bga616 silicon germanium broadband mmic amplifier data sheet, rev. 2.1, sept. 2011 rf & protection devices
edition 2011-09-02 published by infineon technologies ag, 81726 mnchen, germany ? infineon technologies ag 2011. all rights reserved. attention please! the information herein is given to describe certain co mponents and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology , delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain da ngerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safe ty or effectiveness of that device or system. life support devices or systems are intended to be implanted in the hu man body, or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
bga616 data sheet 3 rev. 2.1, 2011-09-02 trademarks sieget ? is a registered trademark of infineon technologies ag. bga616, silicon germanium broadband mmic amplifier revision history: 2011-09-02, rev. 2.1 previous version: 2003-04-16 page subjects (major cha nges since last revision) all new chip version with integrated esd protection 5 electrical characteri stics slightly changed 7-8 figures updated all document layout change
data sheet 4 rev. 2.1, 2011-09-02 bga616 silicon germanium broadband mmic amplifier 1 silicon germanium broa dband mmic amplifier figure 1 pin connection description the bga616 is a broadband matched gener al purpose mmic amplifier in a darli ngton configuration. it is optimized for a typical supply current of 60 ma. the bga616 is based on infi neon technologies? b7hf s ilicon germanium technology. note: esd: electrostatic discharge sensitive device, observe handling precaution feature ? cascadable 50 -gain block ? 3 db-bandwidth: dc to 2.7 ghz with 19.0 db typical gain at 1.0 ghz ? compression point p -1db = 18 dbm at 2.0 ghz ? noise figure f 50 = 2.60 db at 2.0 ghz ? absolute stable ?70ghz f t - silicon germanium technology ? 1 kv hbm esd protection (pin-to-pin) ? pb-free (rohs compliant) package applications ? driver amplifier for gsm/pcs/scdma/umts ? broadband amplifier for sat-tv & lnbs ? broadband amplifier for catv sot343 type package marking bga616 sot343 bps 1 2 3 4 gnd, 2,4 in, 1 out, 3
bga616 electrical characteristics data sheet 5 rev. 2.1, 2011-09-02 maximum ratings note: all voltages refer to gnd-node thermal resistance 2 electrical characteristics electrical characteristics at t a = 25 c (measured in test circuit specified in figure 2 ) v cc = 6 v, r bias = 33 , frequency = 2 ghz, unless otherwise specified table 1 maximum ratings parameter symbol limit value unit device voltage v d 4.5 v device current i d 80 ma current into pin in i in 0.7 ma input power 1) 1) valid for z s = z l = 50 , v cc = 6 v, r bias = 33 p in 10 dbm total power dissipation, t s < 78 c 2) 2) t s is measured on the ground lead at the soldering point p tot 360 mw junction temperature t j 150 c ambient temperature range t a -65... 150 c storage temperature range t stg -65... 150 c esd capability all pins (hbm: jesd22-a114) v esd 1000 v table 2 thermal resistance parameter symbol value unit junction - soldering point 1) 1) for calculation of r thja please refer to application note thermal resistance r thjs 200 k/w table 3 electrical characteristics parameter symbol va lues unit note / test condition min. typ. max. insertion power gain |s 21 | 2 20.0 db f = 0.1 ghz 19.0 db f = 1 ghz 18.0 db f = 2 ghz noise figure ( z s = 50 ) f 50 2.2 db f = 0.1 ghz 2.5 db f = 1 ghz 2.6 db f = 2 ghz output power at 1 db gain compression p -1db 18 dbm output third order intercept point oip 3 29 dbm input return loss rl in 15 db output return loss rl out 15 db total device current i d 60 ma
data sheet 6 rev. 2.1, 2011-09-02 bga616 electrical characteristics figure 2 test circuit for electrical characteristics and s-parameter bga616_test_circuit.vsd reference plane top view in out in out gnd gnd bias-t bias-t reference plane r bias = 33 v d i d v cc = 6v caution: device voltage v d at pin out! v d = v cc - r bias i d
bga616 measured parameters data sheet 7 rev. 2.1, 2011-09-02 3 measured parameters power gain |s 21 | 2 , g ma = f(f) v cc = 6v, r bias = 33 , i c = 60ma 10 ?1 10 0 10 1 0 2 4 6 8 10 12 14 16 18 20 22 frequency [ghz] |s 21 | 2 , g ma [db] |s 21 | 2 g ma matching |s 11 |, |s 22 | = f(f) v cc = 6v, r bias = 33 , i c = 60ma 10 ?1 10 0 10 1 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 power gain |s 21 | = f(i d ) f = parameter in ghz 0 20 40 60 80 0 2 4 6 8 10 12 14 16 18 20 22 i d [ma] |s 21 | 2 1 2 3 4 6 8 output compression point p ?1db = f(i d ), f = 2ghz 0 20 40 60 80 0 2 4 6 8 10 12 14 16 18 20 i d [ma] p ?1db [dbm]
data sheet 8 rev. 2.1, 2011-09-02 bga616 measured parameters device current i d = f(v cc ) r bias = parameter in 0 2 4 6 8 0 10 20 30 40 50 60 70 80 v cc [v] i d [ma] 01633 47 68 100 150 device current i d = f(t a ) v cc = 6v, r bias = parameter in ?40 ?20 0 20 40 60 80 40 45 50 55 60 65 70 75 80 t a [c] i d [ma] 30 33 36 noise figure f = f(f) v cc = 6v, r bias = 33 , z s = 50 t a = parameter in c 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 3.5 4 frequency [ghz] f [db] ?20c +25c +80c
bga616 package information data sheet 9 rev. 2.1, 2011-09-02 4 package information figure 3 package outline sot343 figure 4 tape for sot343 1.25 0.1 0.1 max. 2.1 0.1 0.15 +0.1 -0.05 gps05605 0.3 +0.1 2 0.2 0.1 0.9 12 3 4 a +0.1 0.6 a m 0.2 1.3 -0.05 -0.05 0.15 0.1 m 4x 0.1 0.1 min. 0.2 4 2.15 8 2.3 1.1 pin 1
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