2017. 07. 11 1/9 semiconductor technical data KUS220N10D n-ch trench mos fet revision no : 2 v dss 100 v r ds(on) (max)@v gs =10v 22 m ? i d 32 a main parameter general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for dc/dc converter, synchronous rectification and a load switch in battery powered applications features h split gate trench technology h ultra low on-resistance h ultra low gate charge (typ. qg=17.0nc) h periodic avalanche rated h pb-free lead plating; rohs compliant h qualified according to jedec h ideal for high-frequency switching and synchronous rectification * : drain current limited by maximum junction temperature. characteristic symbol rating unit drain-source voltage v dss 100 v gate-source voltage v gss ? 20 v drain current @t c =25 ? i d 32 a @t c =100 ? 20 pulsed (note 1) i dp 120* single pulsed avalanche energy (note 2) e as 39 mj repetitive avalanche energy (note 1) e ar 2.1 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 39 w derate above 25 ? 0.31 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 ~ 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 3.1 ? /w thermal resistance, junction-to-ambient r thja 110 ? /w maximum rating (tc=25 ? ) g d s g d s pin connection dpak(1)
2017. 07. 11 2/9 KUS220N10D revision no : 2 electrical characteristics (tc=25 ? ) 2 product name lot no 1 220n10 kus d 001 1 2 marking note 1) repetivity rating : pulse width limited by junction temperature. note 2) l = 43 h, i s =32a, v dd =50v, r g =25 ? , starting t j =25 ? . note 3) i s ? 32a, v dd ? bv dss , starting t j =25 ? . note 4) pulse test : pulse width ? 300 k , duty cycle ? 2%. note 5) essentially independent of operating temperature. characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 100 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 ? - 0.05 - v/ ? drain cut-off current i dss v ds =100v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v gate leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =16a - 17 22 m ? dynamic total gate charge q g v ds =80v, i d =32a v gs =10v (note4,5) - 17.0 - nc gate-source charge q gs - 4.2 - gate-drain charge q gd - 4.1 - turn-on delay time t d(on) v dd =50v i d =32a r g =25 ? (note4,5) - 18 - ns turn-on rise time t r - 22 - turn-off delay time t d(off) - 46 - turn-off fall time t f - 17 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 1060 - pf output capacitance c oss - 390 - reverse transfer capacitance c rss - 39 - source-drain diode ratings continuous source current i s v gs 2017. 07. 11 3/9 KUS220N10D revision no : 2 drain current i d (a) drain - source voltage v ds (v) fig1. i d - v ds - ? drain - source voltage v ds (v) fig2. i d - v ds - fig3. i d - v gs fig4. r ds(on) - i d 0 0 10 20 40 30 24 6 8 drain current i d (a) drain current i d (a) fig6. r ds(on) - t j 60 80 100 20 0 40 050 25 75 gate - source voltage v gs (v) drain current i d (a) 40 30 2.4 0 0.6 1.2 20 1.8 0 10 -75 25 75 125 -25 175 3 2 1 0 fig5. r ds(on) - v gs 0468 210 gate - source voltage v gs (v) 60 80 100 40 0 20 junction temperature t j ( ) c v gs =10v i d =16a v gs =5v v gs =7 v v gs =4.5v v gs =10v v gs =5v v gs =7v v gs =4.5v v gs =10v t j =100 c v ds =2v t j =25 c 10 3 10 2 10 2 10 -2 10 -1 10 0 10 1 10 1 10 -1 10 0 i d =16a v gs =5v v gs =4.5v v gs =7v v gs =10v on - resistance r ds(on) (m ) on - resistance r ds(on) (m ) on - resistance r ds(on) (m )
