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FW905 rev.0 i page 1 of 6 i www.onsemi.com features composite type with an n-channel mosfet and a p-channel mosfet driving from a 2.5v supply voltage contained in a single package. high-density mounting. specifications absolute maximum ratings at ta=25 c parameter symbol conditions n-channel p-channel unit drain-to-source voltage v dss 20 --20 v gate-to-source voltage v gss 10 10 v drain current (dc) i d 7--6 a drain current (pw 10 s) i dp duty cycle 1% 52 --52 a allowable power dissipation p d mounted on a ceramic board 2.3 w (1500mm 2 ? 0.8mm)1unit, pw 10s t otal dissipation p t mounted on a ceramic board 2.5 w (1500mm 2 ? 0.8mm), pw 10s channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [n-channel] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 20 v zero-gate voltage drain current i dss v ds =20v, v gs =0v 1 a gate-to-source leakage current i gss v gs = 8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.5 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =7a 9 15 s r ds (on)1 i d =7a, v gs =4v 18 24 m ? static drain-to-source on-state resistance r ds (on)2 i d =3a, v gs =2.5v 20 33 m ? input capacitance ciss v ds =10v, f=1mhz 1530 pf output capacitance coss v ds =10v, f=1mhz 230 pf reverse transfer capacitance crss v ds =10v, f=1mhz 215 pf marking : w905 continued on next page. ordering number : en8754 FW905 n-channel and p-channel silicon mosfets general-purpose switching device applications ? 2011, scillc. all rights reserved. jan-2011, rev. 0 www.onsemi.com publication order number: FW905/d
FW905 rev.0 i page 2 of 6 i www.onsemi.com continued from preceding page. ratings parameter symbol conditions min typ max unit t urn-on delay time t d (on) see specified test circuit. 19 ns rise time t r see specified test circuit. 225 ns t urn-off delay time t d (off) see specified test circuit. 125 ns fall time t f see specified test circuit. 125 ns t otal gate charge qg v ds =10v, v gs =4v, i d =7a 18.5 nc gate-to-source charge qgs v ds =10v, v gs =4v, i d =7a 3.4 nc gate-to-drain ?iller?charge qgd v ds =10v, v gs =4v, i d =7a 4.8 nc diode forward voltage v sd i s =7a, v gs =0v 0.79 1.2 v [p-channel] drain-to-source breakdown voltage v (br)dss i d =- -1ma, v gs =0v --20 v zero-gate voltage drain current i dss v ds =--20v, v gs =0v --1 a gate-to-source leakage current i gss v gs = 8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --0.4 --1.4 v forward transfer admittance ? yfs ? v ds =--10v, i d =- -6a 7.8 13 s r ds (on)1 i d =- -6a, v gs =- -4v 30 40 m ? static drain-to-source on-state resistance r ds (on)2 i d =- -3a, v gs =- -2.5v 42 59 m ? input capacitance ciss v ds =--10v, f=1mhz 1720 pf output capacitance coss v ds =--10v, f=1mhz 260 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 245 pf t urn-on delay time t d (on) see specified test circuit. 19 ns rise time t r see specified test circuit. 390 ns t urn-off delay time t d (off) see specified test circuit. 110 ns fall time t f see specified test circuit. 145 ns t otal gate charge qg v ds =--10v, v gs =- -4v, i d =--6a 18.4 nc gate-to-source charge qgs v ds =--10v, v gs =- -4v, i d =--6a 3.2 nc gate-to-drain ?iller?charge qgd v ds =--10v, v gs =- -4v, i d =--6a 5.2 nc diode forward voltage v sd i s =--6a, v gs =0v --0.82 --1.2 v package dimensions electrical connection unit : mm 7005-003 14 5 8 5.0 4.4 6.0 0.3 1.5 1.8 max 0.1 0.595 1.27 0.2 0.43 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : sop8 8765 1234 t op view 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1
FW905 rev.0 i page 3 of 6 i www.onsemi.com switching time test circuit [n-channel] [p-channel] pw=10 s d.c. 1% p. g 50 ? g s d i d =5a r l =2 ? v dd =10v v out FW905 v in 4.5v 0v v in pw=10 s d.c. 1% p. g 50 ? g s d i d = --6a r l =1.67 ? v dd = --10v v out FW905 v in 0v - -4v v in drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a [pch] [pch] [nch] [nch] i d -- v ds i d -- v gs i d -- v ds i d -- v gs 0 0.05 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 0 1 2 3 6 5 4 8 7 0.4 0.3 0.35 0.15 0.2 0.25 it05892 0 0.2 0.4 0.8 0.6 1.0 1.2 1.4 1.6 1.8 it05893 v gs =1.5v 2.0 v 2 .5v 3.0v 4.5v ta=75 c - -25 c v ds =10v 25 c 4 .0v -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 0 0 -- 1 -- 2 -- 3 -- 5 -- 6 - -0.2 -- 4 0 - -0.4 --0.6 --0.8 --1.0 - -0.1 --0.3 --0.5 --0.7 --0.9 v gs = --1.0v - -1.5v - -2.0v - -2.5v - -8.0v it09896 0- -0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 v ds = --10v 25 c - -25 c t a=75 c it09897 - -4.0v - -5.0v - -6.0v
