photomultiplier tubes r4220 r4220p (for photon counting) very high cathode sensitivity with low noise photocathode general fluorescence spectrometer chemiluminescence detection raman spectroscopy low light level ditection spectral response .................................. high cathode sensitivity luminous ......................................................... radiant at 410 nm ............................................. high anode sensitivity (at 1000 v) luminous ......................................................... radiant at 410 nm ...................................... low dark current ....................................................... low dark counts (r4220p) ......................................... 185 nm to 710 nm 100 a/lm 70 ma/w 1200 a/lm 8.4 10 5 a/w 0.2 na 10 s -1 parameter description / value unit spectral response wavelength of maximum response 185 to 710 nm nm photocathode materiai 410 structure 4pf anode to last dynode 6pf anode to all other electrodes minimum effective area low noise bialkali secondary emitting surface low noise bialkali mm window material weight 8 24 g c c 45 dynode direct interelectrode capacitances base suitabie socket assembly uv glass circular-cage number of stages 9 11-pin base jedec no. b11-88 e717?3 (sold separately) e717?4 (sold separately) suitabie socket e678?1a (sold separately) storage temperature -30 to +50 operating ambient temperature -30 to +50 figure 1: typical spectral response tpmsb0010ea 100 10 1 0.1 0.01 100 200 300 400 500 600 700 800 wavelength (nm) cathode radiant sensitivity (ma/w) quantum efficiency (%) quantum efficiency cathode radiant sensitivity information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?010 hamamatsu photoni cs k.k. subject to local technical requirements and regulations, availability of products included in this promotional material may var y. please consult with our sales office. specifications features applications
photomultiplier tubes r4220, r4220p (for photon counting) maximum ratings (absolute maximum values) parameter value supply voltage between anode and cathode (dc) between anode and last dynode (dc) 1250 250 0.1 v v ma average anode current a unit characteristlcs (at 25 c) notes parameter min. typ. typ. max. r4220 for general purpose r4220p for photon counting cathode sensitivity anode dark current f anode dark counts f anode sensitivity after 30 minutes storage in the darkness 0.2 2.0 anode current stability l a: b: c: d: e: f: g: h: j: averaged over any interval of 30 seconds maximum. the light source is a tungsten filament lamp operated at a distribution tem- perature of 2856 k. supply voltage is 150 volts between the cathode and all other electrodes connected together as anode. the value is cathode output current when a blue filter(corning cs-5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as note b. measured with the same light source as note b and with the anode-to- cathode supply voltage and voltage distribution ratio shown in table 1 be- low. measured with the same supply voltage and voltage distribution ratio as note d after removal of light. measured at the plateau voltage. eni is an indication of the photon-limited signal-to-noise ratio. it refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. where q = electronic charge (1.60 10 -19 coulomb). ldb = anode dark current(after 30 minute storage) in amperes. g = gain. f = bandwidth of the system in hertz. 1 hertz is used. s = anode radiant sensitivity in amperes per watt at the wave- length of peak response. the rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. the electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. in measurement, the whole photo- cathode is illuminated. k: l: also called transit time jitter. this is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the fwhm of the frequency distribution of electron transit times. hysteresis is temporary instability in anode current after light and voltage are applied. eni = s 2q . ldb . g . f current hysteresis voltage hysteresis 0.1 1.0 radiant (at peak wavelength) 70 blue sensitivity index c 8 anode pulse rise time h 2.2 electron transit time j 22 transit time spread (tts) k 1.2 time response d electrodes k dy1 dy2 dy3 dy4 dy5 dy6 dy7 dy8 dy9 p distribution ratio 1 111111111 suppiy voltage : 1000 v (dc) k : cathode, dy : dynode, p : anode quantum efficiency (at peak wavelength) 80 100 23 gain e eni(equivalent noise input) g unit luminous b radiant at 400 nm 8.4 10 5 luminous d 1200 1000 3.30 10 -17 min. max. 0.2 0.5 na 0.1 1.0 % % 70 ma/w 8 2.2 22 1.2 ns ns ns 80 100 a/lm 23 % 8.4 10 5 a/w 1200 a/lm 1000 1.2 10 7 1.2 10 7 10 50 s -1 3.30 10 -17 w table 1:voltage distribution ratio hysteresis = 100(%) l max. l i l min. (1)current hysteresis the tube is operated at 750 volts with an anode current of 1 micro-ampere for 5 minutes. the light is then removed from the tube for a minute. the tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)voltage hysteresis the tube is operated at 300 volts with an anode current of 0.1 micro-ampere for 5 minutes. the light is then removed from the tube and the supply voltage is quickly increased to 800 volts. after a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. tpmsb0002ea time max. l min. l i l anode current 0 5 6 7 (minutes)
