j \s , one, 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . silico n pn p powe r transisto r telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 2sa75 7 descriptio n ? hig h powe r dissipation - : p c = 60w(max.)@t c =25 c ? collector-emitte r breakdow n voltage - : v (b r)ceo = -90v(min. ) application s ? designe d fo r us e i n audi o amplifie r powe r outpu t stag e an d genera l purpos e applications . pi n 1 bas e 2 . emitte r 3 . collec t o r (case ) to- 3 packag e absolut e maximu m ratings(t a =25'c ) symbo l vcb o vce o veb o i c ic m p c t j tst g paramete r collector-bas e voltag e collector-emitte r voltag e emitter-bas e voltag e collecto r current-continuou s collecto r current-pea k collecto r powe r dissipatio n @t c =25' c junctio n temperatur e storag e temperatur e valu e -12 0 -9 0 - 5 - 7 -1 2 6 0 15 0 -55-15 0 uni t v vv a a w r ? c - j 1 1 1 c f- e 1 t -wu- d h u ? > v _ [* . l * \c " i - \\l u k / ' ^ ^ / j ^ &-}?{ ? c t v di m a b c d e 1 5 h k l n g u v r^ / 1 1 ^ nu n m m ma x 39.0 0 25.3 0 7.8 0 o.s o 1.4 0 26.6 ? 8.5 0 1.1 0 1.6 0 10,9 2 54 $ 11.10 167 5 19.4 0 40 0 30.0 0 4.3 0 13.5 0 170 5 196 2 42 0 302 0 45 0 t b i n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d puckat- e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o h e hot h accurat e an d reliabl e a t th e tim e o f goin g t o press . i hmever . n j semi-couduetor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . " n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e plaoin a orders . qualit y semi-conductor s downloaded from: http:///
silico n pn p powe r transisto r 2sa75 7 electrica l characteristic s tj=25' c unles s otherwis e specifie d symbo l v(br)ce o v(br)cbo v(br)eb o vce(sat ) vbe(on ) icb o hfe- 1 hfe- 2 f l paramete r collector-emitte r breakdow n voltag e collector-bas e breakdow n voltag e emitter-bas e breakdow n voltag e collector-emitte r saturatio n voltag e base-emitte r o n voltag e collecto r cutof f curren t d c curren t gai n d c curren t gai n current-gainbandwidt h produc t condition s l c = -50ma ; r be = l c = -5ma ; i e = 0 i e = -5ma ; l c = 0 lc = -5a ; i b = -1 a lc = -1a ; v ce = -5 v v cb =-120v ; i e = 0 | c = -1a ; vce - -5 v lc = -5a ; v ce = -5 v lc = -1a ; v ce = -5 v mi n -9 0 -12 0 - 5 2 5 2 0 typ . 2 4 ma x -1. 8 -1. 5 -1. 0 20 0 uni t v vv v v m a mh z hpe- 1 classification s a 25-6 0 b 50-12 0 c 100-20 0 downloaded from: http:///
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