FW905 rev.0 i page 4 of 6 i www.onsemi.com drain current, i d -- a forward transfer admittance, ? y fs ? -- s drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v source current, i s -- a diode forward voltage, v sd -- v source current, i s -- a ? y fs ? -- i d i s -- v sd i s -- v sd ? y fs ? -- i d static drain-to-source on-state resistance, r ds (on) -- m ? static drain-to-source on-state resistance, r ds (on) -- m ? gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m ? static drain-to-source on-state resistance, r ds (on) -- m ? gate-to-source voltage, v gs -- v ambient temperature, ta -- c ambient temperature, ta -- c r ds (on) -- v gs r ds (on) -- ta r ds (on) -- v gs r ds (on) -- ta 02468 20 25 30 35 40 45 50 0 5 10 15 10 12 it05894 it09899 -- 7 5 -- 5 0 -- 2 5 0 2 55075 100 125 150 175 0 5 10 30 25 20 15 50 45 40 35 t a=25 c 6a i d =3a i d =6a, v gs =4.0v i d =3a, v gs =2.5v [nch] [nch] -- 6 0 -- 4 0 -- 2 0 0 2 0 4 06080100 120 140 160 -- 0 -- 1 -- 2 -- 3 -- 4 -- 6 -- 7 -- 5 -- 8 it09898 20 30 10 40 50 60 70 80 90 100 0 it09900 10 20 30 40 50 60 70 80 90 0 t a=25 c - -6a i d = --3a [pch] [pch] i d = --6a, v gs = --4.0v i d = --3a, v gs = --2.5v 0.01 0.1 1.0 10 3 5 7 2 5 3 2 7 3 5 7 2 0.4 0.5 0.6 0.7 0.8 0.9 1.0 it05897 it05896 0.01 0.1 1.0 10 23 57 23 7 52357 0.1 1.0 10 5 2 3 7 2 3 5 7 2 t a= --25 c 75 c 25 c v ds =10v t a=75 c 25 c -- 2 5 c v gs =0v [nch] [nch] it09901 -- 0 . 01 --0.1 23 57 23 57 2 3 57 -- 1 . 0 - -10 3 1.0 7 5 3 2 0.1 7 10 2 5 3 2 v ds = --10v 75 c 25 c t a= --25 c it09902 -- 0 . 3 -- 0 .4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 -- 0 . 01 -- 0 . 1 -- 1 0 7 5 3 2 2 -- 1 . 0 7 5 3 2 7 5 3 v gs =0v - -25 c 25 c ta=75 c [pch] [pch]
FW905 rev.0 i page 5 of 6 i www.onsemi.com drain-to-source voltage, v ds -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a v gs -- qg a s o a s o v gs -- qg t otal gate charge, qg -- nc gate-to-source voltage, v gs -- v t otal gate charge, qg -- nc gate-to-source voltage, v gs -- v [pch] 0--5- -10 --15 --20 100 1000 5 3 2 7 5 3 2 f=1mhz ciss coss crss it09904 02 6 10 14 4812 16 20 18 0 - -0.5 - -1.0 - -1.5 - -2.0 - -2.5 - -3.0 - -3.5 - -4.0 v ds = --10v i d = --6a it09906 [pch] - -1.0 - -10 - -100 - -0.01 - -0.1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 it09908 - -0.01 23 57 - -1.0 --10 - -0.1 23 57 23 57 23 i d = --6a operation in this area is limited by r ds (on). 10ms 100ms 1ms i dp = --52a 10 s dc operation ( t a=25 c) [pch] 10s 24 0681014 12 16 18 20 100 1000 7 2 3 5 7 5 3 2 it05899 10 100 1000 0.1 1.0 23 57 57 23 2 3 5 7 2 3 5 7 it05898 coss crss ciss f=1mhz t d (on) t r t d (off) t f v dd =10v v gs =4.5v [nch] [nch] - -0.01 --0.1 23 57 2 - -1.0 357 2 - -10 357 2 100 7 5 3 2 1000 7 5 3 2 10 v dd = -- 10v v gs = -- 4 v t d (on) t d (off) t r t f it09903 [pch] 1.0 10 100 0.01 0.1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 it09907 0.01 23 57 1.0 10 0.1 23 57 23 57 23 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 20 15 510 4.0 it09905 v ds =10v i d =7a i d =7a operation in this area is limited by r ds (on). 10ms 100ms 1ms i dp =52a 10 s dc operation ( t a=25 c) [nch] [nch] 10s drain-to-source voltage, v ds -- v ciss, coss, crss -- pf drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf drain current, i d -- a switching time, sw time -- ns sw time -- i d ciss, coss, crss -- v ds ciss, coss, crss -- v ds sw time -- i d t a=25 c single pulse mounted on a ceramic board (1500mm 2 ? 0.8mm) 1unit t a=25 c single pulse mounted on a ceramic board (1500mm 2 ? 0.8mm) 1unit
FW905 rev.0 i page 6 of 6 i www.onsemi.com [nch, pch] ambient temperature, ta -- c allowable power dissipation, p d -- w p d -- ta 0 0 20 40 0.4 1.6 1.2 0.8 1.7 2.0 60 80 100 120 140 160 it09909 mounted on a ceramic board (1500mm 2 ? 0.8mm) 1unit FW905/d

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