nc. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (201 ) 376-292 2 (212)227-600 5 fax : (201 ) 376-896 0 2n/pn356 7 ? 2n/pn356 8 ? 2n/pn356 9 np n smal l signa l genera l purpos e amplifier s diffuse d silico n planar * epitaxia l transistor s absolut e maximu m rating s (not e 1 ) maximu m temperature s 2N3567/8/ 9 storag e temperatur e -55 c to o +125 c operatin g junctio n temperatur e 125 c lea d temperatur e (1 0 seconds ) 260 c maximu m powe r dissipatio n (note s 2 & 3 ) tota l dissipatio n a t 25" c cas e temperatur e 0. 8 w a t 25 c ambien t temperatur e 0. 3 w maximu m voltage s an d current s 2n/pn356 8 veb o emitte r t o bas e voltag e 5. 0 v vcb o collecto r t o bas e voltag e 8 0 v collecto r t o emitte r voltag e (note s 4 & 6 ) 60 v collecto r curren t 50 0 m a bas e curren t 100m a pn3567/8/ 9 -55 c to+150 c 150 c 260 c lo w 0.62 5 w 2n/pn3567/ 9 5.0 v 80 v 40 v 500m a 100m a electrica l characteristic s (25 c ambien t temperatur e unles s otherwis e noted ) symbo l icb o ?eb o bvcb o bv e b o bvce o hf e v be(on ) v ce(sat ) cc b ?c e b |hfe l characteristi c collecto r cutof f curren t emitte r cutof f curren t collecto r t o bas e breakdow n voltag e emitte r t o bas e breakdow n voltag e collecto r t o emitte r breakdow n voltag e (not e 5 ) d c curren t gai n (not e 5 ) bas e t o emitte r "on " voltag e (not e 5 ) collecto r t o emitte r saturatio n voltag e (not e 5 ) collecto r t o bas e capacitanc e emitte r t o bas e capacitanc e magnitud e o f commo n emitte r smal l signa l curren t gai n 2n/pn356 7 min . ma x 5 0 5. 0 2 5 8 0 5. 0 4 0 4 0 12 0 4 0 1. 1 0.2 5 2 0 8 0 3. 0 3 0 2n/pn356 8 min . ma x 5 0 5. 0 2 5 8 0 5. 0 6 0 4 0 12 0 4 0 1. 1 0.2 5 2 0 8 0 3. 0 3 0 2n/pn356 9 min . ma x 5 0 5. 0 2 5 8 0 5. 0 4 0 10 0 30 0 10 0 1. 1 0.2 5 2 0 8 0 3. 0 3 0 unit s n a m a n a v v v v v p f p f test condition s v cb =40v , i e = 0 vc b = 4 v . ' e = . t a " 75 c v e b = 4. o v , i c = q i e =o , ig = 10 0 m a ' i c = o , i e - 1 0 m a i b ? 0 , i c " 30m a v c e ? 1.0v , i c = 150m a v c e = 1. 0 v , l c = 30m a v c e ? 1- v . ' c = 150m a 1 c - 150ma , i b - 1 5 m a i e ? 0 , vc b - 1 0 v , f - 140kh z i c = 0 , v e b - 0, 5 v , f - 14 0 kh z vc e " 10v , l c = 50m a f - 2 0 mh z notes : 1 . thes e rating s ar e limitin g value s abov e whic h th e serviceabilit y o f an y individua l semiconducto r devic e ma y b e impaired . 2 . thes e ar e stead y stat e limits . th e factor y shoul d b e consulte d o n application s involvin g pulse d o r lo w dut y cycl e operations . 3 . thes e rating s giv e a maximu m junctio n temperatur e o f 12 5 c an d junctio n t o cas e therma l resistanc e o f 12 5 c/ w (deratin g facto r o f 8. 0 mw/c) ; junctio n t o ambien t therma l resistanc e o f 333c/ w (deratin g facto r o f 3. 0 mw / ^c ) fo r 2N3567 , 2n3s68 , an d 2n3569 . thes e rating s giv e a maxi - mu m junctio n temperatur e o f 150 j c/ w an d junctio n t o cas e therma l resistanc e o f 125 j c/ w (deratin g facto r o f 8. 0 mw / c) ; junctio n t o ambien t therma l resistanc e o f 200c/ w (deratin g facto r o f 5. 0 mw/c ) fo r pn3567 , pn3568 , an d pn3569 . 4 . thi s ratin g refer s t o a hig h curren t poin t wher e collecto r t o emitte r voltag e i s lowest . 5 . puls e conditions : lengt h = 30 0 ms ; dut y cycl e = 1% . 6 . applicabl e 0 t o 3 0 ma . downloaded from: http:///
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