VRF141 VRF141mp 28v, 150w, 175mhz the VRF141 is a gold-metallized silicon n-channel rf power transistor de-signed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. features improved ruggedness v (br)dss = 80 v 150w with 22db typical gain @ 30mhz, 28v 150w with 13db typical gain @ 175mhz, 28v excellent stability & low imd common source con? guration available in matched pairs 30:1 load vswr capability at speci? ed operating conditions nitride passivated refractory gold metallization high voltage replacement for mrf141 rohs compliant symbol parameter VRF141(mp) unit v dss drain-source voltage 80 v i d continuous drain current @ t c = 25c 20 a v gs gate-source voltage 40 v p d total device dissipation @ t c = 25c 300 w t stg storage temperature range -65 to 150 c t j operating junction temperature 200 rf power vertical mosfet maximum ratings all ratings: t c =25 c unless otherwise speci? ed static electrical characteristics symbol parameter min typ max unit v (br)dss drain-source breakdown voltage (v gs = 0v, i d = 100ma) 80 v v ds(on) on state drain voltage (i d(on) = 10a, v gs = 10v) 0.9 1.0 i dss zero gate voltage drain current (v ds = 60v, v gs = 0v) 1.0 ma i gss gate-source leakage current (v ds = 20v, v ds = 0v) 1.0 a g fs forward transconductance (v ds = 10v, i d = 5a) 5.0 mhos v gs(th) gate threshold voltage (v ds = 10v, i d = 100ma) 2.9 3.6 4.4 v microsemi website - http://www.microsemi.com dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 400 pf c oss output capacitance v ds = 28v 375 c rss reverse transfer capacitance f = 1mhz 50 050-4942 rev d 9-2010 thermal characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 0.60 c/w caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. downloaded from: http:///
class a characteristics symbol test conditions min typ max unit g ps f 1 = 30mhz, f 2 = 30.001mhz ,v dd = 28v, i dq = 4.0a, p out = 50w pep 23 db imd (d3) f 1 = 30mhz, f 2 = 30.001mhz ,v dd = 28v, i dq = 4.0a, p out = 50w pep -50 imd (d9-d13) f 1 = 30mhz, f 2 = 30.001mhz ,v dd = 28v, i dq = 4.0a, p out = 50w pep -75 functional characteristics VRF141(mp) symbol parameter min typ max unit g ps f 1 = 30mhz, f 2 = 30.001mhz, v dd = 28v, i dq = 250ma, p out = 150w pep 16 20 db g ps f 1 = 175mhz, v dd = 28v, i dq = 250ma, p out = 150w 13 f 1 = 30mhz, f 2 = 30.001mhz ,v dd = 28v, i dq = 250ma, p out = 150w pep 40 45 % imd (d3) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 28v, i dq = 250ma, p out = 150w pep 1 -30 -28 db imd (d11) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 28v, i dq = 250ma, p out = 150w pep -60 f 1 = 30mhz, f 2 = 30.001mhz, v dd = 28v, i dq = 250ma, p out = 150w pep 30:1 vswr - all phase angles no degradation in output power 1. to mil-std-1311 version a, test method 2204b, two tone, reference each tone microsemi reserves the right to change, without notice, the speci ? cations and information contained herein. 050-4942 rev d 9-2010 1 10 100 11 01 0 0 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 0 10 20 30 40 50 60 0 5 10 15 20 25 1 10 100 0 10 20 30 40 50 60 c iss v ds(on ) , drain-to-source voltage (v) figure 1, output characteristics i d , drain current (a) i d , drain current (a) t j = 125c v ds , drain-to-source voltage (v) figure 3, capacitance vs drain-to-source voltage c, capacitance (pf) v ds , drain-to-source voltage (v) figure 4, forward safe operating area i d , drain current (v) 4v 5v 6v 7v 8v 9v 10v 13v v gs , gate-to-source voltage (v) figure 2, transfer characteristics 250 s pulse test<0.5 % duty cycle t j = -55c t j = 25c c oss c rss r ds(on) t j = 125c t c = 75c typical performance curves pdmax i dmax downloaded from: http:///
VRF141(mp) 050-4942 rev d 9-2010 ? 50 ? 45 ? 40 ? 35 ? 30 ? 25 ? 20 0 25 50 75 100 125 150 175 200 225 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 -5 10 -4 10 -3 10 -2 10 1.0 0.5 single pulse 0.1 0.3 0.7 0.05 d = 0.9 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t 1 = pulse duration z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 5. maximum effective transient thermal impedance junction-to-case vs pulse duration 0 50 100 150 200 250 0 1 2 3 4 p out , output power (watts pep) figure 6. imd versus p out imd, intermodulation distortion (db) output power (w pep ) p out , input power (watts pep) figure 7. p in versus p out typical performance curves vdd=28v, idq = 250ma, freq=150mhz vdd=28v, idq = 250ma, freq=30mhz im3 im5 0 50 100 150 200 250 0 5 10 15 20 25 output power (w pep ) p out , input power (watts pep) figure 7. p in versus p out vdd=28v, idq = 250ma, freq=175mhz downloaded from: http:///
VRF141(mp) 175 mhz test circuit 30 mhz test circuit 050-4942 rev d 9-2010 downloaded from: http:///
VRF141(mp) 050-4942 rev d 9-2010 a u m m q r b 1 4 3 2 d k e seating plane c j h pin 1 - source pin 2 - gate pin 3 - source pin 4 - drain m174 package outline .5? soe all dimensions to be .005? dim inches millimeters min max min max a 0.096 0.990 24.39 25.14 b 0.465 0.510 11.82 12.95 c 0.229 0.275 5.82 6.98 d 0.216 0.235 5.49 5.96 e 0.084 0.110 2.14 2.79 h 0.144 0.178 3.66 4.52 j 0.003 0.007 0.08 0.17 k 0.435 11.0 m 45 nom 45 nom q 0.115 0.130 2.93 3.30 r 0.246 0.255 6.25 6.47 u 0.720 0.730 18.29 18.54 adding mp at the end of p/n speci ? es a matched pair where v gs(th) is matched between the two parts. v th values are marked on the devices per the following table. code vth range code 2 vth range a 2.900 - 2.975 m 3.650 - 3.725 b 2.975 - 3.050 n 3.725 - 3.800 c 3.050 - 3.125 p 3.800 - 3.875 d 3.125 - 3.200 r 3.875 - 3.950 e 3.200 - 3.275 s 3.950 - 4.025 f 3.275 - 3.350 t 4.025 - 4.100 g 3.350 - 3.425 w 4.100 - 4.175 h 3.425 - 3.500 x 4.175 - 4.250 j 3.500 - 3.575 y 4.250 - 4.325 k 3.575 - 3.650 z 4.325 - 4.400 v th values are based on microsemi measurements at datasheet conditions with an accuracy of 1.0%. downloaded from: http:///
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