t4 - lds -03 17 , rev . 1 (9 /13/13 ) ?201 3 microsemi corporation page 1 of 7 2n6 648 C 2n6 650 available on commercial versions pnp darlington power silicon transistor qualified per mil - prf - 19500/527 qualified levels : jan, jantx, and jantxv description this high speed pn p tran sistor is rated at -10 amps and is military qualified up to the jantxv level. this to - 204aa isolated package features a 180 degree lead orientation. to - 204a a (to- 3) package important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n6 648 through 2n6 650 ? jan, jantx, and jantxv qualification s are available per mil - prf - 19500/ 5 27 ? rohs compliant versions available (commercial grade only) applications / ben efits ? m ilitary and othe r high reliability applications ? high frequency response ? to - 204aa case with i solated terminals m axim um ratings @ t a = +25 o c unless otherwise noted msc C law rence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 68222 98 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j and t stg -6 5 to + 175 o c thermal resistance junction - to - case r ? jc 1.7 6 o c /w collector - emitter voltage 2n6 648 2n6 649 2n6 650 v ceo - 40 - 60 - 80 v collector - base voltage 2n6648 2n6649 2n6650 v cbo - 40 - 60 - 80 v emitter - base voltage v ebo -5 v total power dissipation @ t a = +25 o c (1) @ t c = + 25 o c (2) p t 5 .0 85 w base current i b - 0.25 a collector current i c - 10 a notes : 1. derate linearly 3 3.3 m w/ o c above t a > +25 o c. 2. derate linearly 5 67 m w/ o c above t c > + 25 o c. downloaded from: http:///
t4 - lds -03 17 , rev . 1 (9 /13/13 ) ?201 3 microsemi corporation page 2 of 7 2n6 648 C 2n6 650 mechanical and packaging ? case: industry standard to - 204a a (to -3 ), hermetically sealed, 0.0 40 inch diameter pins ? finish: solder dipped tin - lead over nickel plated alloy 52 or rohs compliant matte - tin plating. solderable per mil - std - 750 method 2026. ? polarity: pn p (see schematic ) ? mount ing hardware: consult factory for optional insulator and sheet metal screws ? w eight: approximately 15 grams ? see p ackage d imensions on last page. part nomenclatu re jan 2n 6 648 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number (s ee electrical characteristics t able ) rohs compliance e3 = rohs co mpliant ( available on commercial grade only ) blank = non - rohs compliant symbols & definitions symbol definition i b base current: the value of the dc current in to the base terminal. i c collector current: the value of the dc current in to the collector terminal. i e emitter current: the value of the dc current into the emitter terminal. t c case temperature: the temperature measured at a specified location on the case of a device. v cb collector - base voltage: the dc voltage between the collector and the base. v cb o collector - base voltage, base open : the voltage between the collector and base terminals when the emitter terminal is open - circuited . v cc collector - supply voltage: the supply voltage applied to a circuit connected to the collector. v ce o collector - emitter voltage, base open : the voltage between the collector and the emitte r terminals when the base t erminal is open - circuited. v ce collector - emitter voltage: the dc voltage between the collector and the emitter. v eb emitter - base voltage: the dc voltage between the emitter and the base . v ebo emitter - base voltage, collector open : the voltage between the emitter and base terminals with the collector terminal open - circuited. downloaded from: http:///
