inchange semiconductor product specification silicon npn power transistors MJF18006 description ? ? with to-220f package ? high voltage ,high speed applications ? designed for use in 220v line-operated switchmode power supplies and electronic light ballasts pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1000 v v ceo collector-emitter voltage open base 450 v v ebo emitter-base voltage open collector 9 v i c collector current (dc) 6 a i cm collector current-peak 15 a i b base current 4 a i bm base current-peak 8 a p d total power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 3.12 ??/w r th j-a thermal resistance junction to ambient 62.5 ??/w fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon npn power transistors MJF18006 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a; l=25mh 450 v v cesat-1 collector-emitter saturation voltage i c =1.5a ;i b =0.15a t c =125 ?? 0.6 0.65 v v cesat-2 collector-emitter saturation voltage i c =3a ;i b =0.6a t c =125 ?? 0.7 0.8 v v besat-1 base-emitter saturation voltage i c =1.5a; i b =0.15a 1.2 v v besat-2 base-emitter saturation voltage i c =3a; i b =0.6a 1.3 v 0.1 v ces =ratedv ces; v eb =0 0.5 i ces collector cut-off current v ces =800v t c =125 ?? 0.1 ma i ceo collector cut-off current v ce =ratedv ceo ; i b =0 0.1 ma i ebo emitter cut-off current v eb =9v; i c =0 0.1 ma h fe-1 dc current gain i c =0.5a ; v ce =5v 14 34 h fe-2 dc current gain i c =3a ; v ce =1v 6 h fe-3 dc current gain i c =1.5a ; v ce =1v 11 h fe-4 dc current gain i c =10ma ; v ce =5v 10 f t transition frequency i c =0.5a ; v ce =10v;f=1.0mhz 14 mhz c ob collector outoput capacitance i e =0 ; v cb =10v;f=1.0mhz 75 pf switching times resistive load,duty cycle ? 10%,pulse width=20 | s t on turn-on time 90 180 ns t off turn-off time v cc =300v ,i c =3a i b1 =0.6a; i b2 =1.5a 1.7 2.5 | s t on turn-on time 0.2 0.3 | s t off turn-off time v cc =300v ,i c =1.3a i b1 =0.13a; i b2 =0.65a 1.2 2.5 | s
inchange semiconductor product specification 3 silicon npn power transistors MJF18006 package outline fig.2 outline dimensions
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