2008. 8. 29 1/2 semiconductor technical data kta2015 epitaxial planar pnp transistor revision no : 2 general purpose application. switching application. features h excellent h fe linearity : h fe (2)=25(min.) at v ce =-6v, i c =-400ma. h complementary to ktc4076. maximum rating (ta=25 ? ) dim millimeters a b d e usm 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 c g h j k l k 1 3 2 e b d a j g c l h mm n n m 0.42 0.10 n 0.10 min p0.1 max + _ + _ + _ + _ + _ p 1. emitter 2. base 3. collector electrical characteristics (ta=25 ? ) (note) : h fe (1) classification o(2):70 q 140 y(4):120 q 240 h fe (2) classification o:25min. y:40min. h rank fe type name marking lot no. z characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-35v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 a dc current gain (note) h fe (1) v ce =-1v, i c =-100ma 70 - 240 h fe (2) v ce =-6v, i c =-400ma 25 - - collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma - -0.1 -0.25 v base-emitter voltage v be v ce =-1v, i c =-100ma - -0.8 -1.0 v transition frequency f t v ce =-6v, i c =-20ma - 200 - mhz collector output capacitance c ob v cb =-6v, i e =0, f=1mhz - 13 - pf characteristic symbol rating unit collector-base voltage v cbo -35 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v collector current i c -500 ma base current i b -50 ma collector power dissipation p c 100 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ?
2008. 8. 29 2/2 kta2015 revision no : 2
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