i, o ne. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . silico n pn p powe r transistor s telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 d45 h serie s descriptio n ? lo w saturatio n voltag e ? fas t switchin g speed s ? complemen t t o typ e d44 h serie s application s ? designe d fo r genera l pourpos e powe r amplificatio n an d switchin g suc h a s outpu t o r drive r stage s i n application s suc h a s switchin g regulators.converter s an d powe r amplifier . absolut e maximu m ratings(t a =25c ) symbo l vce o veb o i c ic m p c t ] tst g paramete r collector-emitte r voltag e emitter-bas e voltag e d45h 8 d45h10.1 1 collecto r current-continuou s collecto r current-pea k collecto r powe r dissipatio n @t c =25' c junctio n temperatur e storag e temperatur e rang e valu e -6 0 -8 0 - 5 -1 0 -2 0 -5 0 15 0 -55-15 0 uni t v v aa w ? c ? c therma l characteristic s symbo l r( h j- c rt h j- a paramete r therma l resistance , junctio n t o cas e therma l resistance , junctio n t o ambien t ma x 2. 5 7 5 uni t r/ w "cm / , ^ 1 1 2 3 2 3 pi n 1.bas e 2 . collecto r 3.bwitte r to-220 c packag e w - - b v\ i'to j a " ' i i f~~ v ~* l ^er t e jdoc 1 ^ i f s- -4(* s soi- , 1 , i j f t ?" c _^_ _ di m a b c d f g h j k l q r s u v m m wi n 15.7 0 9.9 0 4.2 0 0.7 0 3.4 0 4.9 8 2.7 0 0.4 4 13.2 0 1.1 0 2.7 0 2.5 0 1.2 9 6.4 5 8.6 6 ma x 15.9 0 10.1 0 4.4 0 0.9 0 3.6 0 5.1 8 2.9 0 0.4 6 13.4 0 1.3 0 2.9 0 2.7 0 1.3 1 6.6 5 8.8 6 ^ ~ ~ sof t ? * t j n j semi-conductor s reserve s th e righ t t o chang e test conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o h e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
silico n pn p powe r transistor s d45 h serie s electrica l characteristic s t c =25 c unles s otherwis e specifie d symbo l vce(sat ) vbe(sat ) ice s ieb o hpe- 1 hfe- 2 co b f r paramete r collector-emitte r saturatio n voltag e d45h1 0 d45h8.1 1 base-emitte r saturatio n voltag e collecto r cutof f curren t emitte r cutof f curren t d c curren t gai n d c curren t gai n d45h1 0 d45h8.1 1 d45h1 0 d45h8.1 1 outpu t capacitanc e current-gai n bandwidt h produc t condition s i c =-8a;i b =-0.8 a lc=-8a;l b =-0.4 a i c =-8a;i b =-0.8 a v ce = rate d vceo ; v eb = -5v ; l c = 0 | _ t a . \/^,_ 1\ u 4 a ? \a-i- - -1\ v cb =-10v,f=0.1mh z lc=-0.5a;v ce =- 1 ov;f t est=20mh z mi n 3 5 6 0 2 0 4 0 ty p 13 0 5 0 ma x - 1 -1. 5 -1 0 -10 0 uni t v v u a u a p f mh z switchin g time s t s t f storag e tim e fal l tim e lc = -5a ; i b 1 = -i b 2 = -0.5 a v cc = 20 v 0. 5 0.1 4 n s u s downloaded from: http:///
|
