sot - 89 - 3l 1. base 2. collector 3. emitter jiang su changjiang electronics technology co., ltd sot - 89 - 3l plastic - encapsulate transistors 2s c 3650 transistor ( npn ) features ? small flat p ackage ? high dc current gain ? low v ce(sat) ? large current capacity applications ? lf amplifiers, various drivers, muting circuit marking:cf maximum ratings (t a =25 unless otherwise noted) electrical characteristics ( t a =25 unless otherwise specified ) p arameter symbol test conditions min typ max unit collector - base bre akdown voltage v (br) cbo i c = 1 0 a ,i e =0 30 v c ollector - emitter breakdown voltage v (br) ceo i c = 1 ma , i b =0 25 v emitter - base breakdown voltage v (br) e b o i e = 1 0 a ,i c =0 1 5 v collector cut - off current i cbo v cb = 20 v,i e =0 0. 1 a emitter cut - off current i ebo v e b = 10 v,i c =0 0. 1 a h fe (1) v ce = 5 v , i c = 5 00m a 800 320 0 dc current gain h fe (2) v ce = 5 v , i c = 1 0m a 600 collector - emitter saturation voltage v ce(sat) i c = 500m a ,i b = 10 m a 0.5 v base - emitter saturation voltage v b e(sat) i c =500m a ,i b = 10m a 1.2 v transition frequency f t v ce = 10 v,i c = 50 m a 150 mhz collector output capacitance c ob v cb = 10 v, i e =0, f=1mhz 17 pf symbol parameter value unit v cbo collector - b ase v oltage 30 v v ceo collector - e mitter v oltage 25 v v ebo emitter - b ase v oltage 15 v i c collector c urrent 1.2 a p c collector p ower d issipation 500 m w r ja thermal resistance from j unction to ambient 250 / w t j junction t emperature 150 t stg s torage t emperature - 55~+150 www.cj-elec.com 1 www.cj-elec.com c,oct,2015
200 400 600 800 1000 0 200 400 600 800 1000 1200 0.1 1 10 1 10 100 1000 0 20406080100 0 40 80 120 160 200 10 100 1000 500 1000 1500 2000 2500 3000 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 1 10 100 1000 200 400 600 800 1000 1 10 100 1000 0 100 200 300 0246810 0 200 400 600 800 1000 v ce =5v t a =25 t a =100 o c base-emitter voltage v be (mv) collector current i c (ma) i c ?? v be 20 f=1mhz i e =0 / i c =0 t a =25 o c reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib ?? c ib c ob transition frequency f t (mhz) collector current i c (ma) v ce =10v t a =25 o c i c f t ?? v ce = 5v t a =100 o c t a =25 o c collector current i c (ma) dc current gain h fe i c h fe ?? collector power dissipation p c (w) ambient temperature t a ( ) p c ?? t a collector current i c (ma) base-emitter saturation voltage v besat (mv) t a =25 t a =100 =50 i c v besat ?? t a =25 t a =100 =50 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (ma) common emitter t a =25 0.5ma 0.45ma 0.4ma 0.35ma 0.3ma 0.25ma 0.2ma 0.15ma 0.1ma i b =0.05ma collector-emitter voltage v ce (v) collector current i c (ma) static characteristic typical characteristics www.cj-elec.com 2 www.cj-elec.com c,oct,2015
min m a x min m a x a 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 d 4.400 4.600 0.173 0.181 d1 e 2.300 2.600 0.091 0.102 e1 3.940 4.250 0.155 0.167 e e1 l 0.900 1.200 0.035 0.047 symbol dimensions in millimeters dimensions in inches 1.550 ref. 0.061 ref. 1.500 typ. 0.060 typ. 3.000 typ. 0.118 typ. 6 2 7 / 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 7 / 6 x j j h v w h g 3 d g / d \ r x w www.cj-elec.com 3 www.cj-elec.com c,oct,2015
6 2 7 / 7 d s h d q g 5 h h o www.cj-elec.com 4 www.cj-elec.com c,oct,2015
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