80713 tkim/61312 tkim/12512pa tkim tc-00002681 no. a0273-1/7 http://onsemi.com semiconductor components industries, llc, 2013 august, 2013 FW4604 power mosfet 30v, 6a, 39m , C 30v, C 4.5a, 65m , complementary dual soic8 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? on-state resistance nch : r ds (on)1=30m (typ.) pch : r ds (on)1=50m (typ.) ? 4.5v drive ? halogen free compliance ? nch + pch mosfet ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions n-channel p-channel unit drain to source voltage v dss 30 --30 v gate to source voltage v gss 20 20 v drain current (dc) i d 6 --4.5 a drain current (pw 10s) i dp duty cycle 1% 6.5 --5 a drain current (pw 10 s) i dp duty cycle 1% 24 --18 a allowable power dissipation p d when mounted on ceramic substrate (2000mm 2 0.8mm) 1unit, pw 10s 1.8 w total dissipation p t when mounted on ceramic substrate (2000mm 2 0.8mm), pw 10s 2.2 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7072-001 ordering number : ena0273b product & package information ? package : soic8 ? jeita, jedec : sc-87, sot-96 ? minimum packing quantity : 2,500 pcs./reel packing type : tl marking electrical connection 4.9 0.22 6.0 3.9 1.375 14 5 8 0.445 1.27 0.715 0.375 1.55 0.175 0.254 (gage plane) 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 soic8 tl w4604 lot no. 8765 1234 FW4604-tl-2w
FW4604 no. a0273-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max [n-channel] drain to source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 a gate to source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.7 2.6 v forward transfer admittance | yfs | v ds =10v, i d =6a 3 s static drain to source on-state resistance r ds (on)1 i d =6a, v gs =10v 30 39 m r ds (on)2 i d =3a, v gs =4.5v 50 70 m input capacitance ciss v ds =10v, f=1mhz 490 pf output capacitance coss 85 pf reverse transfer capacitance crss 45 pf turn-on delay time t d (on) see speci ed test circuit. 8ns rise time t r 45 ns turn-off delay time t d (off) 31 ns fall time t f 28 ns total gate charge qg v ds =15v, v gs =10v, i d =6a 9.1 nc gate to source charge qgs 1.7 nc gate to drain ?miller? charge qgd 1.7 nc diode forward voltage v sd i s =6a, v gs =0v 0.84 1.2 v [p-channel] drain to source breakdown voltage v (br)dss i d =--1ma, v gs =0v --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0v --1 a gate to source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (of f) v ds =--10v, i d =--1ma --1.7 --2.6 v forward transfer admittance | yfs | v ds =--10v, i d =--4.5a 5.2 s static drain to source on-state resistance r ds (on)1 i d =--4.5a, v gs =--10v 50 65 m r ds (on)2 i d =--2.5a, v gs =--4.5v 85 119 m input capacitance ciss v ds =--10v, f=1mhz 430 pf output capacitance coss 105 pf reverse transfer capacitance crss 75 pf turn-on delay time t d (on) see speci ed test circuit. 7.5 ns rise time t r 42 ns turn-off delay time t d (off) 43 ns fall time t f 40 ns total gate charge qg v ds =--15v, v gs =--10v, i d =--4.5a 10 nc gate to source charge qgs 2.0 nc gate to drain ?miller? charge qgd 2.5 nc diode forward voltage v sd i s =--4.5a, v gs =0v --0.86 --1.5 v switching time test circuit [n-channel] [p-channel] ordering information device package shipping memo FW4604-tl-2w soic8 2,500pcs./reel pb-free and halogen free pw=10s d.c.1% p. g 50 g s d i d =6a r l =2.5 v dd =15v v out v in 10v 0v v in FW4604 pw=10s d.c.1% p. g 50 g s d i d = --4.5a r l =3.3 v dd = --15v v out v in 0v --10v v in FW4604
FW4604 no. a0273-3/7 i d -- v gs drain current, i d -- a gate to source voltage, v gs -- v drain to source voltage, v ds -- v i d -- v ds drain current, i d -- a gate to source voltage, v gs -- v static drain to source on-state resistance, r ds (on) -- m ambient temperature, ta -- c r ds (on) -- ta r ds (on) -- v gs static drain to source on-state resistance, r ds (on) -- m i s -- v sd source current, i s -- a diode forward voltage, v sd -- v drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s sw time -- i d switching time, sw time -- ns drain current, i d -- a ciss, coss, crss -- v ds drain to source voltage, v ds -- v ciss, coss, crss -- pf [nch] [nch] 0 it16718 0 2 4 1 3 5 6 0 0 it16716 it16717 0.20.1 0.40.3 0.60.5 0.8 0.9 0.7 1.0 0 1 2 3 4 5 1 4 7 2 5 9 8 3 6 10 10 61 4 28 41 2 1 6 0 20 40 60 80 100 v ds =10v --25 c ta=75 c v gs =2.5v 4.0v 25 c ta=25 c it16719 --60 --40 --20 0 20 40 60 80 100 120 140 160 0 60 100 20 40 80 10.0v 16.0v v gs =4.5v, i d =3a v gs =10.0v, i d =6a 4.5v 6.0v i d =3a 6a [nch] [nch] [nch] [nch] 3.0v 3.5v 2 100 10 7 5 5 3 2 3 1000 7 10 1.0 7 5 3 2 100 7 5 3 2 0 0.2 0.4 0.6 1.2 1.0 0.8 0.1 2 1.0 10 357 it16722 it16720 it16721 068 2 4 10 26 28 22 24 16 18 12 14 20 30 0.01 0.1 7 5 3 2 2 1.0 7 5 3 2 it16723 0.1 2 2 1.0 10 7 5 3 7 5 3 0.1 2 0.01 57 23 1.0 2 57 3 ta= --25 c 75 c 25 c v ds =10v --25 c 25 c ta=75 c v gs =0v v dd =15v v gs =10v t d (off) t r t f ciss coss crss f=1mhz 10 57 3 10 7 5 3 23 57 t d (on) [nch] [nch] [nch] [nch]
FW4604 no. a0273-4/7 total gate charge, qg -- nc v gs -- qg gate to source voltage, v gs -- v i d -- v gs drain current, i d -- a gate to source voltage, v gs -- v drain to source voltage, v ds -- v i d -- v ds drain current, i d -- a gate to source voltage, v gs -- v static drain to source on-state resistance, r ds (on) -- m ambient temperature, ta -- c r ds (on) -- ta r ds (on) -- v gs static drain to source on-state resistance, r ds (on) -- m i s -- v sd source current, i s -- a diode forward voltage, v sd -- v drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s 024681 0 0 1 2 3 4 6 5 7 8 10 9 it16724 it16725 v ds =15v i d =6a [nch] -- 2 -- 1 -- 8 -- 3 -- 4 -- 6 -- 7 -- 5 0 0 --4.0 --4.5 --3.0 --3.5 --2.0 --2.5 --1.0 --1.5 --0.5 0 --1.0 --0.8 --0.6 --0.1 --0.2 --0.4 --0.9 --0.7 --0.3 --0.5 it16726 0- - 2 -- 1 -- 4 -- 3 -- 5 it16727 ta=75 c - -25 c v gs = - -2.5v v ds = --10v --3.0v --3.5v --16 .0v 25 c --10.0v --4.0v --6.0v --4.5v [pch] [pch] --60 0 20 40 60 80 200 180 140 100 120 160 --40 --20 0 20 40 60 80 100 120 140 160 v gs = --10.0v, i d = --4.5a it16729 0--2 80 -- 4 200 0 20 40 100 180 160 140 120 60 --6 --8 --12 --10 --14 --16 ta=25 c i d = --2.5a --4.5a it16728 --0.01 --0.4 --0.6 --0.8 --1.0 --1.2 0 --0.2 --0.1 2 7 5 3 2 --1.0 2 7 5 3 v gs =0v --0.01 --0.1 0.1 --1.0 23 57 23 57 2 --10 357 1.0 2 7 5 3 2 10 7 5 3 v ds = --10v it16730 it16731 ta= --25 c --25 c 25c ta=75 c 25c 75 c v gs = --4.5v, i d = --2.5a --10 7 5 3 [pch] [pch] [pch] [pch] a s o drain to source voltage, v ds -- v drain current, i d -- a 2 2 3 5 7 0.1 2 3 5 7 1.0 0.01 0.01 0.1 57 23 2 1.0 57 32 10 100 57 7 3235 operation in this area is limited by r ds (on). 100s 100ms dc operation 10ms 1ms 2 3 5 7 3 5 7 10 100 i dp =24a (pw 10 s) i d =6a [nch] 10s ta=25 c single pulse when mounted on ceramic substrate (2000mm 2 0.8mm)
FW4604 no. a0273-5/7 sw time -- i d switching time, sw time -- ns drain current, i d -- a ciss, coss, crss -- v ds drain to source voltage, v ds -- v ciss, coss, crss -- pf total gate charge, qg -- nc v gs -- qg gate to source voltage, v gs -- v it16737 it16736 0 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 --10 -- 9 10 2468 v ds = --15v i d = --4.5a it16734 it16735 0 --20 -- 5 100 1000 10 7 5 3 2 7 5 3 2 --15 --10 --25 --30 f=1mhz it16733 ciss coss crss [pch] [pch] a s o drain to source voltage, v ds -- v drain current, i d -- a [pch] 2 2 3 5 7 --0.1 2 3 5 7 --1.0 --0.01 --0.01 --0.1 57 23 2 --1.0 57 32 --10 57 --100 7 3235 operation in this area is limited by r ds (on). 100s 100ms dc operation 10ms 1ms 2 3 5 7 3 5 7 --10 --100 i dp = --18a (pw 10 s) i d = --4.5a 10s ta=25 c single pulse when mounted on ceramic substrate (2000mm 2 0.8mm) allowable power dissipation(fet2), p d -- w p d (fet1) -- p d (fet2) allowable power dissipation(fet1), p d -- w ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w 0 25 50 75 100 125 150 175 0 0.4 0.2 0.8 0.6 1.0 1.4 1.2 1.8 1.6 2.4 2.0 2.2 1unit 0 0 0.4 0.8 0.2 0.6 0.4 1.21.0 1.2 1.0 0.8 0.2 0.6 1.4 1.8 2.0 2.2 1.6 1.4 1.8 1.6 2.4 2.2 2.0 2.4 when mounted on ceramic substrate (2000mm 2 0.8mm) , pw 10s total dissipation when mounted on ceramic substrate (2000mm 2 0.8mm) , pw 10s [nch/pch] [nch/pch] --0.1 100 2 3 10 1.0 2 --1.0 22 357 --10 357 7 3 5 7 5 it16732 t d(on) t r v dd = --15v v gs = --10v t f t d(off) [pch]
FW4604 no. a0273-6/7 outline drawing land pattern example FW4604-tl-2w mass (g) unit 0.082 * for reference mm unit: mm 1.75 1.27 0.65 5.60
FW4604 ps no. a0273-7/7 note on usage : since the FW4604 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
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