MCM1208 p-channel power mosfet features ? epoxy meets ul 94 v-0 flammability rating maximum r atings @ 25 o c u nless othe rwise specified symbol parameter rating unit v ds drain-source voltage -12 v i d drain curren t-con tinu ous -8 a i d m pulsed drain current (note1) -28 a v gs gate-source voltage 8 v r j a thermal resistance junction to ambient(note1) 357 /w t j operating junction temperature -55 to +150 t stg storage temperature -55 to +150 revision: a 2016/02/03 moisture sensitivity level 1 inches mm dim mi nmax mi nmax note dfn2020-6j ? advanced trench mosfet process technology ? ultra low on-resistance with low gate charge ? h alogen free available upon request by adding suffix "-hf" (1).repetitive rating:pluse width limited by junction temperature a 0.700 0.800 0.028 .032 b 0.203ref. 0.008ref. c 0.000 0.050 0000 0.002 d 1.924 2.076 0.076 0.082 e 1.924 2.076 0.076 0.082 f 0.800 1.000 0.031 0.039 g 0.850 1.050 0.033 0.041 h 0.200 0.400 0.008 0.016 j 0.200 --- 0.008 --- k 0.460 0.660 0.018 0.026 l 0.650typ. 0.026typ. m 0.250 0.350 0.010 0.014 n 0.174 0326 0.007 0.013 dimensions micro commercial components m c c r omponents 20736 marilla street chatsworth
www. mccsemi .com 1 of 4 equivalent circuit b d e f g h j c a k l m n m arking:1208 1.drain 2.drain 3.gate 4.source 5.drain 6.drain
revision: a 2016/02/03 electrical characteristics(t a =25 unless otherwise specified) micro commercial components m c c r www. mccsemi .com 2 of 4 parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -12 v z e ro gate voltage drain current i dss v ds = -12v,v gs = 0 v -1 a gate-body leakage current i gss v gs =8v, v ds = 0v 0.10.1 gate threshol d voltage (note 1) gs(th) v v ds =v gs , i d = - 250a -0.4 -1 v v gs =-4.5v, i d =-5a 28 v gs = -3.7v, i d = - 4.6a 32 v gs =-2.5v, i d =-4.3a 40 v gs = -1.8v, i d =-1 a 63 drain-source on-resistance (note 1) ds(o r n) v gs =-1.5v, i d =-0.5a 150 m? f o r ward tranconductance (note 1) fs g v ds =-5v, i d =- 5 a 18 s dynamic characteristics (note 2) input cap a citance c iss 127 5 pf output capacitance c oss 255 pf revers e t r ansfer capacitance c rss v ds =-6v,v gs =0v,f =1mhz 236 pf gate resistance r g f =1mhz 1.9 19 ? t o tal gate charge q g 141 4 21 nc gate-source charge q gs 2.3 nc gate-drain charge q gd v ds =-6v,v gs =-4.5v,i d =-5a 3.6 nc turn-on delay time t d(on) 262 6 40 ns t u rn-on rise time t r 4 40 242 ns turn-off delay time t d(off) 5 70 454 ns t u rn-off fall time t f v dd =-6v,v gen =-4.5v,i d =-4a r l =6 ? ,r gen =1 ? 202 0 35 ns source-drain diode characteristics diod e for ward current i s -8 a diode pulsed forward current i sm -28 a diod e f orward voltage (note 1) v ds gs v =0 v, i s =-4 a -1.2 v diode reverse recovery time (note 2) t rr 242 4 48 ns diod e revers e recovery charge (note 2) q rr i f =-4a , di/dt=100a/ s 88 16 nc no tes : 1. pulse test; pulse width 300 s, duty cycle 2%. ua
m c c r revision: a 2016/02/03 www. mccsemi .com 3 of 4 v sd i s ? ? ? ? ? ? out put ch aracteristics ?? i d r ds(on) ?? v gs r ds(on) micro commercial components threshold voltage 7 \ s l f d o & |