figure 2: typical gain and anode dark current figure 3: typical time response figure 6: typical plateau data for r4220p figure 7: typical temperature characteristics of dark count for r4220p figure 4: typical eni vs. wavelength figure 5: typical eadci (equivalent anode dark current input) vs. supply voltage tpmsb0011ea tpmsb0004eb tpmsb0012ea tpmsb0013ea data shown here, which is given from a relation among supply voltage, anode sensitivity and dark current, serves as a good reference in order to determine the most suitable supply voltage or its range. tpmsb0228ea tpmsb0015ea 300 500 700 1000 1500 supply voltage (v) time (ns) 1 2 4 6 8 10 20 40 60 80 100 rise time transit time 10 - 13 10 - 16 10 - 17 100 400 500 600 800 wavelength (nm) equivalent noise input (w) 10 - 15 10 - 14 200 300 700 10 - 10 10 - 13 10 - 14 300 500 600 1000 1500 supply voltage (v) 10 - 12 10 - 11 400 800 eadci (lm) 10 - 1 -20 0 +20 +40 +60 temperature ( c) dark counts (s -1 ) 10 0 10 1 10 2 10 3 10 4 700 0 10000 20000 30000 40000 50000 60000 70000 80000 90000 100000 0 10 20 30 40 50 60 70 80 90 100 750 800 850 900 950 supply voltage (v) signal counts (s -1 ) dark counts (s -1 ) 1000 1050 1100 1150 1200 dark signal+dark wavelength of incident light temperature : 450 (nm) : 25 ( c) 10 - 5 10 - 10 10 - 11 10 - 12 300 400 500 600 800 1000 1500 supply voltage (v) anode dark current (a) 10 - 9 10 - 8 10 - 7 10 - 6 gain anode dark current gain 10 8 10 3 10 2 10 1 10 4 10 5 10 6 10 7
tpms1003e03 apr. 2010. ip photomultiplier tubes r4220, r4220p (for photon counting) figure 8: dimensional outline and basing diagram (unit: mm) figure 9: socket e678-11a (sold separately) figure 10: d type socket assembly e717-63 (sold separately) figure 11: d type socket assembly e717-74 (sold separately) warning?ersonal safety hazards electrical shock operating voltages applied to this device present a shock hazard. * hamamatsu also provides c4900 series compact high voltage power supplies and c6270 series dp type socket assemblies which incorporate a dc to dc converter type high voltage power supply. tacca0002eh tacca0277ea tpmsa0001eb tacca0064ea bottom view (basing diagram) 33 5 49 3.5 38 29 4 18 1 2 4 3 5 7 6 8 9 10 k dy1 dy2 dy3 dy4 dy5 dy6 dy7 dy8 dy9 p direction of light 28.5 1.5 8 min. photocathode 24 min. 49.0 2.5 80 max. 94 max. 11 32.2 0.5 11 pin base jedec no. b11-88 potting compound r1 to r10 c1 to c3 : 330 k ? : 10 nf 3.5 33.0 0.3 49.0 0.3 29.0 0.3 38.0 0.3 4 0.7 30.0 450 10 5 31.0 0.5 housing (insulator) r10 r9 r8 r7 r6 r5 r4 r3 r2 r1 dy9 dy8 dy7 dy6 dy5 dy4 dy3 dy2 dy1 c3 c2 c1 signal gnd signal output rg-174/u(black) -hv awg22 (violet) p k 10 power supply gnd awg22 (black) socket pin no. pmt 9 8 7 6 5 4 3 2 1 11 +0 -1 hamamatsu photonics k.k., electron tube division 314-5, shimokanzo, iwata city, shizuoka pref., 438-0193, japan, telephone: (81)539/62-5248, fax: (81)539/62-2205 u.s.a.: hamamatsu corporation: 360 foothill road, p. o. box 6910, bridgewater. n.j. 08807-0910, u.s.a., telephone: (1)908-231-0960, fa x: (1)908-231-1218 e-mail: usa@hamamatsu.com germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49)8152-375-0, f ax: (49)8152-2658 e-mail: info@hamamatsu.de france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: (3 3)1 69 53 71 00, fax: (33)1 69 53 71 10 e-mail: infos@hamamatsu.fr united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road welwyn garden city hertfordshire al7 1bw, united kingdom, teleph one: 44-(0)1707-294888, fax: 44(0)1707-325777 e-mail: info@hamamatsu.co.uk north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171-41 solna, sweden, telephone: (46)8-509-031-00, fax: (46)8-509-031-01 e-mail: info@hamamatsu.se italy: hamamatsu photonics italia: s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39)02-935 81 733, fax: (39)02-935 81 741 e-mail: info@hamamatsu.it web site www.hamamatsu.com r1 to r10 c1 to c3 : 330 k ? : 10 nf r10 r9 r8 r7 r6 r5 r4 r3 r2 r1 dy9 dy8 dy7 dy6 dy5 dy4 dy3 dy2 dy1 c3 c2 c1 signal output (a) -hv (k) p k 10 gnd (g) socket pin no. 9 8 7 6 5 4 3 2 1 11 pmt * "wiring diagram at above applies when -hv is sup- plied." to supply +hv,connect the pin "g" to+hv, and the pin "k" to the gnd. refer to "(d) d-2" on page 87 for the connection method. 26.0 0.2 22.4 0.2 32.0 0.5 26.0 0.2 32.0 0.5 2 7 2.7 14.0 0.5 30 10 0.7 4- 2.8 housing (insulator) r13 k a g
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