperatur e rang e operatin g temperatur e rang e operatin g free-ai r temperatur e rang e symbo l vcb o vce o veb o ' c i b pto t pto t %li c 2 t j t st g t a valu e -4 5 -6 0 -8 0 -10 0 -12 0 -4 5 -6 0 -8 0 -10 0 -12 0 - 5 - 6 -0. 1 6 0 2 5 0 -65to+15 0 -6 5 t o +15 0 -6 5 t o +15 0 uni t vv v aa w w m j ? c c ? c motes : 1 . these value s appl y whe n th e base-emitte r diod e i s ope n circuited . 2 . derat e linearl y t o 150 c cas e temperatur e a t th e rat e o f 0.4 8 w/c . 3 . derat e linearl y t o 1 50 c fre e ai r temperatur e a t th e rat e o f 1 6 mw/c . 4 . thi s ratin g i s base d o n th e capabilit y o f th e transisto r t o operat e safel y i n a circui t of : l = 20mh , lb(on ) = ' 5 ma ' r b e = 10 0 q , v be (off ) = 0 , r s = 0. 1 0 , v c c = -2 0 v . n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
BDW64 , BDW64a , BDW64b , BDW64c , BDW64 d pn p silico n powe r darlington s electrica l characteristic s a t 25 c cas e temperatur e (unles s otherwis e noted ) paramete r collector-emitte r (br)ce o breakdow n voltag e collector-emitte r ce o cut-of f curren t collecto r cut-of f ' ce o curren t emitte r cut-of f ' eb o curren t forwar d curren t f e transfe r rati o base-emitte r vbe <" > voltag e collector-emitte r ce(sat ) saturatio n voltag e paralle l diod e e c forwar d voltag e tes t condition s bdw6 4 BDW64 a l c = -30m a i b = 0 (se e not e 5 ) BDW64 b BDW64 c BDW64 d v ce = -30 v i b = 0 bdw6 4 v ce = -30 v i b = 0 BDW64 a v ce = -40 v i b = 0 BDW64 b v ce = -50 v i b = 0 BDW64 c v ce = -60 v i b = 0 BDW64 d v cb = -45 v i e = 0 bdw6 4 v cb = -60 v i e = 0 BDW64 a v cb = -80 v i e = 0 BDW64 b v c b = -100 v i e = 0 BDW64 c v c b = -120 v i e = 0 BDW64 d v cb = -45v i e = 0 t c = 150 c bdw6 4 v c b = -6 0 v i e = 0 t c = 1 50 c BDW64 a v cb = -80 v i e = 0 t c *150 c BDW64 b v c b = -100 v i e = 0 t c = 150 c BDW64 c v c b = -120 v i e = 0 t c = 150 c BDW64 d v e b = -5 v l c = 0 v c e = -3 v i q = - 2 a v ce = -3 v i c = -6 a (se e note s 5 an d 6 ) v ce = -3v i c = -2 a (se e note s 5 and 6) ib - - 12m a ' c ~' 2 (se e note s 5 an d 6 ) | b _ -60m a i c = -6 a i f = _ 6 a i r = 0 mi n -4 5 -6 0 -8 0 -10 0 -12 0 75 0 10 0 typ ma x -0. 5 -0. 5 -0. 5 -0. 5 -0. 5 -0. 2 -0. 2 -0. 2 -0. 2 -0. 2 - 5 - 5 - 5 - 5 - 5 - 2 2000 0 -2. 5 -2. 5 - 4 -3 5 uni t v m a m a m a v v v notes : 5 . thes e parameter s mus t b e measure d usin g puls e techniques , t p = 30 0 ms , dut y cycl e ; 2% . 6 . thes e parameter s mus t b e measure d usin g voltage-sensin g contacts , separat e fro m th e curren t carryin g contacts . therma l characteristic s paramete r r ej c junctio n t o cas e therma l resistanc e r oj a junctio n t o fre e ai r therma l resistanc e mi n ty p ma x 2.0 8 62. 5 uni t c/ w c/ w resistive-load-switchin g characteristic s a t 25 c cas e temperatur e paramete r t o n turn-o n tim e t o b turn-of f tim e tes t condition s t i c = -3 a l b(on ) = -12m a l b(off ) = 12m a vbe(off ) = 4. 5 v r l = 10 q t p = 20^,dc<2 % mi n ty p 1 5 ma x uni t m s m s voltag e an d curren t value s show n ar e nominal ; exac t value s var y slightl y wit h transisto r parameters . downloaded from: http:///
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