VS-GB150TH120U www.vishay.com vishay semiconductors revision: 10-jun-15 1 document number: 94714 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 molding type module igbt, 2 in 1 package, 1200 v and 150 a features ? 10 s short circuit capability ? low switching losses ? rugged with ultrafast performance ?v ce(on) with positive temperature coefficient ? low inductance case ? fast and soft reverse re covery antiparallel fwd ? isolated copper baseplate using dcb (direct copper bonding) technology ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications ? inductive heating ? electronic welder ? switching mode power supplies description vishays igbt power module provides ultrafast switching speed as well as short circuit ru ggedness. it is designed for applications such as electronic welder and inductive heating. note (1) repetitive rati ng: pulse width limited by maximum junction temperature. product summary v ces 1200 v i c at t c = 80 c 150 a v ce(on) (typical) at i c = 150 a, t j = 25 c 3.10 v speed 8 khz to 30 khz package double int-a-pak circuit half bridge double int-a-pak absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol test conditions max. units collector to em itter voltage v ces 1200 v gate to emi tter voltage v ges 20 collector current i c t c = 25 c 280 a t c = 80 c 150 pulsed collector current i cm (1) t p = 1 ms 300 diode continuous forward current i f t c = 80 c 150 diode maximum forward current i fm (1) t p = 1 ms 300 maximum power dissipation p d t j = 150 c 1147 w short circuit withstand time t sc t j = 125 c 10 s rms isolation voltage v isol f = 50 hz, t = 1 min 2500 v
VS-GB150TH120U www.vishay.com vishay semiconductors revision: 10-jun-15 2 document number: 94714 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 igbt electrical specifications (t c = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units collector to emitte r breakdown voltage v (br)ces t j = 25 c 1200 - - v collector to emitter saturation voltage v ce(sat) v ge = 15 v, i c = 150 a, t j = 25 c - 3.10 3.60 v ge = 15 v, i c = 150 a, t j = 125 c - 3.45 - gate to emitter threshold voltage v ge(th) v ce = v ge , i c = 1.5 ma, t j = 25 c 4.4 5.2 6.0 collector cut-off current i ces v ce = v ces , v ge = 0 v, t j = 25 c - - 5.0 ma gate to emitter leakage current i ges v ge = v ges , v ce = 0 v, t j = 25 c - - 400 na switching char acteristics parameter symbol test conditions min. typ. max. units turn-on delay time t d(on) v cc = 600 v, i c = 150 a, r g = 6.8 ? , ? v ge = 15 v, t j = 25 c - 612 - ns rise time t r - 116 - turn-off delay time t d(off) - 546 - fall time t f - 125 - turn-on switching loss e on - 17.7 - mj turn-off switching loss e off -8.9- turn-on delay time t d(on) v cc = 600 v, i c = 150 a, r g = 6.8 ? , ? v ge = 15 v, t j = 125 c - 609 - ns rise time t r - 116 - turn-off delay time t d(off) - 564 - fall time t f - 148 - turn-on switching loss e on - 17.5 - mj turn-off switching loss e off - 11.0 - input capacitance c ies v ge = 0 v, v ce = 30 v, f = 1.0 mhz - 12.7 - nf output capacitance c oes -1.14- reverse transfer capacitance c res -0.46- sc data i sc t p ? 10 s, v ge = 15 v, t j = 25 c, ? v cc = 600 v, v cem ? 1200 v - 1400 - a internal gate rsistance r g -2.4- ? stray inductance l ce - - 18 nh module lead resistance, terminal to chip r cc+ee t c = 25 c - 0.32 - m ? diode electrical specifications (t c = 25 c unless otherwise noted) parameter symbol test cond itions min. typ. max. units forward voltage v f i f = 100 a t j = 25 c - 1.75 2.15 v t j = 125 c - 1.80 - reverse recovery charge q rr i f = 150 a, v r = 600 v, ? di f /dt = -1500 a/s ? v ge = -15 v t j = 25 c - 8.2 - c t j = 125 c - 19.1 - peak reverse recovery current i rr t j = 25 c - 85 - a t j = 125 c - 125 - reverse recovery energy e rec t j = 25 c - 4.2 - mj t j = 125 c - 8.4 -
VS-GB150TH120U www.vishay.com vishay semiconductors revision: 10-jun-15 3 document number: 94714 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - igbt typical output characteristics fig. 2 - igbt typical transfer characteristics fig. 3 - igbt switching loss vs. i c fig. 4 - igbt switching loss vs. r g thermal and mechanical specifications parameter symbol test conditions min. typ. max. units maximum junction temperature range t j - - 150 c storage temperature range t stg -40 - 125 c junction to case igbt r ? jc - - 0.109 k/w diode - - 0.180 case to sink (conduct ive grease applied) r ? cs - 0.035 - mounting torque power terminal screw: m5 2.5 to 5.0 nm mounting screw: m6 3.0 to 6.0 weight weight of module - 300 - g 0 50 100 150 200 250 300 0 1 2 3 4 5 v ce (v) i c (a) v g e = 15 v 25 c 125 c 0 50 100 150 200 250 300 4 5 6 7 8 9 10 11 v g e (v) i c (a) v ce = 20 v 25 c 125 c i c (a) 0 10 20 30 40 50 60 0 50 100 150 200 250 300 e on e off v g e = 15 v t j = 125 c r g = 6.8 v cc = 600 v e on ,e off (mj) r g ( ) e on ,e off (mj) 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 v g e = 15 v t j = 125 c i c = 150 a v cc = 600 v e on e off
VS-GB150TH120U www.vishay.com vishay semiconductors revision: 10-jun-15 4 document number: 94714 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - rbsoa fig. 6 - igbt transient thermal impedance fig. 7 - diode typical forward characteristics fig. 8 - diode switching loss vs. i f 0 50 100 150 200 250 300 350 0 300 600 900 1200 1500 v ce (v) i c (a) v g e = 15 v t j = 125 c r g = 6.8 i c , module z thjc (k/w) t (s) 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 i g bt v f (v) i f (a) 0 50 100 150 200 250 300 0.5 0 1 1.5 2 2.5 3 125 c 25 c e (mj) 0 2 4 6 8 10 12 0 50 100 150 200 250 300 i f (a) e rec v g e = - 15 v t j = 125 c v cc = 600 v r g = 6.8
VS-GB150TH120U www.vishay.com vishay semiconductors revision: 10-jun-15 5 document number: 94714 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - diode switching loss vs. r g fig. 10 - diode transient thermal impedance circuit configuration r g ( ) e (mj) 0 2 4 6 8 10 12 010 20 30 40 50 v g e = - 15 v t j = 125 c i c = 150 a v cc = 600 v e rec z thjc (k/w) t (s) 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 diode 1 6 7 3 2 5 4 links to related documents dimensions www.vishay.com/doc?95525
outline dimensions www.vishay.com vishay semiconductors revision: 27-may-13 1 document number: 95525 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 double int-a-pak dimensions in millimeters (inches) mounting depth max. 11 3-m6 16 2.8 x 0.5 31 0.5 30.5 0.5 7.2 0.6 61.4 30 48 0.4 35.4 15 0.4 27 0.4 23 0.3 26 6 28 0.3 93 0.4 106.4 6226 ? 6.4 0.2 28 0.3 20.1 123
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