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54-94-104mt..kpbf series www.vishay.com vishay semiconductors revision: 14-jan-14 1 document number: 94351 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 three phase ac switch (power modules), 50 a to 100 a features ? package fully compatible with the industry standard int-a-pak power modules series ? high thermal conductivity package, electrically insulated case ? outstanding number of powe r encapsulated components ? excellent power volume ratio ? 4000 v rms isolating voltage ? ul e78996 approved ? designed and qualified for industrial level ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 description a range of extremely compact, encapsulated three phase ac switches offering efficient and reliable operation. they are intended for use in gene ral purpose and heavy duty applications as control motor starter. product summary i o 50 a to 100 a v rrm 800 v to 1600 v package mt-k circuit three phase ac switch mtk major ratings and characteristics symbol characteristics 54mt.k 94mt.k 104mt.k units i o 50 90 100 a t c 80 80 80 c i fsm 50 hz 390 950 1130 a 60 hz 410 1000 1180 i 2 t 50 hz 770 4525 6380 a 2 s 60 hz 700 4130 5830 i 2 ? t 7700 45250 63800 a 2 ? s v rrm range 800 to 1600 v t stg range -40 to 125 c t j range -40 to 125 c
54-94-104mt..kpbf series www.vishay.com vishay semiconductors revision: 14-jan-14 2 document number: 94351 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications note (1) for single ac switch voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v v drm , maximum repetitive peak off-state voltage, gate open circuit v i rrm /i drm , maximum at t j = 125 c ma 54mt..k 80 800 900 800 20 (1) 100 1000 1100 1000 120 1200 1300 1200 140 1400 1500 1400 160 1600 1700 1600 94/104mt..k 80 800 900 800 40 (1) 100 1000 1100 1000 120 1200 1300 1200 140 1400 1500 1400 160 1600 1700 1600 forward conduction parameter symbol test condition s 54mt.k 94mt.k 104mt.k units maximum i rms output current at case temperature i o for all conduction angle 50 90 100 a 80 80 80 c maximum peak, one-cycle ? forward, no n-repetitive ? on state surge current i tsm t = 10 ms no voltage ? reapplied initial t j = t j ? maximum 390 950 1130 a t = 8.3 ms 410 1000 1180 t = 10 ms 100 % v rrm reapplied 330 800 950 t = 8.3 ms 345 840 1000 maximum i 2 t for fusing i 2 t t = 10 ms no voltage ? reapplied 770 4525 6380 a 2 s t = 8.3 ms 700 4130 5830 t = 10 ms 100 % v rrm reapplied 540 3200 4510 t = 8.3 ms 500 2920 4120 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 7700 45 250 63 800 a 2 ? s low level value of ? threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j maximum 1.16 0.99 0.99 v high level value of ? threshold voltage v t(to)2 (i > ? x i t(av) ), t j maximum 1.44 1.19 1.15 low level value on-state ? slope resistance r t1 16.7 % x ? x i t(av) < i < ? x i t(av) ), t j maximum 12.54 4.16 3.90 m ? high level value on-state ? slope resistance r t2 (i > ? x i t(av) ), t j maximum 11.00 3.56 3.48 maximum on-state ? voltage drop v tm i pk = 150 a, t j = 25 c ? t p = 400 s single junction 2.68 1.55 1.53 v maximum non-re petitve rate ? of rise of turned on current di/dt t j = 25 c, from 0.67 v drm , i tm = ? x i t(av) , ? i g = 500 ma, t r < 0.5 s, t p > 6 s 150 a/s maximum holding current i h t j = 25 c, anode supply = 6 v, ? resistive load, grate open circuit 200 ma maximum latching current i l t j = 25 c, anode supply = 6 v, resistive load 400
