2012. 6. 7 1/4 semiconductor technical data KMB010P30QA p-ch trench mosfet revision no : 2 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. it is mainlysuitable for battery pack. features h v dss =-30v, i d =-10a. h drain-source on resistance. r ds(on) =20m ? (max.) @ v gs =-10v r ds(on) =28m ? (max.) @ v gs =-4.5v h super high dense cell design mosfet maximum ratings (ta=25 ? unless otherwise noted) flp-8 0.20+0.1/-0.05 p t 1.27 u 0.1 max millimeters 0.4 0.1 0.15+0.1/-0.05 4.85 0.2 b2 gh l d a b1 dim 6.02 0.31.63 0.2 0.65 0.2 3.94 0.2 + _ + _ + _ + _ + _ + _ g h b1 b2 1 4 5 8 a p d l t u note : *surface mounted on fr4 board 12 3 4 87 6 5 ss s g dd d d 12 3 4 87 6 5 characteristic symbol rating unit drain source voltage v dss -30 v gate source voltage v gss ? 20 v drain current dc i d * -10 a pulsed i dp -80 a drain source diode forward current i s -1.7 a drain power dissipation p d * 2.0 w maximum junction temperature t j 150 ? storage temperature range t stg -55~150 ? thermal resistance, junction to ambient r thja * 62.5 ? /w 709 kmb010p 30qa pin connection (top view) downloaded from: http:///
2012. 6. 7 2/4 KMB010P30QA revision no : 2 electrical characteristics (ta=25 ? ) unless otherwise noted characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss v gs =0v, i ds =-250 a -30 - - v drain cut-off current i dss v ds =-24v, v gs =0v - - -1 a gate leakage current i gss v gs = ? 25v, v ds =0v - - ? 100 na gate threshold voltage v th v ds =v gs, i d =-250 a -1.3 -1.9 -2.5 v drain-source on resistance r ds(on)* v gs =-10v, i d =-10a - 12 20 m ? v gs =-4.5v, i d =-8a - 20 28 on-state drain current i d(on)* v ds =-5v, v gs =-10v -30 - - a forward transconductance g fs* v ds =-15v, i d =-10a - 14 - s dynamic input capaclitance c iss v ds =-15v, v gs =0v, f=1mhz - 2530 - pf ouput capacitance c oss - 635 - reverse transfer capacitance c rss - 445 - total gate charge q g* v ds =-15v, v gs =-10v, i d =-10a - 44.6 - nc gate-source charge q gs* - 7.7 - gate-drain charge q gd* - 11.5 - turn-on delay time t d(on)* v dd =-15v, v gs =-10v r l =1.25 ? , r g =6 ? - 10.2 - ns turn-on rise time t r* - 6.3 - turn-off delay time t d(off)* - 22.5 - turn-off fall time t f* - 10.6 - source-drain diode ratings source-drain forward voltage v sdf* v gs =0v, i dr =-1.7a, - -0.73 -1.2 v note1. pulse test : pulse width ? 10 k , duty cycle ? 1% downloaded from: http:///
2012. 6. 7 3/4 KMB010P30QA revision no : 2 drain-source volatage v ds (v) 700 0 0 1400 2100 2800 3500 4200 51 0 2 0 3 0 15 25 on-resistance r ds(on) (ohms) 0.6 0.8 1.2 1.81.6 1.0 1.4 01 2 5 75 100 50 -25 25 -55 v gs =-20v i d =-10a junction temperature tj ( ) c ciss crss -50 -25 25 50 125 75 100 0 0.6 0.7 0.8 0.9 1.31.0 1.1 1.2 junction temperature tj ( ) c v gs =v ds i d =-250 a normalized gate source threshold voltage v th 0 0 0.5 5 10 15 20 25 11 . 52 3 2.5 fig2. i d - v gs drain current i d (a) gate - source voltage v gs (v) capacitance (pf) fig3. c - v ds fig4. r ds(on) - t j fig5. v th - t j 25 c 125 c -55 c coss 0.6 0.4 1 0.9 0.7 1.3 1.1 2010 v gs =0v fig 6. i dr - v sdf reverse source-drain current i dr (a) source-drain forword voltage v sdf (v) 0 0 2 20 40 60 80 100 468 1 2 10 v gs =4.0v v gs =3.0v v gs =4.5, 5, 7, 10v fig1. i d - v ds drain current i d (a) drain - source voltage v ds (v) downloaded from: http:///
2012. 6. 7 4/4 KMB010P30QA revision no : 2 16 8 0 0 48 32 64 40 24 56 10 86 4 2 fig7. v gs - q g gate to source voltage v gs (v) total gate charge q g (nc) v ds =-15v i d =-10a square wave pulse duration (sec) 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 -4 fig9. transient thermal response curve t 1 t 2 p dm 1. duty cycle, d = 2. per unit base = r ja = 62.5 c/w t 1 t 2 0.02 0.1 0.2 duty cycle = 0.5 0.05 single pluse 10 -2 10 -1 10 0 normalized transient thermal resistance drain current i d (a) drain - source voltage v ds (v) fig8. safe operation area 10 1 10 1 10 2 10 3 10 -1 10 -2 10 -1 10 0 10 0 10 2 v gs = 10v single pulse 1ms 10ms 10s 100ms 1s dc operation in this area is limited by r ds(on) downloaded from: http:///
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