, dna. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s a n-channe l jfet s 2n4338/4339/4340/434 1 telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 produc t summar y par t numbe r 2n433 8 2n433 9 2n434 0 2n434 1 v g s(off ) (v ) -0. 3 t o - 1 -0.6to-1. 8 - 1 t o - 3 - 2 t o - 6 v( b r)gs s wi n (v ) -5 0 -5 0 -5 0 -5 0 g f s mi n (ms ) 0. 6 0. 8 1. 3 2 ids s ma x (ma ) 0. 6 1. 5 3. 6 9 feature s ? lo w cutof f voltage : 2n433 8 < 1 v ? hig h inpu t impedanc e ? ver y lo w nois e ? hig h gain : a v = 8 0 @ 2 0 \ia benefit s ? ful l performanc e fro m low-voltag e powe r supply : dow n t o 1 v ? lo w signa l loss/syste m erro r ? hig h syste m sensitivit y ? high-qualit y low-leve l signa l amplificatio n application s ? high-gain , low-nois e amplifier s ? low-current , low-voltag e battery-powere d amplifier s ? infrare d detecto r amplifier s ? ultrahig h inpu t impedanc e pre-amplifier s descriptio n th e 2n4338/4339/4340/434 1 n-channe l jfet s ar e designe d fo r sensitiv e amplifie r stage s a t low - t o mid-frequencies . lo w cut-of f voltage s accommodat e low-leve l powe r supplie s an d lo w leakag e fo r improve d syste m accuracy . th e to-206a a (to-18 ) packag e i s hermeticall y seale d an d suitabl e fo r militar y processin g (se e militar y information) . fo r simila r product s i n to-226a a (to-92 ) an d to-23 6 (sot-23 ) packages , se e th e j/sst20 1 serie s dat a sheet . (to-18 ) to p vie w g an d cas e absolut e maximu m rating s gate-source/gate-drai n voltag e -5 0 v forwar d gat e curren t 5 0 m a storag e temperatur e -6 5 t o 200 c operatin g junctio n temperatur e -5 5 t o 175" c lea d temperatur e (vie " fro m cas e fo r 1 0 sec. ) powe r dissipation 3 . . 300 c 30 0 m w note s a . derat e 2 mw/ c abov e 25c qualit y semi-conductor s downloaded from: http:///
^.m.i-c,oncljlctoi i., una. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . n-channe l jfet s 2n4338/4339/4340/434 1 telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 produc t summar y par t numbe r 2n433 8 2n433 9 2n434 0 2n434 1 v gs (off ) (v ) -0. 3 t o - 1 -0. 6 t o -1. 8 - 1 t o - 3 - 2 t o - 6 v, b r)gs s wi n (v ) -5 0 -5 0 -5 0 -5 0 gt s wi n (ms ) 0. 6 0. 8 1. 3 2 los s ma x (ma ) 0. 6 1. 5 3. 6 9 feature s ? lo w cutof f voltage : 2n433 8 < 1 v ? hig h inpu t impedanc e ? ver y lo w nois e ? hig h gain : a v = 8 0 @ 2 0 n a benefit s ? ful l performanc e fro m low-voltag e powe r supply : dow n t o 1 v ? lo w signa l loss/syste m erro r ? hig h syste m sensitivit y ? high-qualit y low-leve l signa l amplificatio n application s ? high-gain , low-nois e amplifier s ? low-current , low-voltag e battery-powere d amplifier s ? infrare d detecto r amplifier s ? ultrahig h inpu t impedanc e pre-amplifier s descriptio n th e 2n4338/4339/4340/434 1 n-channe l jfet s ar e designe d fo r sensitiv e amplifie r stage s a t low - t o mid-frequencies . lo w cut-of f voltage s accommodat e low-leve l powe r supplie s an d lo w leakag e fo r improve d syste m accuracy . th e to-206a a (to-18 ) packag e i s hermeticall y seale d an d suitabl e fo r militar y processin g (se e militar y information) . fo r simila r product s i n to-226a a (to-92 ) an d to-23 6 (sot-23 ) packages , se e th e j/sst20 1 serie s dat a sheet . (to-18 ) absolut e maximu m rating s gate-source/gate-drai n voltag e forwar d gat e curren t storag e temperatur e operatin g junctio n temperature . -5 0 v 5 0 m a . -65to200 c . -5 5 t o 175 c qualit y semi-conductor s lea d temperatur e ( 1 / 16 " fro m cas e fo r 1 0 sec. ) powe r dissipation 3 . . 300 c 30 0 m w note s a . derat e 2 mw/ c abov e 25 c downloaded from: http:///