54-94-104mt..kpbf series www.vishay.com vishay semiconductors revision: 14-jan-14 3 document number: 94351 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) available with dv/dt = 1000 v/s, to comple te code add s90 i. e. 104mt160kbs90 note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc ? blocking parameter symbol test condit ions 54mt.k 94mt.k 104mt.k units rms isolation voltage v ins t j = 25 c all terminal shorted ? f = 50 hz, t = 1 s 4000 v maximum critical rate of rise of off-state voltage dv/dt (1) t j = t j maximum, linear to 0.67 v drm , ? gate open circuit 500 v/s triggering parameter symbol test conditions 54mt.k 94mt.k 104mt.k units maximum peak gate power p gm t j = t j maximum 10 w maximum average gate power p g(av) 2.5 maximum peak gate current i gm 2.5 a maximum peak negative ? gate voltage - v gt 10 v maximum required dc gate ? voltage to trigger v gt t j = 40 c anode supply = 6 v, resistive load 4.0 t j = 25 c 2.5 t j = 125 c 1.7 maximum required dc gate ? current to trigger i gt t j = -40 c 270 ma t j = 25 c 150 t j = 125 c 80 maximum gate voltage ? that will not trigger v gd t j = t j maximum, rated v drm applied 0.25 v maximum gate current ? that will not trigger i gd 6ma thermal and mechanical specifications parameter symbol test condit ions 54mt.k 94mt.k 104mt.k units maximum junction operating ? and storage temperature range t j , t stg -40 to 125 c maximum thermal resistance, ? junction to case r thjc dc operation per single ac switch 0.52 0.39 0.34 k/w dc operation per junction 1.05 0.77 0.69 180 c sine cond. an gle per single ac switch 0.56 0.40 0.36 180 c sine cond. angle per junction 1.12 0.80 0.72 maximum thermal resistance, ? case to heatsink r thcs per module ? mounting surface smooth, flat and grased 0.03 mounting ? torque 100 % to heatsink a mounting compo und is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the ? compound. lubricated threads. 4 to 6 nm to terminal 3 to 4 approximate weight 225 g ? r conduction per junction devices sinusoidal conduction at t j maximum rectangular conduction at t j maximum units 180 120 90 60 30 180 120 90 60 30 54mt.k 0.072 0.085 0.108 0.152 0.233 0.055 0.091 0.117 0.157 0.236 k/w 94mt.k 0.033 0.039 0.051 0.069 0.099 0.027 0.044 0.055 0.071 0.100 104mt.k 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082
54-94-104mt..kpbf series www.vishay.com vishay semiconductors revision: 14-jan-14 4 document number: 94351 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ratings characteristic fig. 2 - forward voltage drop characteristics fig. 3 - total power loss characteristics fig. 4 - maximum non-re petitive surge current fig. 5 - maximum non-re petitive surge current 90 80 70 60 110 100 120 130 maximum allowable case temperature (c) rms output current (a) 10 20 50 60 30 40 0 54mt..k series device fully turned-on per single ac switch for all conduction angles i rms ~ 1 10 100 1000 instantaneous on-state current (a) instantaneous on-state voltage (v) 1 5 6 234 0 t j = 25 c t j = 125 c 54mt..k series per junction 50 0 250 200 350 300 150 100 maximum total power loss (w) (per total module) rms output current (a) 10 20 60 30 40 50 0 180 120 90 60 30 54mt..k series t j = 125 c device fully turned-on conduction angle ? ? 0 50 350 300 250 200 150 100 maximum total power loss (w) (per total module) maximum allowable ambient temperature (c) 100 125 25 50 75 0 0.1 k/w 0.2 k/w 0.3 k/w 0.5 k/w 0.7 k/w 1.0 k/w 2.0 k/w r thsa = 0.05 k/w - r 325 350 300 275 250 225 200 175 150 peak half sine wave on-state current (a) number of equal amplitude half cycle current pulses (n) 10 100 1 at 60 hz 0.0083 s at 50 hz 0.0100 s at any rated load condition and with rated v rrm applied following surge. 