TSM160N10LCR tai wan semiconductor 1 version: a 1 6 10 n - channel power mosfet 100 v, 46 a , 16 m features low r ds(on) to minimize conductive l oss es logic level low gate charge for fast p ower s witching 100% uis and r g t ested compliant to rohs d irective 2011/65/eu and in acc ordance to weee 2002/96/ec halogen - free according to iec 61249 - 2 - 21 a pplication s bldc motor control telecom power primary and secondary side switch key performance parameters p arameter value unit v ds 100 v r ds(on) (max) v gs = 10v 16 m v gs = 4.5 v 20 q g 36 nc pdfn 56 note: msl 1 (moisture sensitivity level) per j - std - 020 absolute m aximum ratings ( t a = 25 c unless otherwise noted ) p arameter s ymbol l imit unit drain - source voltage v ds 100 v gate - source voltage v gs 20 v continuous drain current (note 1) t c = 25c i d 46 a t a = 25c 8 pulsed drain current i dm 184 a single pulse avalanche current (note 2) i as 26 a single pulse avalanche energy (note 2) e as 101 mj total power dissipation t c = 25 c p d 83 w t c = 125 c 17 total power dissipation t a = 25 c p d 2.6 w t a = 125 c 0.5 operating junction and storage temperature range t j , t stg - 55 to +1 50 c thermal performance p arameter s ymbol l imit unit junction to case thermal resistance r ? j c 1.5 c /w junction to ambient thermal resistance r ? j a 48 c /w thermal performance note: r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistances. the case - thermal reference is defined at the solder mounting surface of the drain pins. r ? ja is guaranteed by design while r ? ca is determined by the users board design.
TSM160N10LCR tai wan semiconductor 2 version: a 1 6 10 electrical specifications ( t a = 25 c unless otherwise noted ) parameter conditions symbol m in t yp m ax u nit static drain - source breakdown voltage v gs = 0v, i d = 250 a bv dss 100 -- -- v gate threshold voltage v gs = v ds , i d = 250 a v gs(th) 1 . 2 1.9 2.5 v gate - source leakage current v gs = 20 v, v ds = 0v i gss -- -- 100 na drain - source leakage current v g s = 0 v, v d s = 100 v i dss -- -- 1 a v g s = 0 v, v d s = 100 v t j = 1 25 c -- -- 100 drain - source on - state resistance (note 3) v gs = 10v, i d = 8 a r ds(on ) -- 14 16 m gs = 4.5 v, i d = 7 a -- 16 20 forward transconductance (note 3) v ds = 5 v, i d = 8 a g fs -- 38 -- s dynamic (note 4 ) total gate charge v gs = 10 v, v ds = 50 v, i d = 8 a q g -- 73 -- nc total gate charge v gs = 4.5 v, v ds = 50 v, i d = 7 a q g -- 36 -- gate - source charge q gs -- 17 -- gate - drain charge q gd -- 15 -- input capacitance v gs = 0v, v ds = 50 v f = 1.0mhz c iss -- 4431 -- pf output capacitance c oss -- 158 -- reverse transfer capacitance c r ss -- 45 -- g ate resistance f = 1 .0 mhz r g 0.5 1.5 3 switching (note 4 ) turn - on delay time v gs = 10v, v ds = 50 v, i d = 8 a, r g = 2 d(on) -- 6.2 -- ns turn - on rise time t r -- 19 -- turn - off delay time t d(off) -- 35 -- turn - off fall time t f -- 21 -- source - drain diode forward voltag e (note 3) v gs = 0v , i s = 8 a v sd - - - - 1.2 v r everse recovery time i s = 8 a , di/dt = 100a/ rr -- 31.5 -- ns r everse recovery charge q rr -- 40 -- nc notes: 1. silicon limited cur rent only . 2. l = 0.3 mh, v gs = 10v, v d d = 50 v, r g = 25, i as = 26 a, starting t j = 25c 3. pulse test: pulse width 300s, duty cycle 2%. 4. switching time is essentially independent of operating temperature. ordering information part no. package packing TSM160N10LCR rlg pdfn56 2500pcs / 13 reel
TSM160N10LCR tai wan semiconductor 3 version: a 1 6 10 characteristics curves ( t a = 25c unless otherwise noted) output characteristics transfer characteristics on - resistance vs. drain current gate - source voltage vs. gate charge on - resistance vs. junction temperature on - resistance vs. gate - source voltage i d , drain current (a) v g s , gate to source voltage (v) v ds , drain to source voltage (v) r ds(on) , drain - source on - resistance ( ) i d , drain current (a) v g s , gate to source voltage (v) q g , gate charge (nc) r ds(on) , drain - source on - resistance (normali z ed) t j , junction temperature ( c) r ds(on) , drain - source on - resistance ( ) v g s , gate to source voltage (v) i d , drain current (a) 0 2 4 6 8 10 0 20 40 60 80 v ds =50v i d =8a 0 0.5 1 1.5 2 2.5 3 -75 -50 -25 0 25 50 75 100 125 150 v gs =10v i d =8a 0 6 12 18 24 30 0 1 2 3 4 5 v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3.5v v gs =4v 0 0.005 0.01 0.015 0.02 0.025 0.03 0 6 12 18 24 30 v gs =10v v gs =4.5v 0 6 12 18 24 30 0 1 2 3 4 5 25 - 55 150 0 0.01 0.02 0.03 0.04 0.05 3 4 5 6 7 8 9 10 i d =8a
TSM160N10LCR tai wan semiconductor 4 version: a 1 6 10 characteristics curves ( t a = 25c unless otherwise noted) capacitance vs. drain - source voltage bv dss vs. junction temperature maximum safe operating are a , junction - to - case source - drain diode forward current vs. voltage normalized thermal transient impedance, junction - to - case normalized effective transient thermal impedance , z ? jc t, square wave pulse duration (sec) c , capacitance (pf) v ds , drain to source voltage (v) bv dss (normalized) drain - source breakdown voltage t j , junction temperature (c) i s , reverse drain current (a) v s d , body diode forward voltage (v) v ds , drain to source voltage (v) i d , drain current (a) 0 1000 2000 3000 4000 5000 6000 0 20 40 60 80 100 ciss coss crss 0.8 0.9 1 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 i d =1ma 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 25 150 - 55 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 single pulse r ?jc =1.5 c/w duty=0.5 duty=0.2 duty=0.1 duty=0.05 duty=0.02 duty=0.01 single notes: duty = t 1 / t 2 t j = t c + p dm x z ?jc x r ?jc 0.1 1 10 100 1000 0.1 1 10 100 r ds(on) single pulse r ?jc =1.5 c/w t c =25 c
TSM160N10LCR tai wan semiconductor 5 version: a 1 6 10 package outline dimensions ( unit: millimeters ) p df n 56 suggested pad layout ( unit: millimeters ) marking diagram g = halogen free y = year code ww = week code (01~52) f = factory code tsc 160 n 10l gywwf
TSM160N10LCR tai wan semiconductor 6 version: a 1 6 10 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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