features 1 of 6 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . rf mems SGL0622Z 5mhz to 4000mhz low noise mmic amplifier sili con germanium the SGL0622Z is a low noise, high gain mmic lna designed for low power single-supply operation from 2.7v to 3.6v. its class-1c esd protection and high input overdrive capability en sures rugged performance, while its integrated active bias circuit maintains robust stable bias over tempera- ture and process beta variation. th e SGL0622Z is internally matched from 5mhz to 4000 mhz and requires only 4 to 5 external biasing components (dc blocks, bypass caps, inductive choke). the SGL0622Z is fabricated using highly repeatable silicon germanium technology and is housed in a cost-effective rohs/weee compliant qfn 2x2 minia- ture package. typical performance 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 100.0 600.0 1100.0 1600.0 2100.0 2600.0 3100.0 frequency (mhz) gain (db) 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 nf gain ? high gain=28db at 1575mhz ? low noise figure=1.5db at 1575mhz ? low power consumption, 10.5ma @ 3.3v ? battery operation:2.7v to 3.6v (active biased) ? fully integrated matching ? class-1c esd protection (>1000v hbm) ? high input overdrive capability, +18dbm applications ? high gain gps receivers ? i sm and wimax lnas ds140404 ? package: qfn, 2x2 SGL0622Z parameter specification unit condition min. typ. max. small signal gain 25.0 28.0 31.0 db 1.575ghz 23.0 db 2.44ghz 14.5 16.5 18.5 db 3.50ghz output power at 1db compression 3.3 5.3 dbm 1.575ghz 1.5 dbm 2.44ghz -1.4 dbm 3.50ghz input third order intercept point -16.0 -13.0 dbm 1.575ghz -12.0 dbm 2.44ghz -8.5 dbm 3.50ghz input return loss 12.0 14.0 db 1.575ghz 12.0 db 2.44ghz 10.0 db 3.50ghz output return loss 6.0 9.5 db 1.575ghz 14.0 db 2.44ghz 22.0 db 3.50ghz noise figure 1.5 1.9 db 1.575ghz 2.0 db 2.44ghz 2.8 db 3.50ghz reverse isolation -28.0 db 0.05ghz to 4.0ghz thermal resistance 150 c/w junction - lead device operating current 7.5 10.5 14.5 ma test conditions: v cc =3.3v, i d =10.5ma typ., iip 3 tone spacing=1mhz, p out per tone=-15dbm, t l =25c, z s =z l =50 ?
2 of 6 SGL0622Z ds140404 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . typical rf performance at key operating frequencies (with application circuit) absolute maximum ratings parameter rating unit device current (i d )30ma device voltage (v d )4v rf input power* (see note) -10 dbm junction temp (t j )+150c operating temp range (t l ) -40 to +85 c storage temp +150 c esd rating - human body model (hbm) class 1c moisture sensitivity level msl 1 *note: load condition1, zl=50 ? . load condition2, z l =10:1 vswr. operation of this device beyond any one of these limits may cause permanent damage. for reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also sa tisfy the following expression: i d v d <(t j -t l )/r th , j-l and t l =t lead parameter unit 100 mhz 200 mhz 450 mhz 850 mhz 1575 mhz 1950 mhz 2440 mhz 3550 mhz small signal gain, s21 db 34.6 34.9 34.4 32.8 28.5 26.1 23.0 17.0 input third order intercept point, iip3 dbm -13.0 -12.0 -8.5 output at 1db compression, p1db dbm 2.7 5.3 1.5 -1.4 input return loss db 15.1 20.0 12.6 16.0 14.3 12.8 12.0 10.0 output return loss db 9.2 12.2 11.8 10.4 9.5 12.1 14.0 22.0 reverse isolation db 38.8 39.8 38.7 39.9 35.6 34.8 32.0 29.0 noise figure, nf db 1.25 0.96 0.84 1.16 1.50 1.78 2.01 2.81 test conditions: v cc =3.3v i d =10.5ma typ. iip 3 tone spacing=1mhz, p out per tone=-15dbm t l =25c z s =z l =50 ?
3 of 6 SGL0622Z ds140404 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . noise figure versus frequency 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1.5 2.0 2.5 3.0 3.5 frequency (ghz) (db) 25c 85c iip 3 versus frequency -20.0 -18.0 -16.0 -14.0 -12.0 -10.0 -8.0 -6.0 1.5 2.0 2.5 3.0 3.5 frequency (ghz) iip 3 (dbm) 25c -40c 85c p 1db versus frequency -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 10.0 1.52.02.53.03.5 frequency (ghz) p 1db (dbm) 25c -40c 85c
4 of 6 SGL0622Z ds140404 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . im3 versus frequency -70.0 -65.0 -60.0 -55.0 -50.0 -45.0 -40.0 -35.0 1.5 2.0 2.5 3.0 3.5 frequency (ghz) im3 (dbc) 25c -40c 85c dciv over temperature 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 0.00.51.01.52.02.53.03.54.0 v d (v) i d (ma) 25c -40c 85c s21 versus frequency 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) (db) 25c -40c 85c s12 versus frequency -50.0 -40.0 -30.0 -20.0 -10.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) (db) 25c -40c 85c s22 versus frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) (db) 25c -40c 85c -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 ( d b ) frequency (ghz) s22 versus frequency 2 - 8 application circuit data, v cc = 3.3v, i d = 9ma
5 of 6 SGL0622Z ds140404 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . suggested pad layout nominal package dimensions dimensions in inches (millimeters) refer to drawing posted at www.rfmd.com for tolerances. part identification pin function description 1rf out/vd rf output and bias pin. bias should be supplied to this pin through an external rf choke. (see application cir- cuit) 2gnd connect to ground per application circuit drawing. 3, 5, 6, 7, 8 n/a not used 4rf in rf input pin. this pin requires the use of an external dc blocking capacitor as shown in the application schemat- ics. epad gnd exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for ther- mal and rf performance. vias should be located under the epad as shown in the recommended land pattern. package type: 2 x 2 qfn
6 of 6 SGL0622Z ds140404 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . application schematic evaluation board layout and bill of materials ordering information part number description SGL0622Z 7" reel with 3000 pieces SGL0622Zsq sample bag with 25 pieces SGL0622Zsr 7" reel with 100 pieces SGL0622Zpck1 100mhz to 3500mhz pcba with 5-piece sample bag rf out rf in vs 68nh 1200 pf 1uf 100pf 100pf SGL0622Z epad 2 41 100pf + y bill of materials c1 1x tajb105klrh rohm 1.0uf c2 1x mch185c122kk rohm 1200pf c3 1x mch185a101jk rohm 100pf c4 1x mch185a101jk rohm 100pf c5 1x mch185a101jk rohm 100pf l1 1x ll1608-fs56nj toko 68nh connectors 2x psf-s01-1mm gigalane co. heat sink eef-102059 pcb qfn2x2
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