54mt..k series per junction initial t j = 125 c 350 300 250 200 150 400 peak half sine wave on-state current (a) pulse train duration (s) 0.1 1 0.01 maximum non-repetitive surge current versus pulse train duration. control of conduction may not be maintained. 54mt..k series per junction no voltage reapplied rated v rrm reapplied initial t j = 125 c
54-94-104mt..kpbf series www.vishay.com vishay semiconductors revision: 14-jan-14 5 document number: 94351 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 6 - current ratings characteristic fig. 7 - forward voltage drop characteristics fig. 8 - total power loss characteristics fig. 9 - maximum non-re petitive surge current fig. 10 - maximum non- repetitive surge current 90 80 70 60 50 100 110 120 130 maximum allowable case temperature (c) rms output current (a) 20 40 60 80 120 100 0 94mt..k series device fully turned-on per single ac switch for all conduction angles i rms ~ 1 10 100 1000 instantaneous on-state current (a) instantaneous on-state voltage (v) 12 4 5 3 0 t j = 25 c 94mt..k series per junction t j = 125 c 50 450 350 400 300 250 150 200 100 0 maximum total power loss (w) (per total module) rms output current (a) 30 10 20 40 50 90 100 60 70 80 0 180 120 90 60 30 94mt..k series t j = 125 c device fully turned-on conduction angle ? ? 0 50 350 400 450 300 250 200 150 100 maximum total power loss (w) (per total module) maximum allowable ambient temperature (c) 75 100 125 50 25 0 0.05 k/w 0.15 k/w 0.3 k/w 0.5 k/w 0.7 k/w 1.0 k/w 1.5 k/w r thsa = 0.03 k/w - r 700 750 650 600 550 500 450 400 350 peak half sine wave on-state current (a) number of equal amplitude half cycle current pulses (n) 10 100 1 94mt..k series per junction at any rated load condition and with rated v rrm applied following surge. initial t j = 125 c at 60 hz 0.0083 s at 50 hz 0.0100 s 900 800 700 600 500 400 300 1000 peak half sine wave on-state current (a) pulse train duration (s) 0.01 0.1 1 maximum non-repetitive surge current versus pulse train duration. control of conduction may not be maintained. 94mt..k series per junction initial t j = 125 c no voltage reapplied rated v rrm reapplied
54-94-104mt..kpbf series www.vishay.com vishay semiconductors revision: 14-jan-14 6 document number: 94351 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - current ratings characteristic fig. 12 - forward voltage drop characteristics fig. 13 - total powe r loss characteristics fig. 14 - maximum non-repetitive surge current fig. 15 - maximu m non-repetitive surge current 90 80 70 60 120 130 100 110 maximum allowable case temperature (c) rms output current (a) 20 40 100 120 60 80 0 104mt..k series device fully turned-on per single ac switch for all conduction angles i rms ~ 1 100 10 1000 instantaneous on-state current (a) instantaneous on-state voltage (v) 1234 5 0 t j = 25 c 104mt..k series per junction t j = 125 c 0 350 400 450 500 300 250 200 150 100 50 maximum total power loss (w) (per total module) rms output current (a) 20 40 60 80 100 120 0 180 120 90 60 30 104mt..k series t j = 125 c device fully turned-on conduction angle ? ? 