AUIRGDC0250 v ces = 1200v i c = 81a @ t c = 100c v ce(on) typ. = 1.37v @ 33a g c e gate collector emitter automotive grade parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 141 ? i c @ t c = 100c continuous collector current 81 i cm pulse collector current, v ge = 15v ? 99 a i lm clamped inductive load current, v ge = 20v ? 99 v ge continuous gate-to-emitter voltage 20 v transient gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 543 w p d @ t c = 100c maximum power dissipation 217 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. (through hole mounting) 300 (0.063 in. (1.6mm) from case) absolute maximum ratings stresses beyond those listed under ?absolute maximum ra tings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condi tion beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. base part number package type standard pack orderable part number form quantity AUIRGDC0250 super-to-220 tube 50 AUIRGDC0250 1 2018-03-01 super-to-220 AUIRGDC0250 * qualification standards can be found at www.infineon.com benefits ? device optimized for soft switching applications ? high efficiency due to low v ce(on) , low switching losses ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi thermal resistance parameter typ. max. units r ? jc (igbt) thermal resistance junction-to-case (each igbt) ? ??? 0.23 c/w r ? cs thermal resistance, case-to-sink (flat, greased surface) 0.50 ??? r ? ja thermal resistance, junction-to-ambient (typical socket mount) ??? 62 features ? low v ce (on) planar igbt technology ? low switching losses ? square rbsoa ? 100% of the parts tested for ilm ? ? positive v ce (on) temperature coefficient ? reflow capable per jdsd22-a113 ? lead-free, rohs compliant ? automotive qualified * e c g n-channel application ? ptc heater ? relay replacement
AUIRGDC0250 2 2018-03-01 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 250a ?? ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 1.2 ? v/c v ge = 0v, i c = 1ma (25c-150c) ? v ce(on) collector-to-emitter saturation voltage ? 1.37 1.57 v i c = 33a, v ge = 15v, t j = 25c ? 1.45 ? i c = 33a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 3.0 ? 6.0 v v ce = v ge , i c = 250a ? v ge(th) / ? tj threshold voltage temp. coefficient ? -15 ? mv/c v ce = v ge , i c = 250a (25c-150c) gfe forward transconductance ? 30 ? s v ce = 50v, i c = 33a,pw = 20s i ces collector-to-emitter leakage current ? ? 250 a v ge = 0v, v ce = 1200v, t j = 25c ? ? 1000 v ge = 0v, v ce = 1200v,t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 151 227 nc i c = 33a q ge gate-to-emitter charge (turn-on) ? 26 39 v ge = 15v q gc gate-to-collector charge (turn-on) ? 62 93 v cc = 600v e off turn-off switching loss ? 15 16 mj i c = 33a, v cc = 600v, v ge = 15v t d(off) turn-off delay time ? 485 616 ns r g = 5 ? , l = 400h, t j = 25c t f fall time ? 1193 1371 energy losses include tail e off turn-off switching loss ? 29 ? mj i c = 33a, v cc = 600v, v ge = 15v t d(off) turn-off delay time ? 689 ? ns r g = 5 ? , l = 400h, t j = 150c t f fall time ? 2462 ? energy losses include tail c ies input capacitance ? 3804 ? v ge = 0v c oes output capacitance ? 161 ? v cc = 30v c res reverse transfer capacitance ? 31 ? f = 1.0mhz rbsoa reverse bias safe operating area t j = 150c, i c = 99a full square v cc = 960v, vp 1200v rg = 5 ? , v ge = +20v to 0v pf notes: ? v cc = 80% (v ces ), v ge = 20v, l = 400h, r g = 5 ? . ? pulse width limited by max. junction temperature. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? r ? is measured at t j approximately 90c. ?? calculated continuous current based on maximum allowable ju nction temperature. bond wire current limit is 78a. note that current limitations aris ing from heating of the device leads may occur with some lead mounting arrangements
AUIRGDC0250 3 2018-03-01 25 50 75 100 125 150 t c (c) 0 20 40 60 80 100 120 140 160 i c ( a ) 25 50 75 100 125 150 t c (c) 0 100 200 300 400 500 600 p t o t ( w ) 1 10 100 1000 10000 v ce (v) 0.01 0.1 1 10 100 1000 i c ( a ) 10sec 100sec tc = 25c tj = 150c single pulse dc 1msec fig. 1 - maximum dc collector current vs. case temperature 25 50 75 100 125 150 t j , temperature (c) 3.0 3.5 4.0 4.5 5.0 v g e ( t h ) , g a t e t h r e s h o l d v o l t a g e ( n o r m a l i z e d ) i c = 1ma fig. 2 - power dissipation vs. case temperature 10 100 1000 10000 v ce (v) 1 10 100 1000 i c ( a ) fig. 5 - reverse bias soa t j = 150c; v ge = 20v fig. 3 - forward soa t c = 25c, t j ? 150c; v ge =15v 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v vge = 7.0v fig. 6 - typ. igbt output characteristics t j = -40c; tp = 20s fig. 4 - typical gate threshold voltage (normalized) vs. junction temperature
