APT50N60JCCU2 APT50N60JCCU2 C rev 3 october, 2012 www.microsemi.com 1-4 absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be follo wed. g s d k symbol parameter max ratings unit v dss drain - source breakdown voltage 600 v i d continuous drain current t c = 25c 50 a t c = 80c 38 i dm pulsed drain current 130 v gs gate - source voltage 20 v r dson drain - source on resistance 45 m p d maximum power dissipation t c = 25c 290 w i ar avalanche current (repetitive and non repetitive) 15 a e ar repetitive avalanche energy 3 mj e as single pulse avalanche energy 1900 application ? ac and dc motor control ? switched mode power supplies ? power factor correction ? brake switch features ? - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated ? sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? isotop ? package (sot-227) ? very low stray inductance ? high level of integration benefits ? outstanding performance at high frequency operation ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? rohs compliant isotop ? boost chopper super junction mosfet power modul e k d g s v dss = 600v r dson = 45m max @ tj = 25c i d = 50a @ tc = 25c downloaded from: http:///
APT50N60JCCU2 APT50N60JCCU2 C rev 3 october, 2012 www.microsemi.com 2-4 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i dss zero gate voltage drain current v gs = 0v,v ds = 600v t j = 25c 250 a v gs = 0v,v ds = 600v t j = 125c 500 r ds(on) drain C source on resistance v gs = 10v, i d = 22.5a 40 45 m v gs ( th ) gate threshold voltage v gs = v ds , i d = 3ma 2.1 3 3.9 v i gss gate C source leakage current v gs = 20 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v ; v ds = 25v f = 1mhz 6.8 nf c oss output capacitance 0.32 q g total gate charge v gs = 10v v bus = 300v i d = 44a 150 nc q gs gate C source charge 34 q gd gate C drain charge 51 t d(on) turn-on delay time tj=25c v gs = 10v v bus = 400v i d = 44a r g = 3.3 30 ns t r rise time 20 t d(off) turn-off delay time 100 t f fall time 20 e on turn-on switching energy tj=25c v gs = 10v ; v bus = 400v i d = 44a ; r g = 3.3 405 j e off turn-off switching energy 520 e on turn-on switching energy tj=125c v gs = 10v ; v bus = 400v i d = 44a ; r g = 3.3 660 j e off turn-off switching energy 635 v sd diode forward voltage v gs = 0v, i s = - 44a 0.9 1.2 v t rr reverse recovery time i s = - 44a v r = 400v di s /dt = 100a/s t j = 25c 600 ns q rr reverse recovery charge t j = 25c 17 c sic chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v i rm maximum reverse leakage current v r =600v t j = 25c 100 400 a t j = 175c 200 2000 i f(av) maximum average forward current 50% duty cycle tc = 125c 20 a v f diode forward voltage i f = 20a t j = 25c 1.6 1.8 v t j = 175c 2 2.4 q c total capacitive charge i f = 20a, v r = 300v di/dt =800a/s 28 nc q total capacitance f = 1mhz, v r = 200v 130 pf f = 1mhz, v r = 400v 100 downloaded from: http:///
APT50N60JCCU2 APT50N60JCCU2 C rev 3 october, 2012 www.microsemi.com 3-4 thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case thermal resistance coolmos 0.43 c/w sic diode 1.4 r thja junction to ambient (igbt & diode) 20 v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j ,t stg storage temperature range -40 150 c t l max lead temp for soldering:0.063 from case for 10 sec 300 torque mounting torque (mounting = 8-32 or 4mm machine and terminals = 4mm machine) 1.5 n.m wt package weight 29.2 g sot-227 (isotop ? ) package outline 31.5 (1.240)31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m4 (4 places) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) * r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) emitter terminals are shortedinternally. current handling capability is equal for either emitter terminal. coolmos? comprise a new family of transi stors developed by infineon technologies ag. coolmos is a trademark of infineon technologies ag. isotop? is a registered trademark of st microelectronics nv source gate drain cathode downloaded from: http:///
APT50N60JCCU2 APT50N60JCCU2 C rev 3 october, 2012 www.microsemi.com 4-4 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custom ers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, emp loyees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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