50 0 450 500 400 350 300 250 200 150 100 maximum total power loss (w) (per total module) maximum allowable ambient temperature (c) 100 125 25 50 75 0 0.05 k/w 0.15 k/w 0.5 k/w 0.7 k/w 1.0 k/w 1.5 k/w r thsa = 0.03 k/ w - r 0.3 k/w 900 800 700 600 500 400 1100 1000 peak half sine wave on-state current (a) number of equal amplitude half cycle current pulses (n) 10 100 1 104mt..k series per junction at 60 hz 0.0083 s at 50 hz 0.0100 s at any rated load condition and with rated v rrm applied following surge. initial t j = 125 c 900 800 700 600 500 400 1200 1100 1000 peak half sine wave on-state current (a) pulse train duration (s) 0.1 1 0.01 maximum non-repetitive surge current versus pulse train duration. control of conduction may not be maintained. initial t j = 125 c no voltage reapplied rated v rrm reapplied 104mt..k series per junction
54-94-104mt..kpbf series www.vishay.com vishay semiconductors revision: 14-jan-14 7 document number: 94351 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 16 - thermal impedance z thjc characteristics fig. 17 - gate characteristics ordering information table note ? to order the optional hardware go to www.vishay.com/doc?95172 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) 10 per junction 104mt..k series 94mt..k series 54mt..k series steady state value r thjc = 1.05 k/w r thjc = 0.77 k/w r thjc = 0.69 k/w (dc operation) 0.1 1 100 10 0.001 0.01 0.1 1 instantaneous gate current (a) instantaneous gate voltage (v) 1000 100 10 (b) (a) (4) (3) (2) (1) (1) pgm = 100 w, tp = 500 s (2) pgm = 50 w, tp = 1 ms (3) pgm = 20 w, tp = 25 ms (4) pgm = 10 w, tp = 5 ms t j = -40 c t j = 25 c t j = 125 c vgd igd frequency limited by pg(av) 54/ 94/ 104mt..k series rectangular gate pulse a) recommended load line for rated di/dt: 20 v, 30 t r = 0.5 s, t p 6 s b) recommended load line for 30 % rated di/dt: 20 v, 65 t r = 1 s, t p 6 s device code 1 - current rating code: 5 = 50 a (average) 9 = 90 a (average) 10 = 100 a (average) 2 - ac switch 3 - essential part number 4 - voltage code x 10 = v rrm (see voltage ratings table) 5 - pbf = lead (pb)-free 5 13 2 10 4 mt 160 k pbf 4
54-94-104mt..kpbf series www.vishay.com vishay semiconductors revision: 14-jan-14 8 document number: 94351 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 circuit configuration 1 2 3 4 5 6 ab c f e d links to related documents dimensions www.vishay.com/doc?95004
document number: 95004 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 27-aug-07 1 mtk (with and without optional barrier) outline dimensions vishay semiconductors dimensions with optional barriers in millimeters (inches) 24 0.5 (0.94 0.02) 38 0.5 (1.5 0.02) 30 0.5 (1.17 0.02) 35 0.3 (1.38 0.01) 8.5 0.5 (0.34 0.02) fast-on tab 2.8 x 0.8 (type 110) screws m5 x 0.8 length 10 28 1 (1.11 0.04) 25.5 0.5 (1.004 0.02) 5 0.3 (0.2 0.01) 75 0.5 (2.95 0.02) 46 0.3 (1.81 0.01) 80 0.3 (3.15 0.01) 94 0.3 (3.7 0.01) ? 6.5 0.2 (? 0.26 0.01) 14 0.3 (0.55 0.01) 18 0.3 (0.71 0.01) 1 2 3 4 5 6 7 8 a b c f e d
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 95004 2 revision: 27-aug-07 outline dimensions vishay semiconductors mtk (with and withou t optional barrier) dimensions without optional barriers in millimeters (inches) 24 0.5 (0.94 0.02) 30 0.5 (1.17 0.02) 35 0.3 (1.38 0.01) 8.5 0.5 (0.34 0.02) fast-on tab 2.8 x 0.8 (type 110) screws m5 x 0.8 length 10 28 1 (1.11 0.04) 25.5 0.5 (1.004 0.02) 5 0.3 (0.2 0.01) 75 0.5 (2.95 0.02) 46 0.3 (1.81 0.01) 80 0.3 (3.15 0.01) 94 0.3 (3.7 0.01) ? 6.5 0.2 (? 0.26 0.01) 14 0.3 (0.55 0.01) 18 0.3 (0.71 0.01) 1 2 3 4 5 6 7 8 a b c f e d
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