c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . winsemi microelectronics winsemi microelectronics winsemi microelectronics winsemi microelectronics winsemi microelectronics w gp15g65 product description wt - g003 - rev.a 0 nov .2013 1113 absolute m a ximum r ating s symbol parameter value unit v ge gate - emitter voltage 40 v i c collector current (continuo u s) at t c = 25c 30 a collector current (continuo u s) at t c = 100c 1 5 a i cm (1) collector current (pulsed) 45 a e as single pulse energy t c = 25c 500 mj p tot total dissipation at t c = 25c 150 w e sd esd (human body model) 3 kv tstg storage temperature - 55 to 150 tj max. operating junction temperature (1) pulse width limited by safe operating area thermal c haracteristics sym bol parameter v a l ue unit min t y p max r qjc ther m al resistance , junction - to - case - - 0.75 /w r qja ther m al resistance , junction - to - ambient - - 62.5 /w electrical characteristics (t case = 25 c unless otherwise specified) symbol parameter test conditions min typ max unit bv (ces) clamped voltage i c =1ma,v ge =0,t c =25c 6 5 0 - - v bv (ecr) emitter collector break - down voltage i c = 75 ma, t c = 25c 20 30 - v i ces collector cut - off current (v ge =0) v ce =620v, v ge =0 ,t c =25c - 5 - u a i ges gat e - emitter leakage current (v ce =0) v ge =10v,v ce = 0 - 100 - u a v ge(th) gate threshold voltage v ce =v ge , i c = 250a, t c = - 50c 2 3.18 4 v v ce =v ge , i c = 250a, t c = 25c 1.8 3.05 3.5 v v ce =v ge , i c = 250a, t c =150c 1.5 2.11 3 v v ce(sat) co llector - emitter saturation voltage v ge =5.5v, i c = 5 a, t c = 25c - 1.03 1.2 v v ge =5.5v, i c = 5a, t c = 150c - 0.92 1.2 v v ge =5.5v, i c = 10 a, t c = 25c - 1.5 1.7 v v ge =5.5v, i c = 10 a, t c = 150c - 1.32 1.5 v symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ce =25v , i c =10 a 25 30 - s c ies input capacitance v ce =25v, f= 1mhz, v ge =0 - 1196 - pf c oes output capacitance - 211 - pf c res reverse transfer capacitance - 3.3 - pf q g gate charge v ce = 280v, i c =10 a, v ge =5v - 21.4 - nc symbol parameter test conditions min. typ. max. unit
www.winsemi.com tel : 0755 - 82506288 fax : 0755 - 82506299 2 / 6 w gp15g65 product description winsemi microelectronics winsemi microelectronics winsemi microelectronics winsemi microelectronics winsemi microelectronics t r (voff) off voltage rise time v cc = 250v, i c =10 a, r ge =1k ,v ge = 5.5v - 1.84 3 s t d (off) delay time - 2.58 4 s t f f all time - 3.32 5 s e off (**) turn - off switching loss - 7.72 11 mj t r (v off ) off voltage rise time v cc = 250v, i c =10a, r ge =1k ,v ge = 5.5v ,tj = 125 c - 2.5 4 s t d ( off ) delay time - 1 2 s t f fall time - 4.54 6 s e off (**) t urn - off switching loss - 8.63 15 mj
www.winsemi.com tel : 0755 - 82506288 fax : 0755 - 82506299 3 / 6 w gp15g65 product description winsemi microelectronics winsemi microelectronics winsemi microelectronics winsemi microelectronics winsemi microelectronics 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 vce(v) ic(a) vce @vgs=2.0v vce @vgs=3.0v vce @vgs=4.0v vce @vgs=5.0v vce @vgs=6.0v vce @vgs=7.0v vce @vgs=8.0v vce @vgs=10.0v 0 5 10 15 20 25 30 35 0 1 2 3 4 5 6 7 vge(v) ic(a) ic @temp=-40.0c ic @temp=25.0c ic @temp=125.0c output characteristics transfer characteristics 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 -75 -25 25 75 125 175 vge(th) tj( 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 10 20 30 40 50 60 70 vds(v0 c ( n f ) ciss (nf) coss (nf) crss (nf) normalized gate threshold voltage vs temp. capacitance variations vce=280v,ic=10 0 1 2 3 4 5 6 7 8 9 0 5 10 15 20 25 qg nc) vge(v) gate charge vs gate - emitter voltage
www.winsemi.com tel : 0755 - 82506288 fax : 0755 - 82506299 4 / 6 w gp15g65 product description winsemi microelectronics winsemi microelectronics winsemi microelectronics winsemi microelectronics winsemi microelectronics switching off
www.winsemi.com tel : 0755 - 82506288 fax : 0755 - 82506299 5 / 6 w gp15g65 product description winsemi microelectronics winsemi microelectronics winsemi microelectronics winsemi microelectronics winsemi microelectronics t o - 220c package d imension e q 7 a q 1 p e c l l 2 d 2 d b e b f min max a 4.30 4.70 b 1.10 1.40 b 0.70 0.95 c 0.40 0.65 d 15.2 16.2 d2 9.00 9.40 e 9.70 10.10 e 2.39 2.69 f 1.25 1.40 l 12.60 13.60 l2 2.80 3.20 q 2.60 3.00 q1 2.20 2.60 p 3.50 3.80 unit:mm
www.winsemi.com tel : 0755 - 82506288 fax : 0755 - 82506299 6 / 6 w gp15g65 product description winsemi microelectronics winsemi microelectronics winsemi microelectronics winsemi microelectronics winsemi microelectronics note: 1. we strongly recommend customers check carefully on the trademark when buying our product, if there i s any question, please don't be hesitate to contact us. 2. please do not exceed the absolute maximum ratings of the device when circu it designing. 3. winsemi microelectronics co., ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. contact: winsemi microelectronics co., ltd. add:futian district, shenzhen tian an cyber tech pl aza two east wing 1002 post code : 518040 tel : 86 - 0755 - 82506257 fax : 86 - 0755 - 82506299 web site : www.winsemi.com
|
