-zstmi-donduckoi zpioaueti, {jnc, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 the rf mosfet line rf power field effect transistor n-channel enhancement-mode designed for broadband commercial and industrial applications at frequen- cies to 520 mhz. the high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 12.5 volt mobile, and base station fm equipment. ? guaranteed performance at 512 mhz, 12.5 volts output power ? 15 watts power gain ? 10 db min efficiency ? 50% min ? characterized with series equivalent large-signal impedance parameters ? s-parameter characterization at high bias levels ? excellent thermal stability ? all gold metal for ultra reliability ? capable of handling 20:1 vswr, @ 15.5 vdc, 512 mhz, 2 db overdrive ? circuit board photomaster available upon request by contacting rf tactical marketing in phoenix, az. MRF5015 15 w, 512 mhz, 12.5 volts n-channel broadband rf power fet maximum ratings case 319-07, style 3 rating drain-source voltage drain-gate voltage (rgs = 1 mj) gate-source voltage drain current ? continuous total device dissipation @ tc = 25c derate above 25c storage temperature range operating junction temperature symbol vdss vdgr vgs id pd tstg tj value 36 36 20 6 50 0.29 -65 to +150 200 unit vdc vdc vdc adc watts w/c c c thermal characteristics characteristic thermal resistance, junction to case symbol r9jc max 3.5 unit c/w electrical characteristics = 25c unless otherwise noted.) characteristic symbol min typ max unit off characteristics drain-source breakdown voltage (v<3s = 0, iq = 5 madc) zero gate voltage drain current (vos = 15 vdc, vqs = 0) gate-source leakage current (vqq = 20 vdc, vqs = 0) v(br)dss toss igss 36 ? ? ? ? ? ? 5 2 vdc madc nadc (continued) oilrtlifv
electrical characteristics ? continued (tc = 25c unless otherwise noted.) characteristic symbol min typ max unit on characteristics gate threshold voltage (vds = 10 vdc, id = 10 madc) drain-source on-voltage (vqs = 10 vdc, id = 1 adc) forward transconductance (vds = 10vdc, id = 1 adc) vgs(th) vds(on) 9fs 1.25 ? 1.2 2.3 ? ? 3.5 0.375 ? vdc vdc s dynamic characteristics input capacitance (vds = 12.5 vdc, vgs = o, f = 1 mhz) output capacitance (vds = 12.5 vdc, vgs = o, f = 1 mhz) reverse transfer capacitance (vds = 12.5 vdc, vgs = o, f = 1 mhz) cjss cqss crss ? ? 7 33 74 8.8 ? ? 10.8 pf pf pf functional tests (in motorola test fixture) common-source amplifier power gain (vdd = 12.5 vdc, pout = 15 w, f = 512 mhz ldq= 100ma) f= 175 mhz drain efficiency (vdd = 12-5 vdc, pout = 15 w, f = 512 mhz idq= 100ma) f= 175 mhz load mismatch (vdd = 15.5 vdc, 2 db overdrive, f = 512 mhz, load vswr = 20:1 , all phase angles at frequency of test) gps t| v 10 50 11.5 15 55 55 ? ? db % no degradation in output power b1.b2 c1.c13 c2, c12 c3,c4,c10,011 c5, c9 c6 c7 c8 l1, l2 n1, n2 r1 r2 ferrite bead, fair rite products 10uf, 50v, electrolytic 0.1 nf, chip capacitor 120 pf, chip capacitor 0 to 20 pf, trimmer capacitor 36 pf, chip capacitor 43 pf, chip capacitor 30 pf, chip capacitor 7 turns, 24 awg 0.116" id type n flange mount 1 kn, 1/4w, carbon 470 kq, 1/4w, carbon r3 160 ii, 0.1 w chip z1, z11 transmission line* 22 transmission line* z3 transmission line* z4 transmission line* z5 transmission line* z6 transmission line* 27, z8 transmission line+ 29 transmission line* 210 transmission line* board glass teflon? 0.060" + part of capacitor mount socket *see photomaster figure 1. 512 mhz narrowband test circuit electrical schematic
|