2017. 07. 11 4/9 KUS220N10D revision no : 2 0.4 1.2 0.8 1.6 75 25 125 175 -25 -75 fig8. v th - t j normalized gate - threshold voltage v th fig7. bv dss - t j normalized breakdown voltage bv dss 1.2 0.9 0.8 1.1 1.0 -75 -25 25 75 175 125 junction temperature t j ( ) junction temperature t j ( ) source - drain voltage v sd (v) fig10. i s - v sd - reverse drain current i s (a) fig 9. i s - v sd - ? source - drain voltage v sd (v) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 reverse drain current i s (a) 30 300 20 0 10 v gs =0v i ds =250ua gate - charge q g (nc) 0 20 40 60 80 100 0 2 4 6 8 10 15 520 10 0 fig12. q g - v gs drain - source voltage v ds (v) gate - source voltage v gs (v) t j =100 c t j =25 c fig11. c - v ds capacitance (pf) drain - source voltage v ds (v) 10 3 3000 10 2 60 80 100 10 0 20 10 1 40 0 c rss c oss c iss frequency=1mhz, v gs =0v i d =32a v ds v ds max 20% 80% 0.0 0.4 0.6 0.8 0.2 1.0 1.2 1.4 10 2 10 1 10 -1 10 0 50% v gs =10v v gs =7v v gs =4v v g s =3v v gs =2v v gs =0v
2017. 07. 11 5/9 KUS220N10D revision no : 2 0 40 30 20 10 50 75 50 100 125 150 25 0 fig14. p tot - t c power dissipation p tot (w) fig13. i d - t j drain current i d (a) 20 10 0 40 30 0 25 50 75 125 150 100 case temperature t c ( ) junction temperature t j ( ) fig16. s/w loss - i d switching loss (mj) drain current i d (a) 0.2 0.15 30 40 0.05 0 10 0.1 20 0 drain current i d (a) 0 50 25 75 100 30 10 40 20 0 fig15. s/w time - i d switching time (ns) td(on) eon eoff td(off) tr tf fig18. s/w loss - r g switching loss (mj) 0.25 0.2 150 200 0.1 0.05 0 50 0.15 100 0 0 100 200 300 150 50 200 100 0 fig17. s/w time - r g switching time (ns) v ds =50v, v gs =10v, i d =32a resistive load td(on) eon eoff td(off) tr tf v ds =50v, v gs =10v, i d =32a resistive load v ds =50v, v gs =10v, r g =25 inductive load v ds =50v, v gs =10v, r g =25 inductive load gate resistance r g ( ) gate resistance r g ( )
2017. 07. 11 6/9 KUS220N10D revision no : 2 time (sec) 10 -2 10 -1 10 1 10 0 fig20. transient thermal response curve (junction - case) transient thermal resistance ( ? /w) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 - duty factor, d= t 1 /t 2 t 1 t 2 p dm - r th(j-c) = 3.1 c/w max duty=0 . 5 0.05 0.1 0.02 0.2 singl e pulse 0.01 time (sec) 10 -1 10 0 10 1 10 2 fig21. transient thermal response curve (junction - ambient) transient thermal resistance ( ? /w) 10 -3 10 -1 10 0 10 1 10 2 10 3 10 -2 - duty factor, d= t 1 /t 2 t 1 t 2 p dm - r th(j-a) = 110 c/w max fig 19. safe operation area drain - source voltage v ds (v) 0.1 1 10 100 drain current i d (a) 100 300 10 1 0.1 t c = 25 single nonrepetitive pulse c 10us 100us 1ms 10ms dc duty=0.5 0. 05 0.1 0.02 0.2 single pulse 0.01 300
2017. 07. 11 7/9 KUS220N10D revision no : 2 fig22. gate charge i d v gs v gs v gs i constant 10v 10 v 25 w r l q g q gd q gs q t p fig24. resistive load switching fig23. single pulsed avalanche energy v ds (t) i d (t) v ds v ds v ds v ds v gs v gs 10 v 25w l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss
2017. 07. 11 8/9 KUS220N10D revision no : 2 fig25. source - drain diode reverse recovery and dv /dt i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forward current body diode reverse current di/dt v dd i rm 0.5 v dss l
2017. 07. 11 9/9 KUS220N10D revision no : 2 dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max 0.90 max e e m n h 0.70 min o 0.1 max n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j o package outline
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