, u na. 2 0 ster n ave . telephone : (973 ) 376-292 2 springfield , ne w jerse y 0708 1 (212 ) 227-600 5 u.s.a . fax : (973 ) 376-896 0 silico n np n powe r transisto r buv4 1 descriptio n ? lo w collecto r saturatio n voltage - : v c e(sat) = 0.8 v (max. ) @l c = 3 a ? hig h switchin g spee d application s ? designe d fo r hig h current , hig h speed , hig h powe r applications . absolut e maximu m ratings(ta=25c ) symbo l vce v vce o veb o i c i c m i b ib m p c t j tsl g paramete r collector-emitte r voltag e v be =-1.5 v collector-emitte r voltag e emitter-bas e voltag e collecto r current-continuou s collecto r current-pea k bas e current-continuou s bas e current - pea k collecto r powe r dissipatio n @t c =25" c junctio n temperatur e storag e temperatur e rang e valu e 30 0 20 0 7 1 5 2 0 3 5 12 0 20 0 -65-20 0 uni t v v v a aa a w ? c r therma l characteristic s symbo l r-t h j- c paramete r ma x therma l resistance , junctio n t o cas e 1 .4 6 uni t ?c/w 3 i pi n 1.bas e , y 2 . emitte r ' v 3 . collec t o r (case ) u ? 1 -?iu - d 2 p l u ^ '?? , s*~l^\ i t * &_. $ g b t ^*^_^s t | ?-g e m m di m mi n ma x a 330 0 b 25.3 0 26.6 7 i. ' 7 .s o 3.3 0 d 0.9 0 1 i d e 1 .4 0 1 .6 0 g i d 9 2 h 54 6 k 11 . * 0 13.5 0 l 167 5 170 5 _?,_?? . ? ? 0 3 0 0 0 3 0 2 0 v 4 x i 4 5 0 n j semi-conductor s reserve s th e righ t t o chang e test conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
silico n np n powe r transisto r buv4 1 electrica l characteristic s t c =25 c unles s otherwis e specifie d symbo l vceo(sus ) v(br)eb o vce(sat)- 1 vce(sat)- 2 vce(sat)- 3 v b e(sat)- 1 vee(sat)- 2 ice r ice v ieb o paramete r collector-emitte r sustainin g voltag e emitter-bas e breakdow n voltag e collector-emitte r saturatio n voltag e collector-emitte r saturatio n voltag e collector-emitte r saturatio n voltag e base-emitte r saturatio n voltag e base-emitte r saturatio n voltag e collecto r cutof f curren t collecto r cutof f curren t emitte r cutof f curren t condition s l c = 0.2a ; i b = 0 ; l = 25m h i e = 50ma ; l c = 0 i c =3a;i b =0.15 a i c =6a;i b =0.6 a lc = 8a ; i b = 1 a i c =6a;i b =0.6 a lc = 8a ; i b = 1 a v c e=300v;r b e=10 n v ce = 300v;r b e = 1 0 q ;t c =100' c v c e=300v;v b e=-1.5 v v ce = 300v;v be = -1.5v;t c =100' c v eb = 5v ; l c = 0 mi n 20 0 7 typ . ma x 0. 8 0. 9 1. 2 1. 6 1. 8 0. 5 2. 5 0. 5 2.5 1. 0 uni t v vv vv v v m a m a m a switchin g times , resistiv e loa d t r t s t f ris e tim e storag e tim e fal l tim e lc=8a;l b i=1a;v c c=160v ; r b2 = 2. 5 n ; v bb = -5v , t p = 3 0 u s 0. 5 1. 2 0. 3 v- s p s u s downloaded from: http:///
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