t4 - lds -03 17 , rev . 1 (9 /13/13 ) ?201 3 microsemi corporation page 3 of 7 2n6 648 C 2n6 650 electrical characteristics @ t a = + 25 o c unless otherwise noted characteristics symbol min. max. unit of f charact eristics collector - emitter breakdown voltage i c = - 200 ma 2n6 648 2n6 649 2n6 650 v (br)ceo - 40 - 60 - 80 v collector - emitter breakdown voltage i c = -2 00 ma , r bb = 100 ? 2n6 648 2n6 649 2n6 650 v (br)cer - 40 - 60 - 80 v collector - emitter cutoff current v ce = - 40 v v ce = -6 0 v v ce = -8 0 v 2n6 648 2n6 649 2n6 650 i ceo - 1.0 ma collector - emitter cutoff current v ce = -4 0 v, v be = 1.5 v v ce = -6 0 v, v be = 1.5 v v ce = -8 0 v, v be = 1.5 v 2n6 648 2n6 649 2n6 650 i cex 10 a emitter - base cutoff current v eb = 5 .0 v i ebo - 10 ma collector - emitter cutoff current v ce = - 40 v v ce = -6 0 v v ce = -8 0 v 2n6 648 2n6 649 2n6 650 i cbo - 1.0 ma on characteristics forward - current transfer ratio i c = -1 .0 a, v ce = -3 .0 v i c = - 5 a, v ce = -3 .0 v i c = -10 a, v ce = -3 .0 v i c = - 5 a, v ce = - 3.0 v , t a = - 65 oc h fe 300 1 ,0 00 100 200 20 ,000 collector - emitter saturation voltage i c = - 5.0 a, i b = -1 0 ma i c = -1 0 a, i b = - 0.1 ma v ce(sat) -2 .0 -3 .0 v base - emitter voltage non - saturated v ce = - 3.0 v, i c = - 5.0 a v ce = - 3.0 v, i c = - 10 a v be (on) - 2.8 - 4.5 v dynami c characteristics magnitude of commo n emitte r small - signal short - circuit forward current transfer ratio i c = - 1.0 a, v ce = -5.0 v, f = 1.0 mh z |h fe | 30 4 00 output capacitance v cb = -10 v, i e = 0, 1 00 k hz f 1 mhz c obo 3 00 pf downloaded from: http:///
t4 - lds -03 17 , rev . 1 (9 /13/13 ) ?201 3 microsemi corporation page 4 of 7 2n6 648 C 2n6 650 electrical characteristics @ t c = 25 o c unless otherwise noted. (continued) switchin g characteristics turn - on time v cc = - 30 v, i c = - 5.0 a; i b = -20 ma t on 2. 5 s turn - off time v cc = - 30 v, i c = - 5.0 a; i b1 = i b2 = -2 0 ma t off 10 s saf e operatin g area (see f igure s 1 and 2 and mil - std - 750,test method 3053 ) dc tests t c = +25 c , t = 1 second , 1 cycle test 1 v ce = - 8.5 v, i c = -10 a test 2 v ce = - 25 v, i c = - 3.4 a test 3 v ce = -4 0 v, i c = - 0.9 a (2n6 648 ) v ce = -6 0 v, i c = - 0.3 a (2n6 649 ) v ce = -8 0 v, i c = - 0.14 a (2n6 650 ) downloaded from: http:///
t4 - lds -03 17 , rev . 1 (9 /13/13 ) ?201 3 microsemi corporation page 5 of 7 2n6 648 C 2n6 650 safe operating area v ce C collector to emitter voltage (volts) figure 1 maximum safe operating graph (continuous dc) l C inductance (millihenries) figure 2 safe o perating a rea for s witching b etween s aturation and cu toff (unclamped inductive load) i c = collector current (amperes) i c = collector current (amperes) downloaded from: http:///
t4 - lds -03 17 , rev . 1 (9 /13/13 ) ?201 3 microsemi corporation page 6 of 7 2n6 648 C 2n6 650 package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for information only. 3. these dimensions should be measured at points 0 .050 inch (1.27 mm) and 0 .055 inch ( 1.40 mm) below seating plane. when gauge is not used measurement will be made at the seating plane. 4. the seating plane of the header shall be flat within 0 .001 inch (0.03 mm) concave to 0 .004 inch (0.10 mm) convex inside a 0 .930 inch (23.62 mm) diameter circle on the center of the header and flat within 0 .001 inch (0.03 mm) concave to 0 .006 inch (0.15 mm) convex overall. 5. mounting holes shall be deburred on the seating plane side. 6. collector is electrically connected to the case. 7. in accordance wi th amse y14.5m, diameters are equivalent to x symbology. see schematic on next page dimensions ltr inches millimeters notes min max min max cd - 0.875 - 22.23 ch 0.250 0. 4 50 6.35 1 1.43 hr 0.495 0.525 12.57 13.34 hr1 0.131 0.188 3.33 4.78 ht 0.0 50 0.135 1.52 3.43 ld 0.038 0.043 0.97 1.09 ll 0.312 0.500 7.92 12.70 ll1 - 0.050 - 1.27 mhd 0.151 0.161 3.84 4.09 mhs 1.177 1.197 29.90 30.40 ps 0.420 0.440 10.67 11.18 3 ps1 0.205 0.225 5.21 5.72 3 s1 0.655 0.675 16.6 4 17.15 downloaded from: http:///
t4 - lds -03 17 , rev . 1 (9 /13/13 ) ?201 3 microsemi corporation page 7 of 7 2n6 648 C 2n6 650 schematic downloaded from: http:///
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