a,nov,2010 sot-89-3l 1. base 2. collector 3. emitter jiangsu changjiang electron ics technology co., ltd sot-89-3l plastic-encapsulate transistors BST52 transistor (npn) features z low voltage z high current z integrated diode and resistor applications z industrial switching applications: print hammer, solenoid, relay and lamp driving marking:as3 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100a,i e =0 90 v collector-emitter sustain voltage v ces v be =0,i c =100a 80 v collector cut-off current i ces v be =0, v ce =80v 50 na emitter cut-off current i ebo v eb =4v,i c =0 50 na v ce =10v, i c =150ma 1000 dc current gain h fe v ce =10v, i c =500ma 2000 collector-emitter saturation voltage v ce(sat) i c =500ma,i b =0.5ma 1.3 v base-emitter saturation voltage v be(sat) i c =500ma,i b =0.5ma 1.9 v transition frequency f t v ce =5v,i c =500ma, f=100mhz 200 mhz symbol parameter value unit v cbo collector-base voltage 90 v v ceo collector-emitter voltage 80 v i c collector current 500 ma p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150
|
