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july 2016 docid029525 rev 1 1 / 15 this is inf ormation on a product in full production. www.st.com STD5N60DM2 n - channel 600 v, 1.38 typ., 3.5 a mdmesh? dm2 power mosfet in a dpak package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d p tot STD5N60DM2 600 v 1.55 3.5 a 45 w ? fast - recovery body diode ? extremely low gate charge and input capacitance ? low on - resistance ? 100% avalanche tested ? extremely high dv/dt ruggedness ? zener - pro tected applications ? switching applications description this high voltage n - channel power mosfet is part of the mdmesh? dm2 fast recovery diode series. it offers very low recovery charge (q rr ) and time (t rr ) combined with low r ds(on) , rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies a nd zvs phase - shift converters. table 1: device summary order code marking package packing STD5N60DM2 5n60dm2 dpak tape and reel
contents STD5N60DM2 2 / 15 docid029525 rev 1 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package information ................................ ................................ ....... 9 4.1 dpak ( to - 252) type a package information ................................ ..... 9 4.2 dpak (to - 252) packing information ................................ ............... 12 5 revision history ................................ ................................ ............ 14
STD5N60DM2 electrical ratings docid029525 rev 1 3 / 15 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 30 v i d drain current (continuous) at t case = 25 c 3 .5 a drain current (continuous) at t case = 100 c 2 i dm (1) drain current (pulsed) 14 a p tot total dissipation at t case = 25 c 45 w dv/dt (2) peak diode recovery voltage slope 15 v/ns dv/dt (3) mosfet dv/dt ruggedness 40 t stg storage temperature range - 55 to 150 c t j operating junction temperature range notes: (1) pulse width is limited by safe operating area. (2) i sd 3.5 a, di/dt=400 a/s; v ds peak < v (br)dss , v dd = 480 v. (3) v ds 480 v. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 2.78 c/w r thj - pcb (1) thermal resistance junction - pcb 50 notes: (1) when mounted on a 1 - inch2 fr - 4, 2 oz copper board. table 4: avalanche characteristics symbol parameter value unit i ar (1) avalanche current, repetitive or not repetitive 1.7 a e as (2) single pulse avalanche energy 132 mj notes: (1) pulse width limited by t jmax . (2) starting t j = 25 c, i d = i ar , v dd = 50 v.
electrical characteristics STD5N60DM2 4 / 15 docid029525 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0 v, v ds = 600 v 1 a v gs = 0 v, v ds = 600 v, t case = 125 c (1) 100 i gss gate - body leakage current v ds = 0 v, v gs = 25 v 5 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 1.75 a 1 .38 1.55 notes: (1) defined by design, not subject to production test. table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 375 - pf c oss output capacitance - 13 - c rss r everse transfer capacitance - 0.3 - c oss eq. (1) equivalent output capacitance v ds = 0 to 480 v, v gs = 0 v - 21 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 a - 6.5 - q g total gate charge v dd = 480 v, i d = 3.5 a, v gs = 10 v (see figure 15: "test circuit for gate charge behavior" ) - 8.6 - nc q gs gate - source charge - 2 - q gd gate - drain charge - 5.2 - notes: (1) c oss eq. is defined as a constant equivalent capacitance giv ing the same charging time as c oss when v ds increases from 0 to 80% v dss . table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 300 v, i d = 1.75 a r g = 4.7 , v gs = 10 v (see figure 14: "test circuit for resistive load switching times" and figure 19: "switching time waveform" ) - 7.2 - ns t r rise time - 4.1 - t d(off) turn - off delay t ime - 17 - t f fall time - 19.8 -
STD5N60DM2 electrical characteristics docid029525 rev 1 5 / 15 table 8: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 3.5 a i sdm (1) source - drain current (pulsed) - 14 a v sd (2) forward on voltage v gs = 0 v, i sd = 3.5 a - 1.6 v t rr reverse recovery time i sd = 3.5 a, di/dt = 100 a/s, v dd = 60 v (see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 58 70 ns q rr reverse recovery charge - 109 nc i rrm reverse recovery current - 4 a t rr reverse recovery time i sd = 3.5 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c (see figure 16: "test circuit for inductiv e load switching and diode recovery times" ) - 109 ns q rr reverse recovery charge - 309 nc i rrm reverse recovery current - 5 a notes: (1) pulse width is limited by safe operating area. (2) pulse test: pulse duration = 300 s, duty cycle 1.5%.
electrical characteristics STD5N60DM2 6 / 15 docid029525 rev 1 2.2 e lectrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance k cg34360 c 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -5 10 -1 10 -2 10 0
STD5N60DM2 electrical characteristics docid029525 rev 1 7 / 15 figure 8 : capacitance variations figure 9 : output capacitance stored energy figure 10 : normalized gate threshold voltage vs temperature figure 11 : normalized o n - resistance vs temperature figure 1 2 : source - drain diode forward characteristics figure 13 : normalized v (br)dss vs temperature
test circuits STD5N60DM2 8 / 15 docid029525 rev 1 3 test circuits figure 14 : test circuit for resistive load switching times figure 15 : test circuit for gate charge behavior figure 16 : test circuit f or inductive load switching and diode recovery times figure 17 : unclamped inductive load test circuit figure 18 : unclamped inductive waveform figure 19 : switching time wav eform
STD5N60DM2 package information docid029525 rev 1 9 / 15 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environme ntal compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 dpak (to - 252) type a package information figure 20 : dpak (to - 252) type a package outline 0068772_a_21
package information STD5N60DM2 10 / 15 docid029525 rev 1 table 9: dpak (to - 252) type a mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 d1 4.95 5.10 5.25 e 6.40 6.60 e1 4.60 4.70 4.80 e 2.16 2.28 2.40 e1 4.40 4.60 h 9.35 10.10 l 1.00 1.50 (l1) 2.60 2.80 3.00 l2 0.65 0.80 0.95 l4 0.60 1.00 r 0.20 v2 0 8
STD5N60DM2 package information docid029525 rev 1 11 / 15 figure 21 : dpak ( to - 252) recommended footprint (dimensions are in mm)
package information STD5N60DM2 12 / 15 docid029525 rev 1 4.2 dpak (to - 252) packing information figure 22 : dpak (to - 252) tape outline
STD5N60DM2 package information docid029525 rev 1 13 / 15 fig ure 23 : dpak (to - 252) reel outline table 10: dpak (to - 252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r 40 t 0.25 0.35 w 15.7 16.3
revision history STD5N60DM2 14 / 15 docid029525 rev 1 5 revision history table 11: document revision history date revision changes 05 - jul - 2016 1 first release.
STD5N60DM2 docid029525 rev 1 15 / 15 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st p roducts before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of ord er acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liabil ity for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shal l void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously sup plied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved

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