i nchange semiconductor isc website isc & iscsemi is registered tr a demark 1 isc silicon npn darlington power transistor 2 sd 962 description high collector - emitter breakdown voltage - : v (br)ceo = 20 0v( min ) high dc current gain high reliability good linearity of h fe wide area of safe operation minimum lot - to - lot variations for robust device performance and reliable operation applications designed for s eries regulators ,color tv, power supplies and similar devices applications. a bsolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector - b ase v oltage 20 0 v v ceo collector - e mitter v oltage 20 0 v v ebo emitter - b ase v oltage 6 v i c collector c urrent - continuous 5 a i c p collector c urrent - peak 8 a p c collector p ower d issipation @ t c =25 8 0 w t j junction t emperature 150 t stg storage t emperature range - 5 5 ~ 150
i nchange semiconductor isc website isc & iscsemi is registered tr a demark 2 isc silicon npn darlington power transistor 2 sd 962 electrical characteristics t c =25 v ( br )c eo collector - e mitter breakdown v oltage i c = 1 0m a , i b = 0 200 v v (br)cbo collector - base breakdown v oltage i c = 1m a; i b = 0 200 v v (br)ebo e mitter - base breakdown v oltage i e = 3 m a ; i c = 0 6 v v c e ( sat ) - 1 collector - e mitter s aturation v oltage i c = 3 a , i b = 12m a 2.0 v v c e (sat) - 2 collector - e mitter s aturation voltage i c = 5 a , i b = 20m a 4.0 v v be (on) b ase - e mitter o n v oltage i c = 3.0 a ; v ce = 3 v 2 .5 v i cbo collector c utoff current v cb = 2 0 0v , i e = 0 0.1 ma i ceo collector c utoff c urrent v ce = 20 0v , i b = 0 0.5 m a i ebo emitter c utoff c urrent v eb = 5 v; i c = 0 3 ma h fe dc c urrent g ain i c = 1 a ; v ce = 4 v 10 00 2 0000
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