1 elm34608aa - n 7 - elm 3 4608a a - n uses advanced trench technology to provide excellent rds (on) and low gate charge. n-channel p-channel ? vds = 6 0v vds= - 6 0v ? id = 4.5 a id= -3.5 a ? rds ( on ) < 5 8 m (vgs = 1 0 v) rds(on) < 90 m (vgs = - 1 0 v) ? rds(on) < 85 m (vgs = 4.5 v ) rds(on) < 135 m (vgs = -4.5 v ) parameter symbol n-ch (max.) p-ch ( max.) unit note drain - s ource voltage vds 6 0 - 6 0 v gate - s ource v oltag e vgs 20 20 v conti nuous drain current ta = 25 c id 4.5 - 3.5 a ta = 70 c 4.0 - 3.0 pulsed d rain current idm 2 0 - 2 0 a 3 power dissipation t c = 25 c pd 2.0 2.0 w t c = 70 c 1 . 3 1 . 3 j unction and storage temperature range t j , t s tg - 55 to 150 - 55 to 150 c g e neral description f eatures maximum a bsolute ratings thermal characteristics parameter symbol device typ. max. unit note maximum junction - to - a mbient r ja n-ch 62.5 c /w maximum junction - to - a mbient r ja p -ch 62.5 c /w complementary mosfet s 2 g 2 d 2 s 1 g 1 d 1 c ircuit ? n- ch ? p - ch pin configuration so p - 8 (top vi ew) pin no. pin name 1 source1 2 gate1 3 source2 4 gate2 5 drain2 6 drain2 7 drain1 8 drain1 t a = 25 c . u nless otherwise noted. 4 3 2 1 5 6 7 8
2 electrical characteristics (n-ch) parameter symbol conditions min. typ. max. unit note static parameters drain - s ource breakdown voltage bv ds s id = 25 0 a , vgs = 0v 6 0 v zero g ate voltage drain current id ss vds = 48 v, vgs = 0v 1 a vds = 4 0 v, vgs = 0v, t a = 55 c 10 gate - b ody leakage current igss vds = 0v, vgs = 20 v 100 n a gate t hreshold voltage vgs (th) vds = vg s , id = 25 0 a 1.0 1.5 2.5 v on s tate drain current i d (on ) vgs = 10 v, vds = 5v 2 0 a 1 static drain - s ource on - r esistance rds (on ) vgs = 10 v, id = 4.5 a 42 58 m 1 vgs = 4 .5v, id = 4 a 55 85 forward transconductance gfs vds = 10 v, id = 4.5 a 14 s 1 diode forward voltage vsd i f = is =1.3a , vgs=0v 1 v 1 max.body - d iode c ontinuous c urrent is 1.3 a pulsed current ism 2.6 a 3 dynamic parameters input capacitance c iss vgs = 0v, vds = 25 v, f = 1mh z 650 pf output capacitance c oss 80 pf reverse transfer capacitance c r ss 35 pf switching parameters total gate charge q g vgs = 10 v, vds = 3 0 v, id = 4.5 a 12.0 16.0 nc 2 gate - s ource charge q gs 2.4 nc 2 gate - d rain charge q gd 2.6 nc 2 turn - o n delay time td (on) vgs = 10 v, vds = 3 0 v , id = 1a rgen = 6 11 20 ns 2 turn - o n rise t ime t r 8 18 ns 2 turn - o ff delay time td ( of f ) 19 35 ns 2 turn - o ff fall t ime t f 6 15 ns 2 elm34608aa - n 7 - complem entary mosfet note : 1. p ulse test : pulsed width 300 sec and duty cycle 2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4 . duty cycle 1 %. t a = 25 c . u nless otherwise noted.
3 elm34608aa - n 7 - typical electrical and thermal characteristics (n-ch) 4 oct - 01 - 2004 n - & p - channel enhancement mode field effect transistor p5 8 06n v g sop - 8 lead - free niko - sem body diode forward voltage variation with source current and temperature 25 c t = 125 c 0.6 0.1 is - reverse drain current(a) 0.0001 0 0.001 0.01 sd 0.2 0.4 v = 0v 1 10 100 a gs 0.8 1.0 -55 c 1.2 v - body diode forward voltage(v) complem entary mosfet
4 elm34608aa - n 7 - 5 oct - 01 - 2004 n - & p - channel enhancement mode field effect transistor p5 8 06n v g sop - 8 lead - free niko - sem elm34608aa - n complem entary mosfet 7 -
5 elm34608aa - n 7 - electrical characteristics (p-ch) parameter symbol conditions min. typ. max. unit note static parameters drain - s ource breakdown voltage bv d ss id = - 25 0 a , vgs = 0v - 6 0 v zero g ate voltage drain current i ds s vds = - 48 v, vgs = 0v - 1 a vds = - 4 0 v, vgs = 0v, t a = 55 c -10 gate - b ody leakage current ig s s vds = 0v, vgs = 20 v 100 n a gate t hreshold voltage vgs (th) vds = vgs , id = - 25 0 a - 1.0 - 1. 5 - 2. 5 v on s tate drain current id (on ) vgs = - 10 v, vds = - 5v - 2 0 a 1 static drain - s ource on - r esistance rds (on ) vgs = - 10 v, id = -3. 5 a 70 90 m 1 vgs = - 4 .5v, id = - 3 a 100 135 forward transconductance gfs vds = - 5 v, id = -3. 5 a 9 s 1 diode forward voltage vsd i f = is=-1.3a , vgs = 0 v - 1 v 1 max.body - d iode continuous c urrent is - 1.3 a pulsed current ism -2.6 a 3 dynamic parameters input capacitance c iss vgs = 0v, vds = - 3 0v, f = 1mh z 630 pf output capacitance c oss 81 pf reverse transfer capacitance c r ss 33 pf switching parameters total gate charge q g vgs = - 10 v, vds = - 3 0 v id = -3. 5 a 11.0 15.0 nc 2 gate - s ource charge q gs 2.1 nc 2 gate - d rain charge q gd 2.5 nc 2 turn - o n delay time td (on) vgs = - 10 v, vds = - 3 0 v id = - 1a, rgen = 6 6 13 ns 2 turn - o n rise t ime t r 8 18 ns 2 turn - o ff delay time td ( of f ) 17 31 ns 2 turn - o ff fall t ime t f 11 20 ns 2 complem entary mosfet note : 1. p ulse test : pulsed width 300 sec and duty cycle 2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. t a = 25 c . u nless otherwise noted.
6 elm34608aa - n 7 - typical electrical and thermal characteristics (p-ch) 6 oct - 01 - 2004 n - & p - channel enhancement mode field effect transistor p5 8 06n v g sop - 8 lead - free niko - sem body diode forward voltage variation with source current and temperature t = 125 c -v - body diode forward voltage(v) -is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 s d 0.2 0.6 25 c v = 0v 1 10 100 a gs 1.0 0.8 1.2 -55 c 1.4 complem entary mosfet
7 elm34608aa - n 7 - 7 oct - 01 - 2004 n - & p - channel enhancement mode field effect transistor p5 8 06n v g sop - 8 lead - free niko - sem complem entary mosfet
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