TSM160P04LCRH tai wan semiconductor 1 version: b 1 707 p - channel power mosfet - 40 v, - 51 a , 16m features aec - q101 rev - d qualified logic level 100% uis and r g t ested compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec halogen - free according to iec 61249 - 2 - 21 a pplication s 12v battery system for automotive battery management system i nfotainment product summary parameter value unit v ds - 40 v r ds(on) (max) v gs = - 10v 16 m v gs = - 4.5 v 22 q g 23 nc note: msl 1 (moisture sensitivity level) per j - std - 020 absolute m aximum ratings ( t a = 25 c unless otherwise noted ) p arameter s ymbol l imit unit drain - source voltage v ds - 40 v gate - source voltage v gs 20 v continuous drain current (note 1) t c = 25c i d - 51 a t a = 25c - 10 pulsed drain current i dm - 204 a single pulse avalanche current (note 2) i as - 27 a single pulse avalanche energy (note 2) e as 109 mj total power dissipation t c = 25 c p d 69 w t c = 125 c 14 total power dissipation t a = 25 c p d 2.6 w t a = 125 c 0.5 operating junction and storage temperature range t j , t stg - 55 to +1 50 c thermal resistance p arameter s ymbol l imit unit thermal resistance C junction to case r ? jc 1.8 c /w thermal resistance C junction to ambient r ? ja 48 c /w thermal performance note : r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistances. the case - thermal reference is defined at the solder mounting surface of the drain pins. r ? ja is guaranteed by design while r ? ca is determined by the users board design. pdfn 56
TSM160P04LCRH tai wan semiconductor 2 version: b 1 707 electrical characteristics ( t a = 25 c unless otherwise noted ) parameter conditions symbol m in . t yp . m ax . u nit static drain - source breakdown voltage v gs = 0v, i d = - 250 a bv dss - 40 -- -- v gate threshold voltage v g s = v d s , i d = - 250 a v gs(th) - 1 - 1.5 - 2.5 v gate - source leakage current v gs = 20 v, v ds = 0v i gss -- -- 100 na drain - source leakage current v gs = 0v , v ds = - 40 v i dss -- -- - 1 a v gs = 0v, v ds = - 40 v t j = 1 50 c -- -- - 100 drain - source on - state resistance (note 3 ) v gs = - 10v, i d = - 10 a r ds(on) -- 9.9 16 m gs = - 10v, i d = - 10 a, t j = 1 50 c -- 16.8 27 .2 v gs = - 4.5 v, i d = - 8 a -- 13.5 22 forward transconductance (note 3 ) v ds = - 5 v, i d = - 10 a g fs -- 31 -- s dynamic (note 4 ) total gate charge v gs = - 10 v, i d = - 10 a , v ds = - 20 v q g -- 48 -- nc total gate charge v gs = - 4.5 v, i d = - 8 a , v ds = - 20 v q g -- 23 -- gate - source charge q gs -- 7 -- gate - drain charge q gd -- 9 -- input capacitance v gs = 0v, v ds = - 20 v, f = 1mhz c iss -- 2712 -- pf output capacitance c oss -- 270 -- reverse transfer capacitance c rss -- 150 -- gate resistance f = 1mhz r g 1.9 6.2 12.4 switching (note 4 ) turn - on delay time v gs = - 10v, v ds = - 20 v, i d = - 10 a, r g = 2 d(on) -- 6.8 -- ns rise time t r -- 2.2 -- turn - off delay time t d(off) -- 63 -- fall time t f -- 32 -- source - drain diode diode forward voltag e (note 3 ) v gs = 0v , i s = - 10 a v sd - - - - - 1.2 v r everse recovery time i s = - 10 a, di/dt = 100a/ rr -- 19 -- ns r everse recovery charge q rr -- 11 -- n c note s : 1. silicon limited c urrent only . 2. l = 0.3 mh, v gs = - 10 v, v d d = - 25 v, r g = 25 , i as = - 27 a, starting t j = 25c 3. pulse test: pulse width 300s, duty cycle 2%. 4. switching time is essentially independent of operating temperature. ordering information part no. package packing tsm160p04lcr h rlg pdfn 56 2,500pcs / 13 reel
TSM160P04LCRH tai wan semiconductor 3 version: b 1 707 characteristics curves ( t a = 25c unless otherwise noted) output characteristics transfer characteristics on - resistance vs. drain current gate - source voltage vs. gate charge on - resistance vs. junction temperature on - resistance vs. gate - source voltage - i d , drain current (a) - v g s , gate to source voltage (v) - v ds , drain to source voltage (v) r ds (on) , drain - source on - resistance ( ) - i d , drain current (a) - v g s , gate to source voltage (v) q g , gate charge (nc) r ds(on) , drain - source on - resistance (normali z ed) t j , junction temperature ( c) r ds(on) , drain - source on - resistance ( ) - v g s , gate to source voltage (v) - i d , drain current (a) 0 2 4 6 8 10 0 10 20 30 40 50 v ds = - 20v i d = - 10a 0.6 0.8 1 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 v gs = - 10v i d = - 10a 0 8 16 24 32 40 0 1 2 3 4 v gs = - 10v v gs = - 7v v gs = - 5v v gs = - 4.5v v gs = - 4v v gs = - 3.5v v gs = - 3v 0 0.004 0.008 0.012 0.016 0.02 0 8 16 24 32 40 v gs = - 10v v gs = - 4.5v 0 0.01 0.02 0.03 0.04 0.05 0.06 2 3 4 5 6 7 8 9 10 i d = - 10a 0 8 16 24 32 40 0 1 2 3 4 25 - 55 150
TSM160P04LCRH tai wan semiconductor 4 version: b 1 707 characteristics curves ( t a = 25c unless otherwise noted) capacitance vs. drain - source voltage bv dss vs. junction temperature maximum safe operating are a , junction - to - case source - drain diode forward current vs. voltage normalized thermal transient impedance, junction - to - case normalized effective transient thermal impedance , z ? jc t, square wave pulse duration (sec) c , capacitance (pf) - v ds , drain to source voltage (v) bv dss (normalized) drain - source breakdown voltage t j , junction temperature (c) - i s , reverse drain current (a) - v s d , body diode forward voltage (v) - v ds , drain to source voltage (v) - i d , drain current (a) 0 500 1000 1500 2000 2500 3000 3500 4000 0 8 16 24 32 40 ciss coss crss 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 single pulse r ?jc =1.8 c/w duty=0.5 duty=0.2 duty=0.1 duty=0.05 duty=0.02 duty=0.01 single notes: duty = t 1 / t 2 t j = t c + p dm x z ?jc x r ?jc 0.8 0.9 1 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 i d = - 1ma 1 10 100 1000 0.1 1 10 100 r ds(on) single pulse r ?jc =1.8 c/w t c =25 c 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 25 150 - 55
TSM160P04LCRH tai wan semiconductor 5 version: b 1 707 package outline dimensions ( unit: millimeters ) p d f n5 6 suggested pad layout ( unit: millimeters ) marking diagram g = halogen free y = year code ww = week code (01~52) f = factory code _ = aec - q101 qualified tsc 160p04l gyww f
TSM160P04LCRH tai wan semiconductor 6 version: b 1 707 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products sh own herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from suc h improper use or sale. s c
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