t-1 3/4 package npn phototransisor MID-52A22 description package dimensions the MID-52A22 is a npn silicon phototransistor mounted in a lensed, special dark plastic package. the lensing effect of the package allows an acceptance view angle of 20 o so that the product performs a high directional characteristic. features l wide range of collector current l lensed for high sensitivity l low cost plastic package l standard t-1 3/4 (5mm) package. l good spectral matching ired (940nm) type. l acceptance angle :20 o absolute maximum ratings @ t a =25 o c parameter maximum rating unit power dissipation 150 mw collector-emitter voltage 30 v emitter-collector voltage 5 v operating temperature range storage temperature range lead soldering temperature 02/04/2002 -55 o c to +100 o c -55 o c to +100 o c 260 o c for 5 seconds unity opto technology co., ltd. unit : mm (inches ) notes : 1.tolerance is 0.25 mm (.010") unless otherwise noted. 2.protruded resin under flange is 1.0 mm (.040") max. 3.lead spacing is measured where the leads emerge from the package. r 5.05 (.200) 2.54 (.100) 7.62 (.300) 1.00 (.040) 0.50typ. (.020) 1.00min. (.040) flat denotes collector 5.47 (.215) 5.90 (.230) 23.40min. (.920) c e
MID-52A22 optical-electrical characteristics @ t a =25 o c parameter test conditions symbol min. typ . max. unit collector-emitter i c =0.1ma breakdown voltage ee=0 emitter-collector ie=0.1ma breakdown voltage ee=0 collector-emitter i c =0.5ma saturation voltage ee=0.1mw/cm 2 rise time v cc =5v , r l =1k w tr 15 fall time i c =1ma tf 15 collector dark v ce =10v current ee=0 on state collector v ce =5v current ee=0.1mw/cm 2 typical optical-electrical characteristic curves 02/04/2002 i c(on) 0.8 ma v ce(sat) na 100 i ceo m s v v v 0.4 v (br)ceo v (br)eco 30 5 unity opto technology co., ltd. t a - ambient temperature - o c fig.2 normalized collector current vs ambient temperature ee - irradiance - mw/cm 2 fig.4 relative collector current vs irradiance 0.001 0.01 0.1 1 10 100 1000 0 40 80 120 t a - ambient temperature - o c fig.1 collector dark current vs ambient temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -75 -25 25 75 125 0 40 80 120 160 200 0 2 4 6 8 10 r l - load resistance - k w fig.3 rise and fall time vs load resistance 0 1 2 3 4 5 0 0.1 0.2 0.3 0.4 0.5 0.6 vce = 5 v relative collector current (ma) i c normalized collector current vcc = 5 v v rl = 1 v f = 100 hz pw = 1 ms tr tf rise and fall time - m s iceo-collector dark current - m a fig .5 sensitivity diagram 1.0 0.9 0.8 0 10 20 0.5 0.3 0.1 0.2 0.4 0.6 relative sensitivity vce = 5 v ee = 0.1 mw/cm 2 @ l = 940 nm 40 90 70 60 50 80 30
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