^e.m.l-don.auato'l lpioaucti, line. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212 ) 227-600 5 fax : (973 ) 376-896 0 specification s fo r 2n433 8 an d 2n433 9 (t a = 25 c unles s otherwis e noted ) paramete r symbo l tes t condition s typ a limit s 2n433 8 mi n ma x 2n433 9 mi n ma x uni t stati c gate-sourc e breakdow n voltag e gate-sourc e cutof f voltag e saturatio n drai n current 1 1 gat e revers e curren t gat e operatin g current 1 5 drai n cutof f curren t gate-sourc e forwar d voltage 0 v (br)gs s vgs(otf ) los s igs s i g b(off ) vos(f ) i g = - 1 m a , v d s = o v v ds =1 5 v , i d = 0. 1 m a v d s = 1 5 v,v g s = o v v g s = -30v,v d s = o v | t a =150 c v d g = 15v , i d = 0. 1 m a v d s =1 5 v,v e s = -5 v i g = 1 m a , vd s = 0 v -5 7 - 2 - 4 - 2 2 0. 7 -5 0 -0. 3 0. 2 -" 1 0. 6 -10 0 -10 0 5 0 -5 0 -0. 6 0. 5 -1. 8 1. 5 -10 0 -10 0 5 0 v m a p a n a p a v dynami c common-sourc e forwar d transconductanc e common-sourc e outpu t conductanc e drain-sourc e on-resistanc e common-sourc e inpu t capacitanc e common-sourc e revers e transfe r capacitanc e equivalen t inpu t nois e voltage 0 nois e figur e 9f c 9o s r ds(on ) c| s s c re s s n n f vq s ~ 1 5 v vg s ~ 0 v f - 1 kh z v d s = ov,v q s = ov,f= 1 kh z v d s = 10v,v g s = ov,f= 1 kh z v d s = 1 5 v,v g s = o v f = 1 khz , r g = 1 m b 5 1. 5 6 0. 6 1. 8 5 250 0 7 3 1 0. 8 2. 4 1 5 170 0 7 3 1 m s li s q p f nv / vh z d b specification s fo r 2n434 0 an d 2n434 1 (t a = paramete r symbo l 25 c unles s otherwis e noted ) tes t condition s t ? limit s 2n434 0 mi n ma x 2n434 1 mi n ma x uni t stati c gate-sourc e breakdow n voltag e gate-sourc e cutof f voltag e saturatio n drai n current b gat e revers e curren t gat e operatin g current b drai n cutof f curren t gate-sourc e forwar d voltag e v (br)gs s v gs(off ) los s igs s i g i d(0 , v gs(f ) i g = -1ma,v d s = o v vd s =1 5 v,i d = 0. 1 m a v ds = 1 5 v , v gs =o v vq s = -3 0 v . vd s = 0 v i t a = 150 c v dg = 15v , i d = 0. 1 m a vd s = 1 5 v i g = 1 m a , vd s v g s = - 5 v v g s = -1 0 v = o v -5 7 - 2 -4 -2 2 3 0. 7 -5 0 - 1 1. 2 - 3 3. 6 -10 0 -10 0 5 0 -5 0 - 2 3 - 6 9 -10 0 -10 0 7 0 v m a p a n a p a v qualit y semi-conductor s downloaded from: http:///
2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212 ) 227-600 5 fax : (973 ) 376-896 0 specification s fo r 2n434 0 an d 2n434 1 (t a = paramete r symbo l 25 c unles s otherwis e noted ) tes t condition s typ a limit s 2n434 0 ml n ma x 2n434 1 mi n ma x uni t stati c gate-sourc e breakdow n voltag e gate-sourc e cutof f voltag e saturatio n drai n current 1 1 gat e revers e curren t gat e operatin g current 1 " drai n cutof f curren t gate-sourc e forwar d voltag e v(br)gs s v gs(otf ) toss igs s i g tofofi) v gs(f ) i g = - 1 m a , v d s = o v v d s = 1 5 v , i d = 0. 