AUIRGDC0250 4 2018-03-01 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v vge = 7.0v 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v vge = 7.0v 51 01 52 0 v ge (v) 0 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 17a i ce = 33a i ce = 66a fig. 9 - typical v ce vs. v ge t j = -40c fig. 7 - typ. igbt output characteristics t j = 25c; tp =20s 51 01 52 0 v ge (v) 0 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 17a i ce = 33a i ce = 66a fig. 10 - typical v ce vs. v ge t j = 25c fig. 8 - typ. igbt output characteristics tj = 150c; tp = 20s 51 01 52 0 v ge (v) 0 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 17a i ce = 33a i ce = 66a fig. 11 - typical v ce vs. v ge t j = 150c 4567891011 v ge (v) 0 20 40 60 80 100 i c e ( a ) t j = 25c t j = 150c fig. 12 - typ. transfer characteristics vce = 50v; tp = 20s
AUIRGDC0250 5 2018-03-01 fig. 18 - typical gate charge vs. v ge i ce = 33a; l = 2.0mh 0 10203040506070 i c (a) 10 15 20 25 30 35 40 45 50 e n e r g y ( m j ) e off 0 20 40 60 80 i c (a) 100 1000 10000 s w i c h i n g t i m e ( n s ) td off t f 020406080100 rg ( ? ) 24 26 28 30 32 e n e r g y ( m j ) e off fig. 15 - typ. energy loss vs. r g t j = 150c; l = 400h; v ce = 600v, i ce = 33a; v ge = 15v fig. 13 - typ. energy loss vs. i c t j = 150c; l = 400h; v ce = 600v, r g = 5 ? ; v ge = 15v 0 20 40 60 80 100 r g ( ? ) 100 1000 10000 s w i c h i n g t i m e ( n s ) td off t f fig. 16 - typ. energy loss vs. r g t j = 150c; l = 400h; v ce = 600v, i ce = 33a; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 150c; l = 400h; v ce = 600v, r g = 5 ? ; v ge = 15v 0 100 200 300 400 500 600 v ce (v) 1 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres fig. 17 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 20406080100120140160 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v
AUIRGDC0250 6 2018-03-01 fig 19. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 ri (c/w) ? i (sec) ? 0.0015 0.000003 0.0365 0.000118 0.1356 0.001438 0.0554 0.006412
AUIRGDC0250 7 2018-03-01 fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - switching loss circuit fig.c.t.4 - bvces filter circuit fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.3 0 1k vcc dut l gate charge circuit l rg 80 v dut vcc + - rbsoa circuit l rg vcc dut / driver diode clamp / dut switching loss g force c sense 100k dut 0.0075f d1 22k e force c force e sense bvces filter -10 0 10 20 30 40 50 60 70 -100 0 100 200 300 400 500 600 700 -20246 i ce (a) v ce (v) time(s) 90% i ce 5% v ce 10% i ce eoff loss tf
AUIRGDC0250 8 2018-03-01 super-to-220 package outline dimensions are shown in millimeters (inches) super-to-220 part marking information
AUIRGDC0250 9 2018-03-01 ? highest passing voltage. qualification information qualification level automotive (per aec-q101) comments: this part number (s) passed automotive qualification. infineon?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level 3l? super to-220 n/a machine model class m4 ? (+/- 800v) aec-q101-002 human body model class h3a ? (+/- 6000v) aec-q101-001 charged device model class c5 ? (+/- 2000v) aec-q101-005 rohs compliant yes esd revision history date comments 9/2/2014 ? updated datasheet with ir corporate template. ? removed ic nominal current on page 1. ? updated package outline on page 9. ? updated typo on switch time test condition from "25c" to "150c" on page 2. 12/1/2014 ? updated bvdss test condition from "100ua" to "250ua" on page 2. ? updated vgeth test condition from "1ma" to "250ua" on page 2. ? updated vgeth temp coefficient test condition from "1ma" to "250ua" and spec from "-12mv/c" to "- 15mv/c"on page 2. 3/2/2015 ? removed i ces = 2ua @ v ce = 10v on page 2. 8/31/2017 ? changed datasheet with infineon logo - all pages ? corrected qual level from n/a to msl1 & added temp 245c -page 9. ? updated part marking on page 8. 03/01/2018 ? removed -mounting torque, 6-32 or m3 screw ?page1 ? corrected soldering temperature fo r 10 sec (through hole mounting)-page1 ? corrected moisture sensitivity level from ?msl1? to ?n/a?-page9
AUIRGDC0250 10 2018-03-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this do cument is exclusively intended for technically trained sta ff. it is the responsibility of customer?s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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