1 (i a v ds =1 5 v,v g s = o v v g s = -30v,v d _j s = o v t a =150- 0 v d g = 15v , i d = 0. 1 m a v d 8 = 15 v i g = 1 m a , vd s v g s = - 5 v v g s = -10 v = o v -5 7 - 2 - 4 - 2 2 3 0, 7 -s o - 1 1. 2 - 3 3. 6 -10 0 -10 0 5 0 -s o - 2 3 - 6 9 -10 0 -10 0 7 0 v m a p a n a p a v specification s fo r 2n434 0 an d 2n434 1 (t a = 2 5 c unles s otherwis e noted ) paramete r dynami c common-sourc e forwar d transconductanc e common-sourc e outpu t conductanc e drain-sourc e on-resistanc e common-sourc e inpu t capacitanc e common-sourc e revers e transfe r capacitanc e equivalen t inpu t nois e voltage 1 nois e figur e symbo l tes t condition s typ a limit s 2n434 0 mi n ma x 2n434 1 mi n ma x uni t 9f s 9o s r ds(on ) c| s s c ra s 5 n n f v os =1 5 v,v g s = ov,f= 1 kh z v d s = ov,v g s = ov,f= 1 kh z v d s = 1 5 v,v g s = ov,f=1mh z v ds =10v,v g s = ov , f= 1 kh z v d s = 1 5 v,v g s = o v f = 1 khz , r g = 1 mq 5 1. 5 6 1. 3 3 3 0 150 0 7 3 1 2 4 6 0 80 0 7 3 1 m s u s q p f nv / vh z d b note s a . typica l value s ar e fo r desig n ai d only , no t guarantee d no r subjec t t o productio n testing . b . puls e test : p w 30 0 (is , dut y cycl e 3%. c . thi s paramete r no t registere d wit h jedec . seatin g plan e .o f -* ? dim . qualit y semi-conductor s downloaded from: http:///
, u na. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212 ) 227-600 5 fax : (973 ) 376-896 0 specification s fo r 2n434 o an d 2n434 1 (t a = 2 5 c unles s otherwis e noted ) paramete r symbo l tes t condition s typ a limit s 2n434 0 mi n ma x 2n434 1 mi n ma x uni t dynami c common-sourc e forwar d transconductanc e common-sourc e outpu t conductanc e drain-sourc e on-resistanc e common-sourc e inpu t capacitanc e common-sourc e revers e transfe r capacitanc e equivalen t inpu t nois e voltage c nois e figur e 9 b 9o s fds(on ) qs s c rss e n n f vd s ~ 1 5 v vg s - 0 v f = 1 kh z v d s = ov.vg s = ov,f= 1 kh z v ds = 1 5 v , vg s = o v , f = 1 mh z v ds =10v,v g s = ov,f= 1 kh z v d s = 1 5 v , v g s = o v f = 1 khz , r g = 1 m u 5 1. 5 6 1. 3 3 3 0 150 0 7 3 1 2 4 6 0 80 0 7 3 1 m s u s u p f nv / vh z d b note s a . typica l value s ar e fo r desig n ai d only , no t guarantee d no r subjec t t o productio n testing . b . puls e test : p w < 30 0 [is , dut y cycl e < 3% . c . thi s paramete r no t registere d wit h jedec . np a typica l characteristic s (t a = 2 5 c unles s otherwis e noted ) 1 0 h i bs s - saturatio n drai n curren t (m a o r o * . o > c drai n curren t an d transconductanc e vs . gate-sourc e cutof f voltag e loss ? 9fs@\ f = 1 k h / x v d s = d s = z / / ? x ^ 10 v 10v , j x v e s ^g s = ^ ^ ^ / = o v o v ^ / & id s j> ' * / ? ^ ^ 0- 1 - 2 - 3 - 4 - vosioff ) - gate-sourc e cutof f voltag e (v ) mmm ? i 111 1 o t - o o t - r - c i (v ) a6e>|ea i aie g - 9 | gt s - forwar d transconductanc e (ms ) i o f c o ( n t - o gat e leakag e curren t = t n = e l t a lb.-' " ' ' = 12 & = 25 ' ^ ? d c . ,x - ^ ^ ^f c ^m m 3 l c ^ 10 0 / ^ iss @ ^ m a ^^ m ?^w " ^^ ? 125 50 0 r r ^ 50 0 ?^ ^ ? ' ^? " c / / ^ " ig s m a x 1 ^? m / / / d=1 c h ; ^ j / om a h 5 c s - ^ - e - = h^mb i e - 3 6 1 2 1 8 2 4 3 0 vd g - drain-gat e voltag e (v ) qualit y semi-conductor s downloaded from: http:///
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